Switching to photonics

The use of hardware that exploits the interplay of photons and electrons to switch voice, data, and video is discussed. The two directions being taken by current research-guided-wave and free-space photonics-are examined. Photonic time-slot interchanges are described. Multidivisional fabrics, based on a combination of space-division and time-division multiplexing, are considered, as is the wavelength-division-based photonic packet switch, another kind of multidimensional fabric. The use of self-electrooptic effect devices, (SEEDs) is discussed     

The static and dynamic characteristics of single and multiplephase-shifted DFB laser structures

The influence of longitudinal mode spatial hole burning (LMSHB) on the performance of distributed feedback (DFB) laser structures is examined in detail. A comprehensive model has been used to interpret the experimental results and to construct a theoretical framework that was utilized to develop more advanced device designs. An increasing side mode intensity with output power, movement of the lasing mode relative to the stopband, and curvature of the light-current characteristic at low power can all be manifestations of the influence of LMSHB on the static device performance. The dynamic behavior can also be affected, with extended wavelength chirp and amplitude patterning effects on the timescale of the effective carrier recombination time being particularly important     

Spectral characteristics of vertical-cavity surface-emitting lasers with external optical feedback

The measurement of the effects of external optical feedback on the spectra of VCSELs (vertical-cavity surface-emitting lasers) is reported. It is surprising that VCSELs have a sensitivity to optical feedback comparable to that of conventional edge-emitting lasers such as DFBs despite their significantly different structures. This is because the extremely short cavity length of VCSELs negates the effects of their highly reflective output mirrors. As in edge-emitting lasers, VCSELs exhibit well-defined regimes of feedback effects in their spectra. Since optical isolators cannot be easily applied to VCSELs due to their array structure, these lasers may be most useful in applications which are not sensitive to the spectral qualities of the light source.<>     

Inhibitory Effect of some carbazides on corrosion of aluminium in hydrochloric acid and sodium hydroxide solutions

The dissolution of aluminium in hydrochloric acid and sodium hydroxide solutions in the presence of semicarbazide, thiosemicarbazide and sym.diphenylcarbazide as corrosion inhibitors has been studied using thermometric, weight-loss and polarization methods. The three methods gave consistent results. The higher inhibition efficiency of these compounds in acidic than in alkaline madia may be due to the less negative potential of aluminium in hydrochloric acid solution, favouring adsorption of the additive. The adsorption of these compounds were found to obey Frumkin adsorption isotherm. Cathodic polarization measurements showed that these compounds are cathodic inhibitors and their adsorption in the double layer does not change the mechanism of the hydrogen evolution reaction. The results are analysed in terms of both molecular and cationic adsorption.     

First-principles study of the tensile and fracture of the Al/TiN interface

Employing the density functional theory, we investigate the tensile and fracture processes of the Al/TiN(0 0 1) interface. The simulation presents directly the strain–stress relationship, the ideal tensile strength and the process of bond breaking of the system. Through the analysis of deformation, we find that the softer Al layers deform larger than the harder TiN layers during the tensile process. And fracture occurs between the interface and the sub-interface Al layers. In addition, the results show that during the tensile process, the ripple of the interfacial TiN layer decreases gradually with the increment of the strain. Charge transfer was detected from the Al to TiN layers near the interface area during the tensile process by means of charge density and density of states analyses. The charge transfer affects the fracture process. Compared to our previous study of the Al/TiN(1 1 1) interface, the Al/TiN(0 0 1) interface has smaller work of adhesion and larger tensile strength than the Al/TiN(1 1 1) interface. Our investigation shows that the fractures of the Al/TiN(0 0 1) and (1 1 1) interface systems both happen in the Al layers near the interface.     

Preparation and characterization of high molecular weight poly(hydroxy ethers) with unusually high glass transition temperatures

A series of novel poly(hydroxy ethers) have been prepared via polymerization of the diglycidyl ethers of bisphenol-A ( 4 ), 4,4 ′-tribromotetramethylbiphenol ( 6a ), and 4,4 ′-tetrabromotetramethylbiphenol ( 6b ) with a variety of rigid diols in an effort to systematically modify structural features of the phenoxy repeat unit in order to control the torsional mobility of polymer backbones and produce materials with softening temperatures higher than are typical for the class. The resulting poly(hydroxy ethers) displyed glass transition temperatures ranging from 109 to 242°C. There of the polymers were characterized with respect to tensile and impact properties and were compared to the polymer sythesized from bisphenol-A ( 1 ) and bisphenol-A diglycidyl ether ( 4 ).     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

A 6-ns ECL 100 K I/O and 8-ns 3.3-V TTL I/O 4-Mb BiCMOS SRAM

The authors report a 4 M word×1 b/1 M word×4 b BiCMOS SRAM that can be metal mask programmed as either a 6-ns access time for an ECL 100 K I/O interface to an 8-ns access time for a 3.3-V TTL I/O interface. Die size is 18.87 mm×8.77 mm. Memory cell size is 5.8 μm×3.2 μm. In order to achieve such high-speed address access times the following technologies were developed: (1) a BiCMOS level converter that directly connects the ECL signal level to the CMOS level; (2) a high-speed BiCMOS circuit with low threshold voltage nMOSFETs; (3) a design method for determining the optimum number of decoder gate stages and the optimum size of gate transistors; (4) high-speed bipolar sensing circuits used at 3.3-V supply voltage; and (5) 0.55-μm BiCMOS process technology with a triple-well structure