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931.
Isothermal short-term creep of poly (vinylidene fluoride) (PVDF) monofilament sutures was determined at several temperatures between 10 and 90 °C under the stress of 10 MPa. Long term service performance was predicted for 10 decades of time. The compliance master curve as a function of time fits a hyperbolic sine equation. The temperature shift factor as a function of the temperature aT (T) is accurately represented by a general equation based on free volume. A simple relationship between the two parameters of the equation is explored. The viscoelasticity of PVDF is also seen in dynamic mechanical analysis performed at the frequency of 1 Hz. The origin of the viscoelastic character well present in the deformability of the PVDF in service is due to the occurrence of the αc relaxation that is active at ∼50 °C (E″ peak at 1 Hz). 相似文献
932.
933.
A defect-free, two-material component can be obtained via co-sintering by suitably altering the powder characteristics or compositions, as demonstrated in Part I. In this paper, a model to ascertain the suitability of material systems to be co-sintered without defects such as delamination or interface pores is presented. The model is based on the management of the stress induced due to the difference in shrinkage and an analysis of the in situ strength of the weaker material during sintering. Tool steel in combination with stainless steel admixed with boron and Fe-2Ni admixed with boron are two systems used to validate the model. The predictions of the model are in good agreement with the observations. 相似文献
934.
Cost estimates to guide pre-selection of processes 总被引:2,自引:0,他引:2
A process is a method of shaping, joining or surface-treating a material. Process selection has three steps. The first is to identify from the ‘menu’ of all available processes, the subset, which can give a chosen material the desired shape with the desired detail, precision and finish. The second is to choose, from among these, the ones that will do so at the lowest cost. The final step is to investigate the most promising processes in depth, exploring considerations such as availability, in-house experience, safety and environmental issues. The first two steps can be thought of as process pre-selection. Components have to be assembled and finished to create products. Here too, the ability to rank by cost, however crudely, helps guide pre-selection. Cost models are reviewed from the perspective of material and process selection. An approximate model is useful provided it has generality—that is, it must allow comparison of very different processes. Many approaches fail in this. One that works, based on resource consumption, is developed here and its use for selection is illustrated. It has been implemented as part of a tool that allows rapid pre-selection from a database of 112 processes. 相似文献
935.
Ionizing-Radiation Response of the GaAs/(Al, Ga)As PHEMT: A Comparison of Gamma- and X-ray Results 总被引:1,自引:0,他引:1
D. V. Gromov V. V. Elesin S. A. Polevich Yu. F. Adamov V. G. Mokerov 《Russian Microelectronics》2004,33(2):111-115
An experiment is reported on the effect of 60Co gamma rays or 45-keV x-ray photons on the GaAs/(Al, Ga)As PHEMT. It is shown that x-ray treatment can improve the dc performance of the device in some cases. This finding is attributed in part to the annealing or modification of DX centers. 相似文献
936.
We demonstrate a four-wavelength 10-GHz mode-locked erbium-doped fiber laser, with wavelength spacings of 3.5-5 nm. Nearly transform-limited Gaussian pulses of 11- to 14-ps duration are measured and all wavelengths are synchronous. 相似文献
937.
Acrylamide-based holographic recording materials have significant advantages and the composition of these materials has been optimized in terms of energetic sensitivity and diffraction efficiency. As a result, diffraction gratings with an efficiency of almost 80% for energetic exposures of 35 mJ/cm2 and a spatial frequency of 1000 lines/mm in photosensitive films 65 μm thick have been obtained. In this paper we present the effects of intensity, thickness, and variation in the concentration of each component by studying the angular responses of the diffraction gratings recorded in each composition. 相似文献
938.
939.
D. Mangelinck P. Gas T. Badche E. Taing F. Nemouchi C. Perrin-Pellegrino M. Vuaroqueaux S. Niel P. Fornara J. M. Mirabel L. Fares P. H. Albarede 《Microelectronic Engineering》2003,70(2-4):220-225
The formation of Ti silicides has been examined in flash memories with 0.25 μm linewidth by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. It has been observed that, after the first rapid thermal process and the selective metal etch, there is no silicide on the source and on a majority of drain contacts while C49-TiSi2 is found on the gate. A pre-amorphisation implant increases drastically the formation of C49-TiSi2 in the drain zone while modifications of annealing conditions have little impact. These results indicate that the formation of C49-TiSi2 is most likely controlled by nucleation and that this nucleation is sensitive to both the width and the length of the reaction zone. The formation of a Ti rich silicide may play an important role in this nucleation by decreasing the driving force for the formation of C49-TiSi2. Curiously enough, the formation of C49-TiSi2 appears thus as a major concern for the salicide process in flash memories. 相似文献
940.
A solar concentrator with one-axis tracking is being developed at our institute. This concentrator system achieves a high geometrical concentration ratio of 300 using a parabolic trough mirror and a three-dimensional second stage consisting of compound parabolic concentrators. The design of the system as well as the characterisation of the second stage is described in this paper. 相似文献