A survey of encryption standards

The author reviews encryption algorithms and standards, how they compare, how they differ, and where they are headed. Attention is given to secret-key cryptosystems, public-key cryptosystems, digital signature schemes, key-agreement algorithms, cryptographic hash functions, and authentication codes. Applications considered are secure electronic mail, secure communications, directory authentication and network management, banking, and escrowed encryption     

Analytical solution of a system of nonlinear measuring equations of a 12-pole microwave reflectometer

Analytical solution of a system of nonlinear measuring equations of a 12-pole microwave reflectometer was obtained. Criteria for selecting a true solution in the general case were developed and the analysis was conducted for a number of particular cases that may generate practical interest.     

Surface tension isotherms of a free surface and grain boundaries in the Cu-Sn system

Surface tension of pure copper and its alloys with Sn has been measured at 1000°C in a hydrogen atmosphere. Surface tension of a free surface equaled 1.81 N/m for pure copper, and 1.55, 1.38, and 1.28 N/m for the alloys with 0.05, 0.22, and 0.33 at % Sn, respectively; surface tension at grain boundaries equaled 0.5 N/m for pure copper, and 0.36, 0.3, and 0.23 N/m for the alloys, respectively. Based on these data, the concentration dependence of tin absorption at a free surface and grain boundaries has been calculated. Parameters of Sn absorption at grain boundaries and a free surface of copper have been compared with those of Sb and Bi.     

Redox Equilibrium of Iron in Silicate Glasses

The effect of some additives on the equilibrium of valence forms of iron is investigated. It is demonstrated that tin and carbon more significantly than fluorine reduce iron. The redox potential of the glass matrix affects the equilibrium between difference valence forms of iron much less than additives correcting spectral characteristics of glass.     

Film Formation in Binary Sol-Gel Systems

The film-forming capacity of binary systems containing Sb₂O₃, SnO₂, CeO₂, Y₂O₃, Nd₂O₃, Bi₂O₃, V₂O₅, ZnO, CuO, CdO, and Al₂O₃ are investigated. The best film-formers are Sb₂O₃ and SnO₂, whereas ZnO, CuO, CdO, and Al₂O₃ cannot produce films of optical quality. The rest of considered oxides do not impair the clarity of coatings when their molding content is 20 – 50%. A proportional dependence is established between the refractive index and the reflection coefficient of a film and the refractive indexes of oxides making parts of this film, as well as between the concentration of deposited FFS, the film-forming capacity of oxides, and the film thickness.     

Passive-Based Walking Robot

In this article, we presented our passive-based biped Denise. Using only two foot contact switches as sensors and simple on/off pneumatic muscle action, it walks at 0.4 m/s and can handle floor disturbances up to 6 mm (leg length is 0.7 m). Its simplicity, efficiency, and die natural look of its motions make it a promising lead for the development of commercially viable humanoid robots. The aim of this article is to provide other researchers enough details so that they can reproduce the work or use it as a basis for future research.     

Solution-Processed n-Type Organic Field-Effect Transistors With High on /off Current Ratios Based on Fullerene Derivatives

Solution-processed n-type organic field-effect transistors (OFETs) based on the fullerene derivative {6}-1-(3-(2- thienylethoxycarbonyl)-propyl)-{5}-l-phenyl-[5,6]-C61 (TEPP) and phenyl-C61-butyric acid methyl ester (PCBM) in a multiring source/drain structure are reported. Devices with TEPP show high electron mobility up to 7.8 x 10^-2 cm²/Vs in the saturation regime for bottom-contact OFETs with Au S/D electrodes with a solution-processed fullerene derivative. The ON/OFF ratios reported in this letter, which are in the range of 10⁵ -10⁶, are among the highest values reported for such devices. This mobility is always higher compared to PCBM devices prepared in identical conditions. The mobility of TEPP and PCBM increased with increasing temperatures in the range of 100-300 K with activation energy of 78 and 113 meV, respectively, which suggests that the thermally activated hopping of electrons is dominant in TEPP.