The GS algorithm for exact linearization to Brunovsky normal form

An algorithm utilizing the minimal number of integrations for the exact linearization of nonlinear systems to Brunovsky normal form under nonlinear feedback is presented. The tools which are involved are based on classical constructions appearing in the theory of exterior differential systems     

Gain recovery of bulk semiconductor optical amplifiers

The gain recovery time of 1.55-μm bulk semiconductor optical amplifiers (SOA's) with lengths from 500 to 1500 μm has been measured with a continuous-wave (CW) probe in the time domain. It is shown to decrease with increasing length down to 60 ps for the longest SOA. This behavior is theoretically explained. A lower limit for the recovery time is observed and explained     

Mesa-isolated GaAs Schottky-barrier photodiodes

The design, fabrication and characterisation of GaAs Schottky-barrier photodiodes with evaporated, free-standing-metal airbridges is reported. The photodiodes were fabricated using all dry-etching techniques. Anisotropic chemically assisted ion beam etching was used to etch vertical sidewall mesas, and isotropic reactive ion etching was used to etch a lateral tunnel. A free-standing-metal airbridge created by the lateral tunnel etch results in isolation of the active area at the same time providing free-standing-metal interconnection to the contact pad.<>     

论网络升级方式与光纤选择的关系

在重点说明影响传输光纤设计的主要问题的同时，简要介绍了各种升级方式所面临的主要技术挑战，并详细说明这些挑战对传输光纤提出的技术要求。     

Mechanism of current transfer in oxidized iron ore minerals

Mining Institute, Krivoi Rog. Translated from Fiziko-Technicheskie Problemy Razrabotki Poleznykh Iskopaemykh, No. 2, pp. 107-116, March-April, 1992.     

High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping andInGaAs emitter contacts

The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×10⁸ h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology     

Chemometrics in surface spectroscopy

During the past 15 years the advent of laboratory microcomputers has had a dramatic effect on the information we can extract from spectroscopic data. In this paper we take a brief look at the historical development of this field, consider some of the techniques being currently researched, and comment on possible future trends.     

User mobility pattern scheme for location update and paging in wireless systems

The user mobility pattern (UMP) scheme is introduced for location update and paging in wireless systems where mobile terminals (MTs) maintain their history data in a database called user mobility history (UMH). During a location update, a UMP is derived from UMH and registered to the network. Unless the MT detects that it has moved out of the registered UMP, it does not perform any other location update. On the other hand, cells are paged selectively according to the cell entry times in the registered UMP upon a call arrival for the MT. The related data structures and the protocols for the UMP scheme are presented in the paper. The experimental results show that the UMP scheme outperforms the time-based and movement-based location update schemes as well as the blanket, selective, and velocity paging schemes.     

The entropy of terrestrial solar radiation

Complete thermodynamic evaluation of energy conversion devices calls for energy and entropy balance equations. While the subject of radiation energy has been well taken care of, the same is not true for the entropy of radiation. This has become obvious from the discussion about the maximum work that can be drawn from solar radiation. This article collects and reflects the basic equations needed to calculate the radiation entropy, and it discusses the influence of the three major input functions on the entropy, namely the spectral and hemispherical distribution of radiation intensity, and its degree of polarization. Results of realistic calculations using atmospheric models are given in the last section in form of an energy-entropy diagram.