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991.
The fracture toughness and uniaxial tensile yield strengths of unmodified and CTBN-rubber-modified epoxies were measured under hydrostatic pressure. The purpose of these experiments was to learn how suppressing cavitation in rubber particles affects the deformation mechanisms and the fracture toughness of rubber-modified epoxy. It was found that the cavitation of CTBN-rubber could be suppressed at a relatively low pressure (between 30 and 38 M Pa). With cavitation suppressed, the rubber particles are unable to induce massive shearyielding in the epoxy matrix, and the fracture toughness of the rubber-modified epoxy is no higher than that of the unmodified epoxy in the pressure range studied. Unmodified epoxy shows a brittle-to-ductile transition in fracture toughness test. The reason for this transition is the postponement of the cracking process by applied pressure.Work performed while on a sabbatical leave at the University of Michigan.  相似文献   
992.
The issue of developing effective and robust schemes to implement a class of the Ogden-type hyperelastic constitutive models is addressed. To this end, special purpose functions (running under MACSYMA) are developed for the symbolic derivation, evaluation, and automatic FORTRAN code generation of explicit expressions for the corresponding stress function and material tangent stiffness tensors. These explicit forms are valid over the entire deformation range, since the singularities resulting from repeated principal-stretch values have been theorectically removed. The required computational algorithms are outlined, and the resulting FORTRAN computer code is presented.  相似文献   
993.
We derive an effective single-band Hubbard type Hamiltonian for CuO2 planes. The Hamiltonian includes both electron-electron repulsion and electron-phonon coupling to oxygen vibrational modes. We start with first-principles density functional theory parameters and then map onto a single-band model. Unlike previous mappings to a single-band Hamiltonian, ours explicitly preserves the Fermi surface shape and matrix elements of the many-band Hamiltonian. We consider both in-plane oxygen breathing modes as well as out-of-plane tilting modes. The latter modes have a quadratic electron-phonon coupling, and are also highly anharmonic in La2CuO4 based superconductors. The coupling to breathing modes is too small to account for highT c, while the coupling to quadratic modes is much stronger even though they would be neglected in a standard Migdal-Eliashberg approach to superconductivity.  相似文献   
994.
Highlights key considerations that should be addressed by consulting psychologists to demonstrate the value of assessment services that they provide to clients. Executive and managerial assessment (EMA) is done in a variety of contexts, at multiple levels, and for multiple purposes. In order to demonstrate the value of EMA, it is suggested that consultants present a 2-part framework of evidence to decision makers. First, they should present the results of utility analysis, using the very best parameter estimates available. Second, they should present a detailed linkage of essential job tasks to required knowledge, skills, abilities, and other characteristics (KSAOs). Then, KSAOs should be linked to instruments of prediction back to essential job tasks. Value is therefore demonstrated in 2 ways: in financial terms as well as by presenting construct-oriented evidence of validity. (PsycINFO Database Record (c) 2010 APA, all rights reserved)  相似文献   
995.
双波长Nd:YAG脉冲激光器的实验研究   总被引:8,自引:1,他引:7  
根据多波长同时振荡条件,我们建立了大能量1064nm和1318nm同时运转的双波长脉冲Nd:YAG激光器。得到了1064nm和1318nm的激光输出能量分别为0.594J和0.861J,效率分别为0.31%和0.45%。实验结果说明了该双波长激光器有较好的时间和空间重选性。  相似文献   
996.
Centralized and distributed automated guided vehicle system (AGVS) models for materials handling, and the model for part processing are integrated into a single coherent model. This formulation can be used to collectively schedule and control the entire flexible manufacturing system (FMS) as opposed to the traditional separate scheduling of part processing and material handling. The two AGVS models are based on Petri nets and can be directly used in the scheduling method that uses Petri nets for formulation and heuristic search for solution. This method employs a global search to seek the optimal operation of an entire FMS. Scheduling examples are presented and the method compares favorably with the results simulated using heuristic dispatch rules  相似文献   
997.
The manufacturing message specification (MMS) is the ISO standard communication protocol specific to manufacturing. To analyze MMS design and performance, service unit automats are introduced to represent individual MMS services, while service connection Petri Nets (PNs) are constructed from these automats to describe MMS service connections and processes. This approach makes MMS protocol specification and analysis possible in terms of well-developed concepts and methods in PN theory. It leads to a distributed and hierarchical model of MMS software system by integrating service connection PNs. A generalized stochastic PN for MMS performance evaluation is obtained by incorporating service parameters and time factors into the model. A technique based on T-invariants is used to simplify the performance analysis  相似文献   
998.
Enhanced performance is demonstrated in n-type metal-oxide-semiconductor field-effect transistors with channel regions formed by pseudomorphic growth of strained Si on relaxed Si1-xGex. Standard MOS fabrication techniques were utilized, including thermal oxidation of the strained Si. Surface channel devices show low-field mobility enhancements of 80% at room temperature and 12% at 10 K, when compared to control devices fabricated in Czochralski Si. Similar enhancements are observed in the device transconductance. In addition, buried channel devices show peak room temperature mobilities about three times that of control devices  相似文献   
999.
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device  相似文献   
1000.
C ion implantation has been employed, for the first time, to form the buried p-layer in GaAs, self-aligned, ion implanted JFETs. Comparable DC performance was seen for JFETs with C or Mg implants; however, C-backside JFETs showed superior high-frequency performance. High dose C-backside devices had a ft of 28.3 GHz and a fmax of 43.2 GHz for a 0.5 μm gate length that were 28% and 46% higher, respectively, than comparable Mg-implanted JFETs. This enhancement is a result of the lower Cgs in the C-backside device resulting from he inherently low activation of the implanted C below the channel while the C still effectively compensated the tail of the Si-channel implant. This approach relaxes the trade-off between optimizing the DC and the AC performance for the buried p-implant in GaAs JFETs and MESFET's  相似文献   
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