Multistage amplifier topologies with nested Gm-Ccompensation

This paper presents a multistage amplifier for low-voltage applications (<2 V). The amplifier consists of simple (noncascode) low gain stages and is stabilized using a nested transconductance-capacitance compensation (NGCC) scheme. The resulting topology is similar to the well known nested Miller compensation (NMC) multistage amplifier, except that the proposed topology contains extra G _m feedforward stages which are used to enhance the amplifier performance. The NGCC simplifies the transfer function of the proposed multistage amplifier which, in turn, simplifies its stability conditions. A comparison between the NGCC and NMC shows that the NGCC has wider bandwidth and is easier to stabilize. A four-stage NGCC amplifier has been fabricated using a 2-μm CMOS process and is tested using a ±1.0 V power supply. A dc gain of 100 dB has been measured. A gain bandwidth product of 1 MHz with 58° of phase margin and power of 1.4 mW can be achieved. The op amp occupies an active area of 0.22 mm². Step response shows that the op amp is stable     

Lightpath communications: an approach to high bandwidth opticalWAN's

An architectural approach that meets high bandwidth requirements by introducing a communication architecture based on lightpaths, optical transmission paths in the network, is introduced. Since lightpaths form the building block of the proposed architecture, its performance hinges on their efficient establishment and management. It is shown that although the problem of optimally establishing lightpaths is NP-complete, simple heuristics provide near optimal substitutes for several of the basic problems motivated by a lightpath-based architecture     

Upgrade of Systems Controlling Pneumatic Transport of Glass Batch Materials

An upgraded system for controlling pneumatic transportation of glass batch materials produced by the Stromizmeritel' JSC is considered. Comparative analysis of various schemes of control over the process of filling the pneumatic-cell pump with material is provided.     

Investigation and simulation of foam aluminum obtained from secondary aluminum raw materials by mechanical doping

The structure and phase composition of the samples of foam aluminum based on the AMg6 alloy (Al-6%Mg-0.7%Mn) obtained in a high-energy planetary mill are investigated. Mechanical doping provides high dispersity and homogeneity of all structural components including particles of the foam agent TiH₂, which allows one to obtain foam aluminum with a pore size of 1–5 mm at a density of 1.20–0.80 g/cm³. Mechanical properties of foam aluminum were estimated based on the results of compression tests. Based on preliminary investigations, an imitation model of foam formation is suggested that well describes the process of foam formation.     

Direct and inverse problems of high-viscosity fluid dynamics

Methods and algorithms of numerical simulation for three-dimensional thermal-convective motions of the inhomogeneous high-viscosity incompressible fluid in the direct and inverse time are described. In contrast to the direct-time problem, the inverse-time problem is ill-posed; to solve it, one of the variants of the quasi-reversibility method is used. The main attention is focused on the organization of effective computing processes on parallel-action computers. As an example, simulation results of the inverse problem of restoration of development history of thermal mantle plumes are given.     

Testing procedure and results of tests performed on a VVÉR-1000 fuel assembly fragment in a MIR channel for a maximum anticipated accident

The testing procedure and the results of tests performed on a 19-element fragment of a VVéR-1000 fuel assembly in the channel of a MIR reactor under conditions of the second and third stage of a maximum anticipated accident are presented. The state arising in the reactor core with an uncompensated leak arising in the first cooling loop when a pipeline with the maximum diameter bursts (large leak) is studied in the experiment. In each case study, superheated steam cools the top part of the fuel elements. The main goal of the tests is to obtain data on the distortion of fuel-element cladding under tensile stresses. __________ Translated from Atomnaya énergiya, Vol. 103, No. 5, pp. 286–291, November, 2007.     

Synchronization properties of two coupled multisection semiconductor lasers emitting chaotic light

We present numerical simulations describing the dynamics of two multisection semiconductor lasers emitting in a chaotic regime coupled in a master-slave configuration. By changing the current of the passive section of the master laser, we observe a change in the maximum correlation between the outputs of the two systems. These devices are promising candidates for on-off phase-shift keying encryption.     

Analysis of the dependence of the subthreshold swing and the threshold voltage on the substrate voltage of thin-film SOI MOSFETs. Extraction of the interface state densities

A detailed analysis for the variation of the subthreshold swing and the threshold voltage with the substrate voltage of thin film SOI MOSFETs is presented. An accurate model for the subthreshold swing, which emphasizes the optimum back surface regime and applied substrate voltage necessary to obtain the minimum swing, is developed. On the other hand, the modelling of the dependence of the threshold voltage on the substrate voltage is used in combination with the model of the swing in order to extract the interface state densities at both interfaces of the thin Si film.     

High-breakdown-voltage AlSbAs/InAs n-channel field-effecttransistors

InAs channel field-effect transistors of 1-μm gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs