Rupture of pectoralis major muscle: operative treatment of an uncommon sport injury

Rupture of the pectoralis major muscle in an athlete is rare, but is said to be common in weight lifters. The muscle usually ruptures at the musculotendinous junction during forceful contraction of the muscle in adduction, forward flexion and internal rotation of the arm. We describe an athlete who suffered such a major tear during a rugby game. It was treated surgically and after adequate rehabilitation, athletic activities were resumed.     

A role for HLA-DO as a co-chaperone of HLA-DM in peptide loading of MHC class II molecules

In B cells, the non-classical human leukocyte antigens HLA-DO (DO) and HLA-DM (DM) are residents of lysosome-like organelles where they form tight complexes. DM catalyzes the removal of invariant chain-derived CLIP peptides from classical major histocompatibility complex (MHC) class II molecules, chaperones them until peptides are available for loading, and functions as a peptide editor. Here we show that DO preferentially promotes loading of MHC class II molecules that are dependent on the chaperone activity of DM, and influences editing in a positive way for some peptides and negatively for others. In acidic compartments, DO is engaged in DR-DM-DO complexes whose physiological relevance is indicated by the observation that at lysosomal pH DM-DO stabilizes empty class II molecules more efficiently than DM alone. Moreover, expression of DO in a melanoma cell line favors loading of high-stability peptides. Thus, DO appears to act as a co-chaperone of DM, thereby controlling the quality of antigenic peptides to be presented on the cell surface.     

Cholesterol biosynthesis, peroxisomes and peroxisomal disorders: mevalonate kinase is not only deficient in Zellweger syndrome but also in rhizomelic chondrodysplasia punctata

We examined the inhibitory potency of F-1394 ((1S,2S)-2-[3-(2,2-dimethylpropyl)-3-nonylureido]cyclohexane -1-yl 3-[(4R)-N-(2,2,5,5-tetramethyl-1,3-dioxane-4-carbonyl)amino]propionate), an acyl-CoA:cholesterol acyltransferase (ACAT) inhibitor, on ACAT activity and its hypolipidemic effect. F-1394 inhibited whole-cell ACAT activity in HepG2 cells with an IC50 value of 42 nM. The potency of F-1394 was greater than that of the five other ACAT inhibitors tested (YM-17E, CI-976, 57-118, CL-277,082 and DL-melinamide). In rats made hyperlipidemic by Triton WR-1339, F-1394 caused a reduction in the hepatic secretion rate of cholesterol. These data suggest that inhibition of hepatic ACAT activity helps to reduce very low density lipoprotein secretion from the liver into the circulation.     

Hydrogen effects on the tensile properties of 21-6-9 stainless steel

The effect of hydrogen on the mechanical properties of a series of nineteen experimental heats of 21-6-9 stainless steel was investigated. The nineteen material groups covered a variety of forging processes, strength levels, grain sizes, and microstructures. The data show that absorbed hydrogen acts as an interstitial strengthener which increases the flow stress of 21-6-9 similar to the effects of carbon, nitrogen, and other interstitial atoms. The true stress for tensile instability was observed to be ∼1130 MPa for both uncharged and hydrogen charged specimens and appeared to be independent of process variables. Thermal charging and/or tensile testing in high pressure hydrogen indicates this austenitic stainless steel is susceptible to hydrogen-induced cracking at grain boundaries, slip bands, and other interfaces. A lack of hydrogen-induced effects at true stresses below 1100 MPa indicates a lower limit for the hydrogen-induced reduction in interfacial strength. Above a true stress of 1100 MPa the extent of hydrogen induced reductions in interfacial strength is dependent on hydrogen concentration and increases as the hydrogen concentration increases. These observations are discussed in terms of several proposed hydrogen embrittlement theories.     

Calculation of I/V characteristics for ion-implanted GaAs MESFETs

The DC characteristics of an ion-implanted MESFET have been calculated from theoretical and measured carrier concentration profiles. The calculation allows the determination of characteristics for planar or recessed gate structures and shows good agreement with experimental devices.     

Ion implantation of GaAs integrated circuits

The conditions required for the fabrication of low pinch-off voltage MESFETs by ion implantation have been established. Calculation of the device characteristics from measured carrier concentration profiles has shown that of Vp of -1.5V is best achieved using low implant energies together with ion doses of 2 × 10¹² cm^?2. Characterisation of the implant and annealing conditions has enabled the implanted dose to be corrected for the activation after annealing. Measurement of the processed devices has shown the variation in saturation current to be as low as 3 mA over 75% of the wafer area, showing suitability for use in logic circuit fabrication.