Coarse filters for shape matching

This article describes the coarse shape filters that support the 3D, Internet-based search engine ShapeSifter, which aims to locate parts already in production that have a shape similar to a desired new part. The search engine analyzes the target model's shape characteristics and performs a similarity match on the database's contents. Our main challenge is identifying shape metrics that produce effective characterizations of 3D models for similarity comparison. We focus on using three novel convex hull-based indices to carry out a preliminary coarse filtering of candidates prior to more detailed analysis. We also describe the crucial role played by two databases of benchmark objects. Unlike other shape-matching systems, we chose ShapeSifter's architecture (multistep query), 3D representation (triangulated mesh), and implementation (Java3D) to allow deployment online once it matures     

Effect of misalignment on electrical characteristics of ACF joints for flip chip on flex applications

The effect of misalignment on the electrical properties of anisotropic conductive film (ACF) joints is investigated in this work. It is found that along with the increase of misalignment, the connection resistance of ACF joints increases. When the misalignment in x-direction is less than 5 μm, the increase rate of connection resistance is quite large. Then, along with the severity of misalignment, the increase rate becomes smaller. Finally, when the misalignment is close to 20 μm, the increase rate rises again. The Holm's electric contact theory is used for understanding the connection resistance variation. On the other hand, with the increase of misalignment in x-direction, the insulation resistance between ACF joints decreases. If the misalignment exceeded 10 μm, the decrease is prominent for the Ni particle ACF joints. This phenomenon can be explained by the effect of dielectric damage of the epoxy.Computer programs are also developed to calculate the variation of the probability of open and shorting after misalignment and predicate the maximum misalignment tolerance. The results show that the open and shorting probability increase abruptly after misalignment. On the view of pad parameters, the open probability is mainly related to the pad area, while the pads gap is critical to the shorting probability. Large pads gap (small pad width) can reduce the shorting probability obviously. On the other hand, enlarging the pad area by increasing pad length decreases the open probability significantly. So comparing to square shape pad, rectangle shape pad can reduce the failure probability greatly.     

Eliminating memory for fragmentation within partitionable SIMD/SPMDmachines

Efficient data layout is an important aspect of the compilation process. A model for the creation of perfect memory maps for large-scale parallel machines capable of user-controlled partitionable single-instruction-multiple data/single-program-multiple data (SIMD/SPMD) operation is developed. The term perfect implies that no memory fragmentation occurs and ensures that the memory map size is kept to a minimum. A major constraint on solving this problem is based on the single program nature of both the SIMD and SPMD modes of parallelism. It is assumed that all processors within the same submachine used identical addresses to access corresponding data items in each of their local memories. Necessary and sufficient conditions are derived for being able to create perfect memory maps, and results are applied to several partitionable interconnection networks     

IEEE Richard Harold Kaufmann Award Call for Nominations

This letter further discusses the difference between different definitions of voltage unbalance. Contrary to an earlier letter (see P. Pillay et al., ibid., vol.5, p.50-1, 2001), it is concluded that different definitions may give significantly different results. The two IEEE definitions that were not discussed in the earlier letter give different results and both deviate significantly from the true value (ratio of negative, and positive-sequence voltage) when a zero-sequence component is present.