首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   243272篇
  免费   3150篇
  国内免费   1241篇
电工技术   4829篇
综合类   264篇
化学工业   35411篇
金属工艺   10861篇
机械仪表   7066篇
建筑科学   6238篇
矿业工程   481篇
能源动力   6273篇
轻工业   24147篇
水利工程   1836篇
石油天然气   1335篇
武器工业   3篇
无线电   31035篇
一般工业技术   44878篇
冶金工业   50106篇
原子能技术   3860篇
自动化技术   19040篇
  2021年   1564篇
  2019年   1424篇
  2018年   2321篇
  2017年   2223篇
  2016年   2444篇
  2015年   1907篇
  2014年   3159篇
  2013年   10793篇
  2012年   5449篇
  2011年   7786篇
  2010年   6284篇
  2009年   6962篇
  2008年   7558篇
  2007年   7658篇
  2006年   7031篇
  2005年   6519篇
  2004年   6244篇
  2003年   6261篇
  2002年   6239篇
  2001年   6371篇
  2000年   5801篇
  1999年   6417篇
  1998年   16558篇
  1997年   11597篇
  1996年   8948篇
  1995年   6689篇
  1994年   5907篇
  1993年   5727篇
  1992年   4051篇
  1991年   3994篇
  1990年   3582篇
  1989年   3504篇
  1988年   3440篇
  1987年   2907篇
  1986年   2842篇
  1985年   3413篇
  1984年   3050篇
  1983年   2743篇
  1982年   2547篇
  1981年   2568篇
  1980年   2430篇
  1979年   2271篇
  1978年   2235篇
  1977年   2808篇
  1976年   4171篇
  1975年   1899篇
  1974年   1795篇
  1973年   1783篇
  1972年   1460篇
  1971年   1317篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
131.
The damage imposed on SiO x deposited nylon 6 films as a result of abrasion with a cotton cloth and Gelboflex testing was examined by evaluating the rate at which copper plates, which were enveloped by the damaged films, were corroded by H2S. Abrasion with a cotton cloth caused some micro-cracking of the SiO x layer and the permeation rate of H2S approached that of the uncoated nylon 6 film. Damage to the SiO x layer by twisting and crushing progressed gradually with the number of Gelboflex test cycles and correspondingly the corrosion rate of the copper plates increased. Comparison of the corrosion rates of the copper plates kept in the pouches made of various commercial films with those obtained for the damaged SiO x deposited nylon 6 films showed a clear relationship between the H2 permeation rate of the films and the corrosion rate of the copper plates by H2S.  相似文献   
132.
133.
134.
135.
A 1 V switched-capacitor (SC) bandpass sigma-delta (/spl Sigma//spl Delta/) modulator is realized using a high-speed switched-opamp (SO) technique with a sampling frequency of up to 50 MHz, which is improved ten times more than prior 1 V SO designs and comparable to the performance of the state-of-the-art SC circuits that operate at much higher supply voltages. On the system level, a fast-settling double-sampling SC biquadratic filter architecture is proposed to achieve high-speed operation. A low-voltage double-sampling finite-gain-compensation technique is employed to realize a high-resolution /spl Sigma//spl Delta/ modulator using only low-DC-gain opamps to maximize the speed and to reduce power dissipation. On the circuit level, a fast-switching methodology is proposed for the design of the switchable opamps to achieve a switching frequency up to 50 MHz. Implemented in a 0.35-/spl mu/m CMOS process (V/sub TP/=0.82 V and V/sub TN/=0.65 V) and at 1 V supply, the modulator achieves a measured peak signal-to-noise-and-distortion ratio (SNDR) of 42.3 dB at 10.7 MHz with a signal bandwidth of 200 kHz, while dissipating 12 mW and occupying a chip area of 1.3 mm/sup 2/.  相似文献   
136.
Crosstalk between microstrip transmission lines   总被引:1,自引:0,他引:1  
Methods for prediction of crosstalk between microstrip transmission lines are reviewed and simplified for the weak-coupling case. Classical coupled transmission line theory is used for uniform lines, and potential and induced EMF methods are used for crosstalk between nonuniform lines. It is shown that the potential method is equivalent to classical coupled transmission line theory for the case of uniform lines. An experiment was performed for uniform coupled microstrip lines for frequencies from 50 MHz to 5 GHz, and good agreement between theory and measurement was obtained for both near- and far-end crosstalk  相似文献   
137.
Efficient numerical solution techniques have been developed and used to examine the electromagnetic fields that can be developed in the working volume of the CW Ellipticus antenna operated at frequencies from 100 kHz to 1 GHz. An exponentially tapered transition section is designed to obtain the desired illumination pattern in the working volume. The input transition section is needed for impedance matching and to drive efficiently the Ellipticus antenna. A parametric study is performed to ascertain the performance of the Ellipticus antenna for frequencies up to 1 GHz  相似文献   
138.
Multifilament Ag-sheathed BiPbSrCaCuO (2223) superconducting tapes containing 49 filaments were fabricated by the powder-in-tube route and the roll-anneal process. The transport critical current densityJ c was 1.3×104 A cm–2 at 77 K and 7×104 A cm–2 at 4.2 K in self-field. A 12-m-long tape was used to construct superconducting solenoids (50, 28, and 14 mm internal diameters) generating dc fields 380–1070 G at 4.2 K. Measurements of the variation ofJ c with field (0–1.6 T) and bend strain (0–5%) are used to explain the performance of the solenoids. The critical bend strain of tapes was about 1.5%.  相似文献   
139.
A therapist's theoretical orientation is likely to influence every facet of the therapeutic process. We explore the relationship of therapeutic orientation and self-monitoring style. To test the hypothesis that high self-monitors would be more eclectic than low self-monitors, we surveyed 30 intake therapists at a child guidance center. Results supported the hypothesis; those frequently using more than one orientation had higher self-monitoring scores. Furthermore, self-monitoring correlated negatively with psychoanalytic endorsement, but in a positive direction with behavioral, systems and eclectic endorsements. Results are discussed in terms of training needs of those differing in self-monitoring style. (PsycINFO Database Record (c) 2010 APA, all rights reserved)  相似文献   
140.
This paper presents a high-speed, small-area circuit specifically designed to identify the levels in the read out operation of a flash multilevel memory. The circuit is based on the analog computation of the Euclidean distance between the current read out from a memory cell and the reference currents that represent the different logic levels. An experimental version of the circuit has been integrated in a standard double-metal 0.7-μm CMOS process with a die area of only 140×100 μm2. Operating under a 5-V power supply, this circuit identifies the read-out current of a memory cell, and associates it with the appropriate logic level in 9 ns  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号