High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

Breakup of Unstable Drops and Bubbles at a Vibrating Cylindrical Nozzle

A condition for the formation of unstable drops of an ideal liquid in a gas and bubbles in an ideal liquid at a cylindrical nozzle executing longitudinal vibrations is considered. Expressions are derived for the particle size as functions of the parameters of the nozzle and the characteristics of vibration. A necessary and sufficient condition for the formation of a stable particle at the vibrating nozzle is determined. The theoretical and experimental data are in satisfactory agreement.     

Overlapping Schwarz and Spectral Element Methods for Linear Elasticity and Elastic Waves

The classical overlapping Schwarz algorithm is here extended to the spectral element discretization of linear elastic problems, for both homogeneous and heterogeneous compressible materials. The algorithm solves iteratively the resulting preconditioned system of linear equations by the conjugate gradient or GMRES methods. The overlapping Schwarz preconditioned technique is then applied to the numerical approximation of elastic waves with spectral elements methods in space and implicit Newmark time advancing schemes. The results of several numerical experiments, for both elastostatic and elastodynamic problems, show that the convergence rate of the proposed preconditioning algorithm is independent of the number of spectral elements (scalability), is independent of the spectral degree in case of generous overlap, otherwise it depends inversely on the overlap size. Some results on the convergence properties of the spectral element approximation combined with Newmark schemes for elastic waves are also presented.     

The influence of oxygen partial pressure on growth of the (Hg,Re)-1223 intergrain junction

Hg/sub 0.82/Re/sub 0.18/Ba/sub 2/Ca/sub 2/Cu/sub 3/O/sub 8+/spl delta// polycrystalline samples were successfully obtained by using different oxygen partial pressure in the annealing treatment of the precursor ceramic. The doping state was confirmed by X-ray powder diffraction pattern analysis and by observing distinct thermopower values at room temperature. Also, the intergrain regions have shown an improvement in the critical current density when using the precursor preparation with 10% O/sub 2/ and 90% Ar (optimal doped). The optimal doped sample has presented the highest /spl alpha/ exponent of the J/sub c//spl prop/[1-(T/T/sub c/)/sup 2/]/sup /spl alpha// dependence. For the case of (Hg,Re)-1223 polycrystalline superconductor applications, the /spl alpha/ exponent can be used as a junction quality parameter.     

The Influence and Interpretation of Surface Parameters for Wetting Transitions in Ternary Mixtures

Starting from a microscopic Hamiltonian defined on a semi-infinite cubic lattice, and employing a mean-field approximation, the surface parameters relevant for wetting in confined ternary mixtures are derived. These are found in terms of the microscopic coupling constants, and yield a physical interpretation of their origins. In comparison with the standard expression for the surface free-energy density, several new terms arising from the derivation are identified. The influence of the surface parameters on a predicted unbinding transition in a mixture of oil, water, and amphiphile demonstrate that existing results are robust to the addition of the extra surface terms.     

Narrow-band correction of the residual amplitude modulation in frequency-modulation spectroscopy

We have developed a narrow-band controller in the MHz range, based on a field-programmable gate array. It is used to control the probe beam intensity in frequency-modulated spectroscopy experiments with an acoustooptic modulator. The residual amplitude modulation at the modulation frequency (2.5 MHz) is reduced by 50 dB. The first-harmonic detection of the signals is operated in saturation spectroscopy of I/sub 2/ at 514.5 nm and 501.7 nm. A reduction of the background noise and a large increase in the signal-to-noise ratio are obtained.     

Dispersion-relation-preserving FDTD algorithms for large-scale three-dimensional problems

We introduce dispersion-relation-preserving (DRP) algorithms to minimize the numerical dispersion error in large-scale three-dimensional (3D) finite-difference time-domain (FDTD) simulations. The dispersion error is first expanded in spherical harmonics in terms of the propagation angle and the leading order terms of the series are made equal to zero. Frequency-dependent FDTD coefficients are then obtained and subsequently expanded in a polynomial (Taylor) series in the frequency variable. An inverse Fourier transformation is used to allow for the incorporation of the new coefficients into the FDTD updates. Butterworth or Chebyshev filters are subsequently employed to fine-tune the FDTD coefficients for a given narrowband or broadband range of frequencies of interest. Numerical results are used to compare the proposed 3D DRP-FDTD schemes against traditional high-order FDTD schemes.     

Towards implementation of a nickel silicide process for CMOS technologies

In this paper, we review some of the advantages and disadvantages of nickel silicide as a material for the electrical contacts to the source, drain and gate of current and future CMOS devices. We first present some of the limitations imposed on the current cobalt silicide process because of the constant scaling, of the introduction of new substrate geometries (i.e. thin silicon on insulator) and of the modifications to the substrate material (i.e. SiGe). We then discuss the advantages of NiSi and for each of the CoSi₂ limitations, we point out why Ni is believed to be superior from the point of view of material properties, miscibility of phases and formation mechanisms. Discussion follows on the expected limitations of NiSi and some of the possible solutions to palliate these limitations.