Changes in the gaseous H2S barrier properties of damaged silicate coated nylon 6 films

The damage imposed on SiO _x deposited nylon 6 films as a result of abrasion with a cotton cloth and Gelboflex testing was examined by evaluating the rate at which copper plates, which were enveloped by the damaged films, were corroded by H₂S. Abrasion with a cotton cloth caused some micro-cracking of the SiO _x layer and the permeation rate of H₂S approached that of the uncoated nylon 6 film. Damage to the SiO _x layer by twisting and crushing progressed gradually with the number of Gelboflex test cycles and correspondingly the corrosion rate of the copper plates increased. Comparison of the corrosion rates of the copper plates kept in the pouches made of various commercial films with those obtained for the damaged SiO _x deposited nylon 6 films showed a clear relationship between the H₂ permeation rate of the films and the corrosion rate of the copper plates by H₂S.     

A three-dimensional FE analysis of large deformations for impact loadings using tetrahedral elements

 A three-dimensional dynamic program for the anaysis of large deformations in contact-penetration problems is developed using the finite element Lagrangian method with explicit time integration. By incorporating a tetrahedral element, which allows a single-point integration without a special hourglass control scheme, this program can be more effective to the present problem. The position code algorithm is used to search contact surface. Eroding surfaces are also considered. The defense node algorithm was slightly modified for the calculation of contact forces. A study of obliquity effects on metallic plate perforation and ricochet processes in thin plates impacted by a sphere was conducted. It is well simulated that on separation of two parts of the sphere, the portion still within the crater tends to perforate, while the portion in contact with the plate surface ricochets. This deformation pattern is observed in experiments, especially at high obliquities. A long rod that impacts an oblique steel plate at high impact velocity was also simulated in order to study the dynamics of the rod caused by the three dimensional asymmetric contact. The agreement between simulated and experimental results is quite good. Fracture phenomena occuring at high obliquity deserves further investigations. Received: 20 February 2002 / Accepted: 20 September 2002     

Natural convection on a thin vertical cylinder moving in a high-porosity ambient medium

An analysis has been performed to study the natural convection flow over a thin vertical cylinder which is moving with a constant velocity in a non-Darcy high-porosity ambient medium. Both constant wall temperature and constant heat flux conditions have been considered. The coupled non-linear parabolic partial differential equations have been solved numerically by using an implicit finite-difference scheme. The heat transfer is found to be significantly affected by the inertia and porosity parameters, and the Prandtl number, whereas the skin friction is weakly affected. The heat transfer for the constant heat flux case is more than that of the constant wall temperature case and this difference increases with the Prandtl number. The heat transfer increases with the buoyancy force, but the skin friction is slightly reduced.     

Retrograde Amnesia Induced by Drugs Acting on Different Molecular Systems.

The gamma aminobutyric acid-A (GABAA) agonist, muscimol, the glutamate N-methyl-D-aspartate (NMDA) receptor antagonist, D-2-amino-5-phosphonopentanoic acid (AP5), and the inhibitor of the extracellularly regulated kinases (ERKs), UO 126, cause retrograde amnesia when administered to the hippocampus. In the present study, the authors found that they all cause retrograde amnesia for 1-trial inhibitory avoidance, not only when infused into the dorsal CA1 region of the hippocampus, but also when infused into the basolateral amygdala or the entorhinal, parietal, and posterior cingulate cortices. The posttraining time course of the effect of each drug was, however, quite different across brain structures. Thus, in all of them, NMDA receptors and the ERK pathway are indispensable for memory consolidation, and GABAA receptor activation inhibits memory consolidation: but in each case, their influence is interwoven differently. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

The magnetic structure of TbNiSiD1.78

TbNiSiD_1.78 has been studied by powder neutron diffraction below 100 K. The compound takes the hexagonal room temperature structure at 100 and 50 K (P6₃/mmc). At 2 K, below the antiferromagnetic ordering temperature of 10 K, there is a small orthorhombic distortion of the lattice. The refined unit-cell dimensions at 2 K (space group Pnma) are a=7.9505(2), b=4.02502(14), c=6.9823(2) Å. The magnetic moments of Tb are 8.71(6) μ_B, and are ordered antiferromagnetically along a.     

A 1-V 10.7-MHz switched-opamp bandpass /spl Sigma//spl Delta/ modulator using double-sampling finite-gain-compensation technique

A 1 V switched-capacitor (SC) bandpass sigma-delta (/spl Sigma//spl Delta/) modulator is realized using a high-speed switched-opamp (SO) technique with a sampling frequency of up to 50 MHz, which is improved ten times more than prior 1 V SO designs and comparable to the performance of the state-of-the-art SC circuits that operate at much higher supply voltages. On the system level, a fast-settling double-sampling SC biquadratic filter architecture is proposed to achieve high-speed operation. A low-voltage double-sampling finite-gain-compensation technique is employed to realize a high-resolution /spl Sigma//spl Delta/ modulator using only low-DC-gain opamps to maximize the speed and to reduce power dissipation. On the circuit level, a fast-switching methodology is proposed for the design of the switchable opamps to achieve a switching frequency up to 50 MHz. Implemented in a 0.35-/spl mu/m CMOS process (V/sub TP/=0.82 V and V/sub TN/=0.65 V) and at 1 V supply, the modulator achieves a measured peak signal-to-noise-and-distortion ratio (SNDR) of 42.3 dB at 10.7 MHz with a signal bandwidth of 200 kHz, while dissipating 12 mW and occupying a chip area of 1.3 mm/sup 2/.