Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures

The dielectric properties and AC electrical conductivity (σ_ac)of the (Ni/Au)/Al_0.22Ga_0.78N/AlN/GaN heterostructures, with and without the SiN_x passivation, have been investigated by capacitance-voltage and conductance-voltage measurements in the wide frequency (5kHz-5 MHz) and temperature (80-400 K) range. The experimental values of the dielectric constant (ε′), dielectric loss (ε′′), loss tangent (tanδ), σ_ac and the real and imaginary part of the electric modulus (M′ and M′′) were found to be a strong function of frequency and temperature. A decrease in the values of ε′ and ε′′ was observed, in which they both showed an increase in frequency and temperature. The values of M′ and M′′ increase with increasing frequency and temperature. The σ_ac increases with increasing frequency, while it decreases with increasing temperature. It can be concluded, therefore, that the interfacial polarization can occur more easily at low frequencies and temperatures with the number of interface states density located at the metal/semiconductor interface. It contributes to the ε′ and σ_ac.     

Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate

The In_xGa_1?xN epitaxial layers, with indium (x) concentration changes between 0.16 and 1.00 (InN), were grown on GaN template/(0001) Al₂O₃ substrate by metal organic chemical vapour deposition. The indium content (x), lattice parameters and strain values in the InGaN layers were calculated from the reciprocal lattice mapping around symmetric (0002) and asymmetric (10–15) reflection of the GaN and InGaN layers. The characteristics of mosaic structures, such as lateral and vertical coherence lengths, tilt and twist angle and heterogeneous strain and dislocation densities (edge and screw dislocations) of the InGaN epilayers and GaN template layers were investigated by using high-resolution X-ray diffraction (HR-XRD) measurements. With a combination of Williamson–Hall (W-H) measurements and the fitting of twist angles, it was found that the indium content in the InGaN epilayers did not strongly effect the mosaic structures’ parameters, lateral and vertical coherence lengths, tilt and twist angle, or heterogeneous strain of the InGaN epilayers.     

Optimization of electrochemical treatment of industrial paint wastewater with response surface methodology

The electrochemical oxidation of water-based paint wastewater was investigated batch-wise in the presence of NaCl electrolyte with carbon electrodes for the first time in literature. The electrochemical treatment conditions were optimized using response surface methodology where potential difference, reaction temperature and electrolyte concentration were to be minimized while chemical oxygen demand (COD), color and turbidity removal percents and initial COD removal rate were maximized at 100% pollution load. The optimum conditions were satisfied at 35 g/L external electrolyte concentration, 30 degrees C reaction temperature and 8 V potential difference (64.37 mA/cm(2) current density) realizing 51.8% COD and complete color and turbidity removals, and 3010.74 mg/Lh initial COD removal rate. According to these results, the electrochemical method could be a strong alterative to conventional physicochemical methods for the treatment of water-based paint wastewater.     

From Precursor Chemistry to Gas Sensors: Plasma‐Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications

The identification of bis‐3‐(N,N‐dimethylamino)propyl zinc ([Zn(DMP)₂], BDMPZ) as a safe and potential alternative to the highly pyrophoric diethyl zinc (DEZ) as atomic layer deposition (ALD) precursor for ZnO thin films is reported. Owing to the intramolecular stabilization, BDMPZ is a thermally stable, volatile, nonpyrophoric solid compound, however, it possesses a high reactivity due to the presence of Zn‐C and Zn‐N bonds in this complex. Employing this precursor, a new oxygen plasma enhanced (PE)ALD process in the deposition temperature range of 60 and 160 °C is developed. The resulting ZnO thin films are uniform, smooth, stoichiometric, and highly transparent. The deposition on polyethylene terephthalate (PET) at 60 °C results in dense and compact ZnO layers for a thickness as low as 7.5 nm with encouraging oxygen transmission rates (OTR) compared to the bare PET substrates. As a representative application of the ZnO layers, the gas sensing properties are investigated. A high response toward NO₂ is observed without cross‐sensitivities against NH₃ and CO. Thus, the new PEALD process employing BDMPZ has the potential to be a safe substitute to the commonly used DEZ processes.     

Statistical investigation of wave power potential in the North Aegean Sea

Clean Technologies and Environmental Policy - Wave energy is recognized as a significant renewable energy source with a high energy density and very low environmental impact. Today, in parallel...     

CVD Grown Tungsten Oxide for Low Temperature Hydrogen Sensing: Tuning Surface Characteristics via Materials Processing for Sensing Applications

The intrinsic properties of semiconducting oxides having nanostructured morphology are highly appealing for gas sensing. In this study, the fabrication of nanostructured WO₃ thin films with promising surface characteristics for hydrogen (H₂) gas sensing applications is accomplished. This is enabled by developing a chemical vapor deposition (CVD) process employing a new and volatile tungsten precursor bis(diisopropylamido)-bis(tert-butylimido)-tungsten(VI), [W(N^tBu)₂(NⁱPr₂)₂]. The as-grown nanostructured WO₃ layers are thoroughly analyzed. Particular attention is paid to stoichiometry, surface characteristics, and morphology, all of which strongly influence the gas-sensing potential of WO₃. Synchrotron-based ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), X-ray photoelectron emission microscopy (XPEEM), low-energy electron microscopy (LEEM) and 4-point van der Pauw (vdP) technique made it possible to analyze the surface chemistry and structural uniformity with a spatially resolved insight into the chemical, electronic and electrical properties. The WO₃ layer is employed as a hydrogen (H₂) sensor within interdigitated mini-mobile sensor architecture capable of working using a standard computer's 5 V 1-wirebus connection. The sensor shows remarkable sensitivity toward H₂. The high, robust, and repeatable sensor response (S) is attributed to the homogenous distribution of the W⁵⁺ oxidation state and associated oxygen vacancies, as shown by synchrotron-based UPS, XPS, and XPEEM analysis.     

Influence of hydroxypropyl beta-cyclodextrin on the corneal permeation of pilocarpine

The influence of hydroxypropyl β-cyclodextrin (HPβCD) on the corneal permeation of pilocarpine nitrate was investigated by an in vitro permeability study using isolated rabbit cornea. Pupillary-response pattern to pilocarpine nitrate with and without HPβCD was examined in rabbit eye. Corneal permeation of pilocarpine nitrate was found to be four times higher after adding HPβCD into the formulation. The reduction of pupil diameter (miosis) by pilocarpine nitrate was significantly increased as a result of HPβCD addition into the simple aqueous solution of the active substance. The highest miotic response was obtained with the formulation prepared in a vehicle of Carbopol® 940. It is suggested that ocular bioavailability of pilocarpine nitrate could be improved by the addition of HPβCD.     

The magnetic anisotropy of thin epitaxial CrO<Subscript>2</Subscript> films studied by ferromagnetic resonance

The magnetic anisotropy of thin epitaxial films of chromium dioxide (CrO₂) has been studied as a function of the film thickness by the ferromagnetic resonance (FMR) technique. CrO₂ films with various thicknesses in the range from 27 to 535 nm have been grown on (100)-oriented TiO₂ substrates by chemical vapor deposition using CrO₃ as a solid precursor. In a series of CrO₂ films grown on the substrates cleaned by etching in a hydrofluoric acid solution, the FMR signal exhibits anisotropy and is strongly dependent on the film thickness. The magnetic properties of CrO₂ films are determined by a competition between the magnetocrystalline and magnetoelastic anisotropy energies, the latter being related to elastic tensile stresses caused by the lattice mismatch between the film and the substrate. In the films of minimum thickness (27 nm), this strain-induced anisotropy is predominant and the easy magnetization axis switches from the [ 001] crystallographic direction (characteristic of the bulk magnet) to the [ 010] direction.     

Attenuated total reflection-infrared nanofluidic chip with 71 nL detection volume for in situ spectroscopic analysis of chemical reaction intermediates

We present a micromachined silicon attenuated total reflection-infrared (ATR-IR) crystal with integrated nanofluidic glass channels which enables infrared spectroscopic studies with only 71 nL sample volume. Because of the short path length through silicon, the system allows IR spectroscopy down to 1200 cm(-1), which covers the typical fingerprint region of most organic compounds. To demonstrate proof-of-principle, the chip was used to study a Knoevenagel condensation reaction between malononitrile and p-anisaldehyde catalyzed by different concentrations of 1,8-diazabicyclo[5.4.0]undec-7-ene (DBU) in solvent acetonitrile. By in situ measurement, it was demonstrated for the first time that at certain concentrations of DBU, reaction intermediates become stabilized, an effect that slows down or even stops the reaction. This is thought to be caused by increased ionic character of the solvent, in which protonated DBU stabilizes the intermediates. This clearly demonstrates that infrared mechanistic studies of chemical reactions are feasible in volumes as little as 71 nL.     

An electron microscope study of thin ferrite films prepared by the oxidation of high purity vacuum-evaporated metal thin films

The oxidation of thin films of nickel, cobalt, iron, NiFe₂ and CoFe₂ has been investigated between 200 and 1200° C. The oxidation products for the elemental metals differ from the oxidation products observed in previous work upon bulk material. The oxidation mechanism proposed for bulk material is in general still valid in the thin film situation. Above oxidation temperatures of approximately 850° C both NiFe₂ and CoFe₂ form the respective ferrites, although in the case of nickel ferrite, traces of the -Fe₂O₃ tetragonal superstructure can still be detected at oxidation temperatures of 1200° C. Films of nickel ferrite and cobalt ferrite upon single-crystal magnesium oxide substrates, produced by oxidation of vacuum-deposited NiFe₂ and CoFe₂ thin films, have been investigated by transmission and scanning electron microscopy. It has been found that (100) nickel ferrite prepared by this technique grows epitaxially upon (100) magnesium oxide.