Hall effect characterization of LPE HgCdTe P/n heterojunctions

The field and temperature dependence of the Hall coefficient has been used to simultaneously extract information about the p and n layers in very long wave length infrared P/n HgCdTe heterojunctions. The field dependence allows the effects of high mobility electrons to be separated from those of low mobility holes. The higher the magnetic field, the higher the sensitivity to the parameters of the P layer. For a maximum magnetic field of 8000 gauss, the hole sheet concentration must be at least five times the electron sheet concentration to obtain accurate results for the P layer. This criterion is satisfied for typical liquid phase epitaxy (LPE) heterostructures. The analysis determines the hole sheet resistance (concentration times mobility), rather than the hole concentration or mobility separately. Independent knowledge of the P layer thickness and the relationship between hole concentration and resistivity are needed to convert the Hall measurement results to hole concentrations. Analysis of the field-dependent Hall data is complicated by the finding that at least three electrons of different mobilities are needed to fit the field dependence of the Hall coefficient in n-type LPE HgCdTe layers. These results are consistent with previous conclusions that electrons with different mobilities are needed to model bulk n-HgCdTe, and with a range of mobilities in the graded composition interface between the LPE layer and CdTe substrate. Consistent results are obtained for the concentrations and mobilities of the three types of electrons in the n-HgCdTe layer with and without the P layer present. N and P type carrier concentrations are also consistent with dopant concentrations measured by secondary ion mass spectroscopy.     

Experimental validation of a numerical model for heat transfer in vacuum glazing

Flat vacuum glazings consisting of a narrow evacuated space between two glass panes separated by an array of small support pillars have been fabricated. A guarded hot box calorimeter was designed and constructed to measure their heat transfer coefficients. Experimental measurements of temperatures and rates of heat transfer were found to be in very good agreement with those predicted using a developed finite element model. A method for determining the heat transfer coefficient of the evacuated gap has been established and comparisons are made between the measured and predicted glass surface temperature profiles of the exposed glass area and the heat transfer coefficients of the total glazing system in order to validated the model.     

Impurity study of CdZnTe substrates used for LPE HgCdTe

Impurites were tracked from raw material purification through to CdZnTe processing in an effort to identify the sources of elements which impact on IR photodetector performance. Chemical analyses by GDMS and ZCGFAA effectively showed the levels of impurities introduced into CdZnTe substrate material from the manufacturing processes. A new purification process (ISDZR) for raw materials was developed, resulting in improved CdZnTe substrate purity. Substrate CU contamination was found to have detrimental effects on LPE layer and device electrical properties for lightly doped HgCdTe.     

Composition and thickness control of thin LPE HgCdTe layers using x-ray diffraction

Double-axis x-ray rocking curve measurements have been used to nondestructively characterize the composition profile of HgCdTe heterojunction photodiode structures grown by liquid phase epitaxy (LPE). In particular, the thickness and composition profile of the thin graded-composition cap layer are determined through an empirical correlation between rocking curve parameters and composition profiles measured by SIMS. Spatial maps of cap layer thickness and composition are generated from automated measurements of x-ray rocking curves across a wafer. X-ray mapping has been instrumental in improving the spatial uniformity of cap layers and in maintaining control of the growth process in Hg-rich LPE dipping reactors.     

Magnetic properties of Co- and Mn-implanted BaTiO3, SrTiO3 and KTaO3

Implantation of Co or Mn into single-crystal BaTiO₃(K), SrTiO₃ or KTaO₃(Ca), followed by annealing at 700 °C, produced ferromagnetic behavior over a broad range of transition metal concentrations. For BaTiO₃, both Co and Mn implantation produced magnetic ordering temperatures near 300 K with coercivities 70 Oe. The M–T plots showed either a near-linear decrease of magnetization with increasing temperature for Co and a non-Brillouin shaped curve for Mn. No secondary phases were detected by high-resolution X-ray diffraction. The same basic trends were observed for both SrTiO₃ and KTaO₃, with the exception that at high Mn concentrations (5 at.%) the SrTiO₃ was no longer ferromagnetic. Our results are consistent with recent reports of room temperature ferromagnetism in other perovskite systems (e.g. LaBaMnO₃) and theoretical predictions for transition metal doping of BaTiO₃ [Nakayama et al., Jap. J. Appl. Phys. 40 (2001) L1355].     

MOVPE growth of HgCdTe for high performance 3–5 µm photodiodes operating at 100–180K

New results are reported on the growth of high performance medium wavelength infrared (3–5 μm) (MWIR) HgCdTe photodiodes in the three-layer P-n-N configuration. The detector structures were grown in situ by metalorganic vapor phase epitaxy (MOVPE) on (211)B oriented CdZnTe substrates. The mobilities of the single n-type layers with x-values of ∼0.30 are in the range of (3–4.5)×10⁴ cm²/V-s at 80K. The lifetimes on unpassivated films range from 1–5 and 4–10 μs at 80 and 180K, respectively, which are within a factor of two or less of the lifetimes calculated for Auger-1 and radiative recombination. The P-n-N films were processed into variable-area backside-illuminated diagnostic arrays and tested for quantum efficiency, spectral response, R_DA, I–V curves and 1/f noise in the 120–180K range. The internal one-dimensional quantum efficiencies are in the range of 85–100%. The optical collection lengths are typically ∼25 μm. I–V curves showed that diffusion current is the dominant junction current mechanism for temperatures ≥100K. R₀A values are at the one-dimensional limit for n-side diffusion currents over the 100–180K range. 1/f noise was measured to be very low at 120K and is the same as that measured in similarly processed arrays from recent LPE grown P-on-N heterojunctions. The results demonstrate that MOVPE growth can be used for large area, high performance MWIR HgCdTe detector arrays operating in the 120–180K temperature range.     

Advances in composition control for 16 µm LPE P-on-n HgCdTe heterojunction photodiodes for remote sensing applications at 60K

With good composition control in both p-type cap and n-type base LPE layers, it is possible to make barrier-free two-layer P-on-n HgCdTe heterojunction photodiodes with very long cutoff wavelengths. Diode arrays with good R_oA operability, good quantum efficiency, and low 1/f noise at 60K have been demonstrated at cutoff wavelengths to 16.3μm. The diode performance continues to improve at lower temperatures, following a diffusion-current trend to at least 35K. Measured R_oA values of 2×10⁵ ohm-cm² for an 18 μm cutoff at 35K are the highest reported at this very long wavelength. A simple defect model applied to the area dependence of R_oA at 40K implied a defect areal density of 3×10⁴ cm⁻² and a defect impedance of 3×10⁶ ohm.     

使用Xilinx FPGA产品加速数据包处理

下一代网络架构是以10千兆以太网成熟发展和工业面向40千兆及100千兆发展为兴起的.聚集的网络为可升级的开放平台处理数据流创造了新挑战.在聚集的下一代架构基础中,常见部件包括高性能的兆兆位转换和在应用层持续增长的复杂性和迅速成长的应用中能够处理几十千兆数据流的可编程的内容处理器.CloudShield已经设计出新的一系列可编程数据包处理器,能够检验、分类,调试和复制数据包,集成与应用层的动态交互.     

Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO

Wet etch rates at 25°C for Zn_0.9Mg_0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min⁻¹ with HCl/H₂O (5×10⁻³−2×10⁻² M) and 120–300 nm · min⁻¹ with H₃PO₄/H₂O (5×10⁻³−2×10⁻² M). Both of these dilute mixtures exhibited diffusion-limited etching, with thermal activation energies of 2–3 kCal · mol⁻¹. By sharp contrast, the etch rates for ZnO also grown on sapphire by PLD were much slower in similar solutions, with rates of 1.2–50 nm · min⁻¹ in HCl/H₂O (0.01–1.2 M) and 12–54 nm · min⁻¹ in H₃PO₄/H₂O (0.02–0.15 M). The etching was reaction limited over the temperature range 25–75°C, with activation energies close to 6 kCal · mol⁻¹. The resulting selectivity of Zn_0.9Mg_0.1O over ZnO can be a high as ∼400 with HCl and ∼30 with H₃PO₄.     

AntiGroupWare and Second Messenger

Decision-making in groups has great potential due to the possibilities for pooling ideas and sharing knowledge, but also great drawbacks due to the social pressures inherent in these situations that can limit free exchange of these ideas and knowledge. This paper presents two technology-based approaches to improving group decision-making, Second Messenger and AntiGroupWare. Second Messenger — a system that encourages groups to change their interaction styles during meetings — is designed to improve meetings, while AntiGroupWare — an on-line polling system that allows companies to gather information through flexible, iterative polling of its employees — is designed to avoid them altogether.