Mathematical Modeling of Thermomechanical Processes under Intense Thermal Effect

Mathematical models of thermomechanical processes which are based on the laws of rational thermodynamics of irreversible processes are treated. Singular features of the unsteady-state behavior of a continuous medium are demonstrated within different models, such as a medium with internal parameters of state, a medium with memory, and a medium of the velocity type.     

Development and commissioning of decision support tools for sewerage management.

Managing sewerage systems is a highly complex task due to the dynamic nature of the facilities. Their performance strongly depends on the know-how applied by the operators. In order to define optimal operational settings, two decision support tools based on mathematical models have been developed. Moreover, easy-to-use interfaces have been created as well, aiding operators who presumably do not have the necessary skills to use modelling software. The two developed programs simulate the behaviour of both wastewater treatment plants (WWTP) and sewer network systems, respectively. They have essentially the same structure, including raw data management and statistical analysis, a simulation layer using the application programming interface of the applied software and a layer responsible for the representation of the obtained results. Four user modes are provided in the two software including the simulation of historical data using the applied and novel operational settings, as well as modes concerning prediction of possible operation periods and updates. Concerning the WWTP software, it was successfully installed in Nantes (France) in June 2004. Moreover, the one managing sewer networks has been deployed in Saint-Malo (France) in January 2005. This paper presents the structure of the developed software and the first results obtained during the commissioning phase.     

Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes

The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.     

LiNbO3 optical waveguides formed in a new proton source

Proton-exchanged planar waveguides have been fabricated on Z-cut and X-cut lithium niobate crystals by using a new proton source formed by a mixture of benzoic and adipic acids. Waveguide index profiles and optical characteristics have been obtained at different values of the adipic-benzoic acid concentration ratio. The samples have been structurally characterized by Raman and infrared (IR) absorption spectroscopy and double-crystal X-ray diffraction. Good quality samples have been fabricated by using 30 mol% ratio dilution, showing very low scattering levels (<0.1 dB/cm), relatively high electrooptic coefficient (r₃₃=0.88 pm/V), and low relative percentage of interstitial protons (26%). The main factor limiting the waveguide optical properties is the substitutional-interstitial proton ratio, which can be easily controlled to produce good quality waveguides. A demonstration of the repeatability of the exchange process in the acid mixture is also provided     

A base-band NDS electrode configuration for HACT devices

Heterostructure Acoustic Charge Transport (HACT) devices have been fabricated with a new nondestructive sense (NDS) electrode structure that provides for the recovery of base-band signals without the use of an integrating capacitor. This electrode structure provides an output signal comprising an RF carrier at the SAW frequency, amplitude modulated by the sampled input signal which has been delayed by a period proportional to the output electrodes distance from the input diode. The output of the NDS electrode structure is subsequently demodulated to provide the base-band signal     

The electrostatic problem for the SAW interdigital transducers inan external electric field. II. Periodic structures

For pt.I see ibid., vol.43, no.6, pp.1150-9 (1996). An exact solution of the electrostatic problem for calculating the surface charge and electric field distributions in an arbitrary periodic interdigital transducer (IDT) is given using the results of our companion paper. An arbitrary external electric field may be specified along the electrode structure with the unit cell containing one electrode, or several electrodes, of different widths. The potentials of the electrodes that may be specified are also arbitrary. It is shown that in the case without an external field, the solution includes all the known results as special cases. The case of shorted electrodes in the external electric field is investigated in detail. The surface charge and electric field distributions are calculated for a spatially harmonic external field with an arbitrary wavenumber. The results of the calculations are represented graphically for various ratios between the period of the electrode structure and the wavelength of the external field for the case of a unit cell containing one or two electrodes of different widths     

Thermal expansion of semiconductor materials

The thermal expansion of tellurides of germanium, bismuth, and intermetallic compounds is investigated over the temperature range 293-973 K.Belarusian Agricultural Technical University, Minsk. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 66, No. 5, pp. 612–616, May 1994.