Low Temperature Physics at the Laboratoire National des Champs Magnétiques Pulsés in Toulouse

An overview over past and present activities and future developments at the Toulouse pulsed magnetic field facility is given, both as far as technical developments of the infrastructure, as well as low temperature physics performed at the LNCMP are concerned.     

Methane oxidation over vanadium-modified Pd/Al2O3 catalysts

Three different vanadium-modified Pd/Al₂O₃ catalysts were prepared and tested as catalysts for the deep oxidation of methane. Vanadium was added to the palladium catalyst by incipient wetness of palladium catalyst in order to modify its properties and improve its thermal stability and thioresistance. The behaviour of vanadium-modified catalysts depends on the concentration of this compound, being 0.5 wt.% the optimum amount. However, when strong catalyst poisons are present in the gas (SO₂), these modified catalysts do not show a better performance than unmodified catalyst. Bimetallic catalysts were tested with and without further reduction, being observed that reduced bimetallic catalysts perform worse than the non-reduced ones.     

Joint scheduling and power control supporting multicasting in wireless ad hoc networks

This paper addresses the problem of power control in a multihop wireless network supporting multicast traffic. We face the problem of forwarding packet traffic to multicast group members while meeting constraints on the signal-to-interference-plus-noise ratio (SINR) at the intended receivers. First, we present a distributed algorithm which, given the set of multicast senders and their corresponding receivers, provides an optimal solution when it exists, which minimizes the total transmit power. When no optimal solution can be found for the given set of multicast senders and receivers, we introduce a distributed, joint scheduling and power control algorithm which eliminates the weak connections and tries to maximize the number of successful multicast transmissions. The algorithm allows the other senders to solve the power control problem and minimize the total transmit power. We show that our distributed algorithm converges to the optimal solution when it exists, and performs close to centralized, heuristic algorithms that have been proposed to address the joint scheduling and power control problem.     

An Acoustic Converter Used to Measure Ionizing Radiation Energy Loss

A monitor is proposed based on ultrasonic production when ionizing radiation passes through a medium. The recording element is a 0.2 mm aluminum plate mounted in a ceramic acoustic converter AC in the form of a wedge of thickness 2 mm. The low plate thickness minimizes the beam parameter distortion, while special technology used in the AC provides high sensitivity. The device has been calibrated in the proton beam from the ITEP accelerator at 200 MeV with 2·10⁹–6·10¹⁰ particles in a pulse and a pulse length of 70 nsec.     

Analogue switch for very low-voltage applications

A new analogue switch suitable for operation at very low-voltage supply in a standard CMOS technology is presented. The proposed switch is based on 'quasi-floating-gate' transistors and has a simple and compact structure. For illustrative purposes, two sample-and-hold circuits operating from a single supply voltage close to the threshold voltage of a transistor, and using the proposed technique, are presented. Experimental results obtained from prototypes in a 1.5 /spl mu/m CMOS technology are provided.     

Contact stresses in an infinite plate containing a smooth circular insert under thermal load

Summary. A solution is presented for the contact problem with a smooth circular elastic insert in an infinite, linearly elastic plate under thermal load. The thermal load considered here includes the temperature gradient applied at infinity and a uniform temperature change. One of the major difficult parts in solving the present problem is that separation may occur between an insert or inclusion and the surrounding matrix under a nonuniform expansion of the matrix and the insert due to a temperature change. Based on the complex potential theory and the method of analytical continuation, the problem is reduced to a singular integro-differential equation which is solved numerically. Results are presented for the contact angle and for the normal and circumferential stresses at the plate-insert interface. Exact solutions are found for the current problem for a special case when the material properties of the plate and the insert are identical.     

Pinpoint injection of microtools for minimally invasive micromanipulation of microbe by laser trap

This paper reports transportation of the target microbe by the laser trapped microtools with minimum laser irradiation to the target. The size of a microtool (MT) is around micrometer. The MTs are manipulated by the focused laser under the microscope to manipulate the target microbe. Here we propose a pinpoint injection method of MTs at the desired location in the microchamber, which is filled with liquid. At first, we classified the injection method of the MTs in four categories. Here we employed a new method to install the MTs inside the microchamber. We developed a MT holding chip to install the MTs. The MTs were injected in the microchamber, and were manipulated successfully by the laser scanning micromanipulator to transport the target microbe for separation. The proposed method is useful for the pinpoint injection of MTs and separation by the indirect micromanipulation.     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

Photosensitivity of surface barrier structures based on Cu(In,Ga)Se<Subscript>2</Subscript> films grown by codeposition in vacuum

Polycrystalline Cu(In,Ga)Se₂ (CIGS) films with various ratios of Cu, In, and Ga were grown by codeposition of all elements in vacuum. The X-ray diffraction study showed that the films are single-phase and possess a chalcopyrite structure with predominant [112] orientation. The films exhibited a mirror smooth surface and had a close-packed structure composed of crystallites with clear faceting and a transverse size of 0.1–0.3 μm. Related surface barrier structures of the (In,Ag)/Cu(In,Ga)Se₂ type were obtained and their spectra of the quantum efficiency of photoconversion were studied. The obtained structures can be used for optimization of the CIGS film technology.