3D Investigation of 8-nm Tapered n-FinFET Model

The miniaturization has become a key word for advanced integrated circuits over the last few years. It is within this context that the fin field effect tra     

A practical Equivalent Electrical Circuit model for Proton Exchange Membrane Fuel Cell (PEMFC) systems

An alternative Equivalent Electrical Circuit for Proton Exchange Membrane Fuel Cells is modelled in this study. Both I–V characteristics and H₂ consumptions corresponding to generated power under load and no-load conditions are investigated. For this purpose, H₂ consumptions and I–V characteristics of three different sized PEMFCs are tested. There is a very good harmony between the model results and measured values (relative error %0.7, %6.4 and %2.5 for FC-A, FC-B and FC-C respectively). In the proposed model current passes only on parallel resistance and not on serial resistance at no-load condition. Thus, a FC with higher parallel resistance should be preferred. Another key output of this study is that based on the proposed model, performance comparison of FCs can be performed with the parameters defined in this work. Proposals made in this study can easily be used for performance analysis of FCs under for both steady state and transient analysis.     

Theoretical Strength of Borides and Quasibinary Boride Eutectics at High Temperatures

Powder Metallurgy and Metal Ceramics - The theoretical strength of LaB6 and MeB2 borides and a eutectic LaB6–TiB2 system is calculated with quasiharmonic approximation for uniaxial strain in...     

Viscosity of Fe90B x Si(10 − x) melts

High Temperature - The temperature dependences of the viscosity of liquid Fe90B x Si(10 − x) alloys are studied in the mode of heating and subsequent cooling. The temperature dependences of...     

An automated system based on cryogenic probe station for integrated studies of semiconductor light-emitting structures and wafers in the range of 15 to 475 K

An automated system for integrated electrophysical and optical studies of semiconductor nanoheterostructures, which operates in a wide temperature range from 15 to 475 K, is designed. The setup is intended to measure the temperature and frequency admittance and electroluminescence spectra of light-emitting diode and laser chips formed on substrates of diameter up to 50.2 mm, and the distribution of parameters over the wafer. The setup includes the closed-cycle helium cryogenic station, LCR meter, and temperature controller. The characterization results of nanoheterostructures with InGaN/GaN multiple quantum wells, which are used for creating highly efficient white and blue light-emitting diodes, are presented.