Carrier multiplication in submicrometre pMOS transistors operated at cryogenic temperatures

The temperature and bias dependence of the carrier multiplication M(I/sub bulk//I/sub drain/) in submicrometre pMOS transistors has been characterised and studied over the temperature range of 30-300 K. In addition, a model which reproduces the bias dependence of M over the measured range of temperature can be extrapolated down to 4.2 K to predict the internal bulk potential and its related 'kink effect'. The agreement between data and the prediction of the model confirms that the gate voltage and temperature dependence of the mean free path plays the key role in determining the carrier multiplication characteristics of submicrometre pMOS transistors, operating in the temperature range of 4.2-300 K.<>     

Dynamic structure-soil-structure interaction by FEM and BEM

The dynamic interaction, through the underlying or surrounding soil, between three-dimensional structures has been investigated, by coupling finite and boundary elements. The structures are discretized by finite elements, and the infinite soil is represented by boundary elements. A harmonic force is applied on both mass-lumped structures and mass-distributed structures. On the basis of our numerical studies, we further indicate the effects of distance, direction of alignment between two foundations, bedrock, natural frequency of the system and the location of load on the dynamic responses of structure-soil-structure interaction systems.     

Comparative study of crystallization processes in Sb2Te3 films using laser and thermal annealing techniques

Adherent and pin-hole free amorphous Sb₂Te₃ thin films have been obtained by vacuum evaporation at substrate temperatures ≤25 °C. The films have been crystallized by thermal and laser annealing, and the crystallization processes monitored as a function of annealing temperature and laser scan speed. A comparative study of topography reveals disk-shaped crystallized areas in thermal crystallization and dendrite growth in the laser induced process. The crystallized films in both cases contain a single Sb₂Te₃ phase. Activation energy of 2 eV for crystallization, determined using differential scanning calorimetery indicates good room temperature stability of the amorphous states.     

New design of a spiral-screw conveyer

Translated from Khimicheskoe i Neftyanoe Mashinostroenie, No. 1, p. 25, January, 1992.     

Evaporators with hydrophobic heat-transfer agents

Translated from Khimicheskoe i Neftyanoe Mashinostroenie, No. 10, pp. 8–10, October, 1992.