Film Formation in Binary Sol-Gel Systems

The film-forming capacity of binary systems containing Sb₂O₃, SnO₂, CeO₂, Y₂O₃, Nd₂O₃, Bi₂O₃, V₂O₅, ZnO, CuO, CdO, and Al₂O₃ are investigated. The best film-formers are Sb₂O₃ and SnO₂, whereas ZnO, CuO, CdO, and Al₂O₃ cannot produce films of optical quality. The rest of considered oxides do not impair the clarity of coatings when their molding content is 20 – 50%. A proportional dependence is established between the refractive index and the reflection coefficient of a film and the refractive indexes of oxides making parts of this film, as well as between the concentration of deposited FFS, the film-forming capacity of oxides, and the film thickness.     

Passive-Based Walking Robot

In this article, we presented our passive-based biped Denise. Using only two foot contact switches as sensors and simple on/off pneumatic muscle action, it walks at 0.4 m/s and can handle floor disturbances up to 6 mm (leg length is 0.7 m). Its simplicity, efficiency, and die natural look of its motions make it a promising lead for the development of commercially viable humanoid robots. The aim of this article is to provide other researchers enough details so that they can reproduce the work or use it as a basis for future research.     

In-Situ and Real-Time Investigation of Columnar-to-Equiaxed Transition in Metallic Alloy

In this article, we present a review of observations during Al-3.5 wt pct Ni alloy solidi.cation experiments performed at the European Synchrotron Radiation Facility (ESRF) in Grenoble. These experiments provide direct access to dynamical phenomena during columnar growth (initial transient and breakdown of a planar solid-liquid interface), and for the first time to the transition from columnar-to-equiaxed microstructure (nucleation ahead of a columnar front and blocking of a columnar front by an equiaxed microstructure) and fully equiaxed growth (propagation of an effective front). Based on these experimental observations, critical parameters such as columnar growth velocity variation during the transition or equiaxed-grain diameter are measured and discussed. This article is based on a presentation made in the symposium entitled “Solidi.cation Modeling and Microstructure Formation: In Honor of Prof. John Hunt,” which occurred March 13–15, 2006, during the TMS Spring Meeting in San Antonio, Texas, under the auspices of the TMS Materials Processing and Manufacturing Division, Solidification Committee.     

Radiation demineralised bone enhanced osteoinductive capacity after transplantation

Using a mediating alkyne gas during the radiation treatment prevents the degradation of natural and synthetic polysaccharides and proteins. The product has higher viscosity and is more elastic than the original material and, therefore, gives enhanced functionality. Protein, within demineralised bone, too can be modified to give enhanced osteoinductive capacity after transplantation. Thus new functionalities can be achieved from the new products produced in food and medical products.     

Multidimensional stability domain of special polynomial families

Consideration was given to the characteristic polynomials with special affine uncertainty. For this family, the stability domain in the parameter space was shown to be a union of polyhedra. For continuous-time and discrete-time systems, a simple method was proposed to single out the stability domain and determine the stability radius for different norms of uncertainty. Efficiency of this method was corroborated by examples.     

Solution-Processed n-Type Organic Field-Effect Transistors With High on /off Current Ratios Based on Fullerene Derivatives

Solution-processed n-type organic field-effect transistors (OFETs) based on the fullerene derivative {6}-1-(3-(2- thienylethoxycarbonyl)-propyl)-{5}-l-phenyl-[5,6]-C61 (TEPP) and phenyl-C61-butyric acid methyl ester (PCBM) in a multiring source/drain structure are reported. Devices with TEPP show high electron mobility up to 7.8 x 10^-2 cm²/Vs in the saturation regime for bottom-contact OFETs with Au S/D electrodes with a solution-processed fullerene derivative. The ON/OFF ratios reported in this letter, which are in the range of 10⁵ -10⁶, are among the highest values reported for such devices. This mobility is always higher compared to PCBM devices prepared in identical conditions. The mobility of TEPP and PCBM increased with increasing temperatures in the range of 100-300 K with activation energy of 78 and 113 meV, respectively, which suggests that the thermally activated hopping of electrons is dominant in TEPP.     

Thermal simulation for geometric optimization of metallizedpolypropylene film capacitors

In this paper, the authors use an analytical model to calculate the losses in the metallized polypropylene film capacitors. The model is validated experimentally for capacitors having the same capacitance but different geometry. For each group of capacitors, a temperature distribution in the roll is assumed with the aim of optimizing its thermal performance. It appears that the heating of a long capacitor is higher than that of an equivalent flat capacitor subjected to the same electric stresses     

Performance of space-time codes for a large number of antennas

We study the asymptotic behavior of space-time codes when the number of transmit and receive antennas grows to infinity. Specifically, we determine the behavior of pairwise error probabilities with maximum-likelihood (ML) decoding and with three types of receiver interfaces: the ML interface, the linear zero-forcing (ZF) interface, and the linear minimum-mean-square-error (MMSE) interface. Two situations are studied: when the number of receiving antennas grows to infinity while the number of transmitting antennas is finite, and when both numbers grow to infinity but their ratio remains constant. We show that with ML or linear interfaces the asymptotic performance of space-time codes is determined by the Euclidean distances between codewords. Moreover, with the two linear interfaces examined here the number r of receive antennas must be much larger than the number t of transmit antennas to avoid a sizeable loss of performance; on the other hand, when r ≫ t, the performance of these linear interfaces comes close to that of ML. The dependence of error probabilities on Euclidean distance is valid for intermediate signal-to-noise ratios (SNRs) even when the number of antennas is small. Simulations validate our theoretical findings, and show how asymptotic results may be substantially valid even in a nonasymptotic regime: thus, even for few antennas, off-the-shelf codes may outperform space-time codes designed ad hoc     

Tensile,creep, and low-cycle fatigue behavior of a cast γ-TiAl-based alloy for gas turbine applications

The influence of chemical composition on the microstructure of the γ-titanium aluminide alloy Ti-48Al-2W-0.5Si (at. pct) and the accompanying tensile, low-cycle fatigue, and creep properties has been evaluated. The study showed that small variations in chemical composition and casting procedures resulted in considerable variations in the microstructure, yielding vastly different mechanical properties. Low contents of aluminum and tungsten led to a coarse-grained lamellar (γ/α ₂) microstructure with high creep resistance. A composition close to the nominal one produced a duplex (γ+γ/α ₂) structure with favorable strength, ductility, and low-cycle fatigue properties. By controlling the solidification and cooling rates at casting, a pseudoduplex (PS-DP) microstructure with a unique combination of high strength and high fatigue and creep resistance can be obtained. These unique properties can be explained by the diffuse boundaries between the relatively small γ grains and the neighboring lamellar colonies, combined with semicoherent interfaces between the γ and α ₂ phases. At tensile and low-cycle fatigue loading, these boundaries act like high-angle boundaries, producing a virtually fine-grained material promoting strength, whereas at creep loading, grain-boundary sliding is hindered in the semicoherent interfaces leading to high creep resistance.