Characterization of GaN and In x Ga1−x N films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures

Structural and optical studies have been performed on GaN, InGaN layers, In_0.08Ga_0.92N/GaN heterostructures, In_0.08Ga_0.92N/In_0.02Ga_0.98N single and multiquantum wells grown by metal organic chemical vapor deposition (MOCVD) and GaN by molecular beam epitaxy (MBE) on GaN templates by using transmission electron microscopy (TEM), X-ray diffraction (XRD), and photoluminescence (PL). The layers are found to be high quality with low defect density, on the order of 10⁶ cm^?2, which are mainly related to the threading dislocations originating/propagating from the hydride vapor phase epitaxy (HVPE) GaN template. The interface between the layers and substrate could not be detected by TEM and was therefore deemed to be of high quality. Convergent beam electron diffraction studies revealed that the polarity of the films is Ga-polarity, which is the same as that of the substrate. A dual structure with different compositions and having thicknesses of 10 and 25 nm was observed in InGaN layers grown on GaN in one of the heterostructure samples. The full width at half maximum (FWHM) of the XRD rocking curves of (0 0 0 2) for heterostructures and quantum wells were found to be in the range of 15–28 arcmin for a slit width of 2 mm. PL studies on GaN layers grown by MBE and MOCVD on GaN templates are reasonably similar. The PL spectra from all the MBE and MOCVD epilayers and the substrate contain a plethora of sharp peaks related to excitonic transitions. With the presence of donor-bound exciton peaks and their associated two-electron satellites, the binding energies of two distinct shallow donors (28.8 and 32.6 meV), which are attributed to Si and O, respectively, were determined. PL measurements revealed that the FWHM of the main donor bound exciton peak increased from 0.6 to 2.9 meV but no change in peak position (3.472 eV) was observed in GaN when doping with Si (5×10¹⁷ cm^?3). However, the intensities of the yellow band and the shallow donor–acceptor pair band increased 10 times as compared to that in the undoped GaN samples. In the case of InGaN/GaN heterostructures, a similar trend was observed when compared to the doped samples. In the multiquantum well In_0.08Ga_0.92N/In_0.02Ga_0.98N heterostructures, the activation energy of the exciton emission, found to be 18 meV, was the lowest in the samples studied. The peak at 3.02 eV related to the InGaN was strongly pronounced in the In_0.08Ga_0.92N/In_0.02Ga_0.98N multiquantum well structure. In the In_0.08Ga_0.92N/In_0.02Ga_0.98N quantum well structures, the change in peak position with variation of temperature from 15 to 300 K in PL spectra is “S”-shaped. The cause for the “S” shape, i.e., a red–blue–red shift, is discussed.     

Thermodynamic Properties of Melts and Phase Equilibria in the Copper–Zirconium System

The vapor composition over and thermodynamic properties of Cu–Zr melts (5.1–85.0 at. % Zr) are studied by Knudsen cell mass spectrometry between 1191 and 1823 K. The data set obtained comprises more than 1100 activity values for various compositions and temperatures. The thermodynamic behavior of Cu–Zr melts is described in terms of the associated-solution approach with an accuracy no worse than the experimental accuracy. The melts are shown to contain two molecular species: CuZr and Cu₂Zr. The contributions of different types of chemical bonding to the Gibbs energy and enthalpy of formation of Cu–Zr melts are asymmetrical and shifted from the equiatomic composition in opposite directions: the extremum of covalent bonding is shifted to the Cu-rich side, while metallic bonding is more significant in Zr-rich alloys. The rapid temperature variation of covalent bonding leads to a large excess heat capacity C _p ^E of the melts and a negative excess entropy _f S ^E, which rapidly drops with decreasing temperature. It is shown that not only C _p ^E and _f S ^E but also their temperature variations are governed by the parameters of association reactions and depend more strongly on the entropy than on the enthalpy of complex formation. This indicates that, in the general case, the glass-forming capabilities of melts are independent of the interparticle interaction and accounts for the pronounced tendency of Cu–Zr melts toward amorphization.     

Multifilter Phase-Lock Loop Nonlinear Analysis and Design Criterion

In this paper a nonlinear analysis of a multifilter phase-lock loop (MPLL) by using the method of "harmonic balance" is presented. The particular MPLL considered has a low-pass filter and a bandpass filter in parallel. An analytic expression for the relationship between the input signal phase deviation and the phase error is determined for sinusoidal FM in the absence of noise. The expression is used to determine bounds on the proper operating region for the MPLL and to investigate the "jump phenomenon" previously observed. From these results the proper modulation index, modulating frequency, etc., used for the design of an MPLL is determined. Data for the loop unlock boundary obtained from the theoretical expression are compared to data obtained from analog computer simulations of the MPLL.     

Variational principles for steady heat conduction with mixed boundary conditions

Summary For the boundary value problem of steady heat conduction with general boundary conditions a variational problem is formulated by adding a simple surface integral to Butler's volume integral.This research was supported by the National Science Foundation, Grant GK-108.     

n-CdS/p-ZnIn2Se4 thin film solar cell

The photovoltaic behaviour of a CdS/ZnIn₂Se₄ vacuum-evaporated thin film solar cell is reported for the first time. Because of the band gap of ZnIn₂Se₄ (1.93 eV) this combination of semiconductor materials seems to be suitable for use as one of the junctions in tandem solar cell configurations. Uncoated cells exhibited efficiencies of the order of 1.5% under an illumination of 100 mW cm^-2.     

Deviation from stoichiometry in α-HgI2

Measurements of lattice constants, density and transition temperature have been carried out on α-HgI₂ single crystals grown both from vapor phase and from solution under different stoichiometric conditions. Stoichiometry deviations on both Hg- and I-rich sides were found. Large supersaturations extending on the Hg-rich side up to about 4 × 10^?2$\text{I}{}_{\mathrm{Hg}}\text{HgI}{}_2$ mole ratio and on the I-rich side up to about 10^?2$\text{I}{}^{\mathrm{?}}{}_3\text{HgI}{}_2$ mole ratio were accomodated by the crystals. The interpretation of the results supports the assumption of the presence of mercury interstitials in the Hg-rich crystals and of I^?₃ anions in the I-rich crystals. The large deviations from stoichiometry are attributed to the non-stoichiometry of the mother phase and to the easiness of the crystal structure for accomodating interstitials rather than to characteristic thermodynamic equilibria of interstitials in the lattice.     

Quasi-stationary multiple stimulated Raman generation in the visible using optical fibers

Several orders of stimulated Raman scattering (SRS) in monomode and multimode fibers have been observed. The relatively low power in the visible used in the quasi-stationary regime permitted observation of sharply defined Stokes and anti-Stokes spectral lines without any continua. Results of pump-to-Stokes power conversion in a monomode fiber indicate a striking equivalence between pump power and fiber length. The dependence of multiple SRS generation/amplification with these parameters is investigated up to the limit of near total pump extinction. We propose a qualitative explanation of these facts, although a detailed theory of nonlinear behavior of fibers is wanting. Parametric four-photon mixing is again confirmed to account for the generation of stimulated anti-Stokes radiation in multimode fibers and its absolute absence in monomode fibers.     

Hybrid Frenkel-Wannier-Mott excitons at interfaces and in microcavities

We discuss the linear and nonlinear optical properties of organic-inorganic nanostructures (quantum wells and superlattices) brought about by resonance interactions between Frenkel excitons in organic QWs and Wannier-Mott excitons in semiconductor QWs. We show that such a coupling (Coulomb dipole-dipole at an interface and through the cavity photons in a microcavity) is responsible for the appearance of mixed Frenkel-Wannier excitations. We demonstrate that the new hybrid states and their dispersion curves can be tailored to engineer the enhancement of resonant optical nonlinearity, fluorescence efficiency and relaxation processes.