Special features of manufacturing highly porous materials from silicon nitride,silicon oxynitride,and sialons

Results obtained in a study of factors that affect shaping and sintering of highly porous materials are presented. A technology providing highly porous silicon nitride materials that is based on shaping preliminarily fabricated pieces of thermoplastic slip makes it possible to use initial silicon powders of different dispersities. Highly porous materials can also be produced on the basis of sialons and exhibit a diminished thermal conductivity and a heat resistance at the level of similar silicon nitride materials.Translated from Ogneupory i Tekhnicheskaya Keramika, No. 11, pp. 8 – 13, November, 1996.     

De novo epileptic confusional status in a patient with cobalamin deficiency

A 80-year-old man with cobalamin deficiency and no history of epilepsy developed a partial complex epileptic confusional status (ECS) unresponsive to acute i.v. diazepam. Brain CT scan and MRI investigation ruled out a focal cerebral lesion. Therapy with high doses (10,000 micrograms i.m. daily) of cobalamin alone was started, and the patient fully recovered in the following 72-hour. Control EEGs repeatedly performed days and weeks later showed progressive disappearance of the frontal interictal spiking, while the patient was on monotherapy with cobalamin (5,000 micrograms i.m. weekly). A month later the patient unfortunately discontinued replacement therapy and 13 weeks later he developed a fatal convulsive epileptic status. To our knowledge the association of ECS and cobalamin deficiency has not been previously reported.     

Multiterminal light-emitting logic device electricallyreprogrammable between OR and NAND functions

A monolithic multiterminal logic device that functions both optically and electrically as an ORNAND gate, is demonstrated for the first time. The device, based on the real-space transfer of hot electrons into a complementary collector layer, has been implemented in an InGaAs/InAlAs/InGaAs heterostructure grown by molecular beam epitaxy. Excellent performance is obtained at room temperature. The collector current and the optical output power both exhibit the OR and the NAND functions of any two of the three input terminals, these functions being interchangeable by the voltage on the third terminal     

Transconductance and mobility of Si:B delta MOSFETs

Delta-doped MOSFETs have been fabricated in MBE-grown silicon using for the first time boron as the dopant within the delta layer. Current-voltage characteristics have been measured, and secondary ion mass spectrometry (SIMS) is used to confirm the location of the delta layer and the extent of layer broadening by diffusion during processing. Precise threshold voltages of the devices are difficult to determine since the devices (which all operate in depletion mode) take several volts to switch off. Transconductances of the devices have been measured, and it is shown how analysis of these results can yield estimates of the carrier mobility for transport along the delta layers despite the uncertainty in the threshold voltage. A clear transition is observed in the results which is attributed to the formation of a parasitic surface-channel field-effect transistor, providing conclusive evidence that the devices are conducting along a delta channel for part of the measured range of applied gate biases     

Application of the integral definition of the curl operator tonumerical solutions in electromagnetics

The definition of the curl operator in terms of an integral is shown to lead to a method for numerical solutions that facilitates the use of mixtures of cells having different shapes and different dielectric properties. The derivation is followed by examples for, waveguides, mixtures of different cells, and a method for increasing the accuracy when an equation is known for the field on the outer boundary. Thus, these results suggest that the formal definition of the curl operator has more than pedagogical value. This definition is taught in an undergraduate class at Florida International University     

Sensorless speed measurement using current harmonic spectralestimation in induction machine drives

This paper proposes a sensorless speed measurement scheme that improves the performance of transducerless induction machine drives, especially for low-frequency operation. Speed-related harmonics that arise from rotor slotting and eccentricity are analyzed using digital signal processing. These current harmonics exist at any nonzero speed and are independent of time-varying parameters, such as stator winding resistance. A spectral estimation technique combines multiple current harmonics to determine the rotor speed with more accuracy and less sensitivity to noise than analog filtering methods or the fast Fourier transform. An on-line initialization routine determines machine-specific parameters required for slot harmonic calculations. This speed detector, which has been verified at frequencies as low as 1 Hz, can provide robust, parameter-independent information for parameter tuning or as an input to a sensorless flux observer for a field-oriented drive. The performance of the algorithm is demonstrated over a wide range of inverter frequencies and load conditions     

Novel diterpenoid diacylglycerols from marine molluscs: potent morphogens and protein kinase C activators

Five novel 1,2-sn-diacylglycerols with diterpenoid acyl moieties in the sn-1 position were isolated and characterized, together with the corresponding 1,3-sn-diacylglycerols, from three species of dorid nudibranchs molluscs. Their potent activity as morphogens in vivo in the Hydra tentacle regeneration assay and their parallel activity as activators of rat brain protein kinase C (PKC) in vitro are reported here. Our findings promote the use of these compounds as useful molecular probes for both in vivo and in vitro studies on the participation of PKC in cell development.     

Room temperature characterization of Hg1-xCdxTe P-on-n heterostructure photodiodes

Measurements of 77K R_oA and 300K reverse bias dynamic impedance (R_dA) products at one volt reverse bias has been carried out to assess the degree of correlation of this figure of merit. Planar P-on-n heterostructures were grown on near lattice-matched CdZnTe substrates with Hg_1-xCd_xTe (0.20< x <0.30) by molecular beam epitaxy. These devices were passivated with CdTe and doped with indium and arsenic as n- and p-type dopants, respectively. Current-voltage characteristic of these devices exhibit thermally generated dark currents at small and modest reverse bias. We have observed that R_oA values of these long wavelength infrared P-on-n heterostructure photodiodes at 77K correlate with room temperature R_dA values. Diode arrays with high room temperature R_dA values at one volt reverse bias also have high R_oA values at 77K. Similarly, low R_dA values at room temperature indicate poor performance at 77K where deviation from diffusion current occurs at reverse bias of 0.2 to 1 volt at room temperature. The results presented here, for a small samples of devices, demonstrate that room temperature measurements of current-voltage characteristics to evaluate Hg_1-xCd_xTe (0.22< x <0.28) diode performance and array uniformity at lower temperatures can be used. This provides an acceptable criteria for further study at lower temperatures.     

Geochemical characteristics of the Yufuin outflow plume, Beppu hydrothermal system, Japan

Thermal water at Yufuin (Kyushu Island, Japan) is tapped through about 820 shallow wells and used mainly for hot-spring bathing purposes. Chemical and isotopic data for fluids from wells and fumaroles in Yufuin and Beppu indicate that the thermal activity at Yufuin represents a dilute, westward-flowing hydrothermal outflow plume from the Beppu hydrothermal system. Two other (eastward-flowing) outflow plumes have long been recognized at Beppu, but the Yufuin outflow plume is first recognized here. The Yufuin outflow plume is apparently a mixture of two end-member fluids: (1) deep high-temperature (250–300°C) fluid from the Beppu system having high chloride concentration (1400–1600 mg/L) and a δ¹⁸O value near −6.0%, and (2) meteoric water having low chloride concentration (≤7 mg/L) and a δ¹⁸O value near −9.2%.A permeable conduit for the vertical and lateral transport of deep fluid from the Beppu system is provided by the Yufuin Fault zone, which extends westward from the southern flank of Mt. Tsurumi volcano to the town of Yufuin. Stable isotope ratios and chloride concentrations for shallow groundwaters near the eastern end of the fault, at an elevation near 700 m, are consistent with those required for the low-chloride meteoric end-member of the Yufuin thermal waters. Recharge of this meteoric water, as well as mixing with the Beppu deep fluid, may occur along the Yufuin Fault. Enthalpy-chloride relations indicate additional conductive heating of the Yufuin waters, in the amount of 350–500 kJ/kg beyond that which can be accounted for by mixing between Beppu deep fluid and meteoric water. This could be a result of conductive heating with convection to a depth of 1–2 km. Estimates of the magnitude of the heat source for the Beppu hydrothermal system should take into account the heat being discharged at Yufuin.     

AC measurements of the minimum longitudinal resistance of a QHEsample from 10 Hz to 10 kHz

AC measurements of the longitudinal resistance, R_xx, of a quantum Hall effect (QHE) sample have been made in a frequency range from 10 Hz to 10 kHz. The results show no frequency effect on the minimum value of R_xx corresponding to the quantum numbers i=2 and i=4, within the measurement resolution of 0.5 mΩ. Therefore, the influence of frequency on the value of the quantized Hall resistance, R_H, should not exceed a few parts in 10⁹ . Some unwanted effects detected during the development of the resistance bridge have been pointed out