Voltage transfer function synthesis using current conveyors

A synthesis procedure for generating current conveyor active filters is presented, and a novel network which realises the general 2nd-order voltage transfer function is given.<>     

GaAs pHEMT-based technology for microwave applications in a volume MMIC production environment on 150-mm wafers

The establishment of a 150-mm (6-in) gallium arsenide (GaAs) facility is described together with the development of very high yielding and cost-effective semiconductor device technologies and a manufacturing capacity of over 40000 wafers/annum. The background to the demand for very high volumes of RF products for this market is discussed, together with the prospects for future growth. The paper describes recent process development by the utilization of a data-driven yield management system to support the delivery of high-quality RF products to customers. Finally, "end of line" DC and RF testing of finished 150-mm GaAs pHEMT foundry wafers is described, enabling scalar measurements of power, noise, and intermodulation products as well as vector measurements of S-parameters and noise parameters at frequencies of up to 40 GHz.     

Earing in cup drawing face-centered cubic single crystals and polycrystals

A simple model of flange behavior during cup drawing was used to predict the earing profile of deep-drawn cups. The relationship between yield surface shape and earing tendency was established, with plane stress yielding corresponding to no hold-down pressure on the flange and plane strain corresponding to no thickening. Using the Schmid law, the earing model was applied to the case of a single crystal in cube position and compared to Tucker’s well-known results.^[6] For the plane strain case, good agreement was obtained with the experiment; but for plane stress, the predicted profile did not agree with the experimental one. Using the Taylor/ Bishop and Hill (TBH) theory^[8,9] and measured crystallite orientation distribution functions (CODF), the model was applied to the case of high-purity aluminum sheet with various cold-rolling reductions (35, 60, 80, and 90 pct). The major experimental trends were again correctly predicted by the plane strain case.     

A diagonalized multilevel fast multipole method with spherical harmonics expansion of the k-space Integrals

Diagonalization of the fast multipole method (FMM) for the Helmholtz equation is usually achieved by expanding the multipole representation in propagating plane waves. The resulting k-space integral over the Ewald sphere is numerically evaluated. Storing the k-space quadrature samples of the method of moments (MoM) basis functions constitutes a large portion of the overall memory requirements of the resulting algorithm for solving the integral equations of scattering and radiation problems. In this paper, it is proposed to expand the k-space representation of the basis functions by spherical harmonics in order to reduce the sampling redundancy introduced by numerical quadrature rules. Aggregations, plane wave translations, and disaggregations in the realized multilevel fast multipole method (MLFMM) are carried out using the k-space samples of a numerical quadrature rule. However, the incoming plane waves on the finest MLFMM level are expanded in spherical harmonics again. Thus, due to the orthonormality of spherical harmonics, the testing integrals for the individual testing functions are simplified into series over products of spherical harmonics expansion coefficients. Overall, the resulting MLFMM can save a considerable amount of memory without compromising accuracy and numerical speed.     

Comparison between the effects of positive noncatastrophic HBM ESDstress in n-channel and p-channel power MOSFETs

The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain