Study of etch rate characteristics of SF6/He plasmas byresponse-surface methodology: effects of interelectrode spacing

The characteristics of SF₆/He plasmas which are used to etch Si₃N₄ have been examined with experimental design and modeled empirically by response-surface methodology using a Lam Research Autoetch 480 single-wafer system. The effects of variations of process gas flow rate (20-380 sccm), reactor pressure (300-900 mtorr). RF power (50-450 W at 13.56 MHz), and interelectrode spacing (8-25 mm) on the etch rates of LPCVD (low-pressure chemical vapor deposition) Si₃N₄, thermal SiO₂, and photoresist were examined at 22±2°C. Whereas the etch rate of photoresist increases with interelectrode spacing between 8 and 19 mm and then declines between 19 and 25 mm, the etch rate of Si₃N ₄ increases smoothly from 8 to 25 mm, while the etch rate of thermal SiO₂ shows no dependence on spacing between 8 and 25 mm. The etch rates of all three films decrease with increasing reactor pressure. Contour plots of the response surfaces for etch rate and etch uniformity of Si₃N₄ as a function of spacing and flow rate at constant RF power (250 W) display complex behavior at fixed reactor pressures. A satisfactory balance of etch rate and etch uniformity for Si₃N₄ is predicted at low reactor pressure (~300 mtorr), large electrode spacing (12-25 mm), and moderate process gas flow rates (20-250 sccm)     

Effects of Sc2O3 and MgO passivation layerson the output power of AlGaN/GaN HEMTs

The low temperature (100°C) deposition of Sc₂O₃ or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz, there was a better than 3 dB increase in output power of 0.5×100 μm² HEMTs for both types of oxide passivation layers. Both Sc₂ O₃ and MgO produced larger output power increases at 4 GHz than conventional plasma-enhanced chemical vapor deposited (PECVD) SiN_x passivation which typically showed ⩽2 dB increase on the same types of devices. The HEMT gain also in general remained linear over a wider input power range with the Sc₂O₃ or MgO passivation. These films appear promising for reducing the effects of surface states on the DC and RF performance of AlGaN/GaN HEMTs     

A low-power, linear, permanent-magnet generator/energy storagesystem

This paper describes the design, analysis and characterization of a linear permanent magnet generator and capacitive energy storage system for generating electrical power from a single stroke of a salient-pole armature. It is suitable for applications that require relatively low levels of electrical power, such as remote electronic locks. An electromagnetic analysis of the generator is described, and a design optimization methodology for the system is presented. Finally, the performance of a prototype is validated against measurements     

Nothing venture... [venture capital]

Many engineers dream of starting their own company. Venture capital's status as an important source of finance for technology start-up companies is enhanced during periods of economic downturn. The author outlines the role of the venture capitalist in helping to turn the aspiration into a commercially successful reality     

UPEC 2002 Preview

Exposure to pollutants in the air over a long period of time slowly degrades aluminum stranded conductors steel reinforced (ACSR) of overhead transmission lines. Presently, a large number of ACSR conductors have exceeded their forecast useful life. Therefore, it is required to assess the condition of most conductors to determine an economic maintenance schedule. This paper describes a method for evaluating the current condition of aged conductors based on dominant factors such as years in service, environment index, and conductor configuration. The paper presents a diagnostic tool with a fuzzy inference system (FIS) to predict the deterioration degree corresponding to the lifetime of aged conductors based on experts' knowledge. This system can be used as an effective guide to perform nondestructive diagnosis and maintenance of old ACSR conductors.     

Theoretical comparison of SiC PiN and Schottky diodes based on power dissipation considerations

In order to select the optimal device for a particular application, designers must carefully analyze the tradeoffs between competing devices. Recent progress in SiC power rectifiers has resulted in the demonstration of high-voltage PiN and Schottky barrier diodes (SBDs). With both technologies maturing, power electronics engineers will soon face the task of selecting between these two devices. Until recently, the choice was simple, since silicon SBDs are only available for relatively low voltage applications. The choice is not as clear when considering SiC diodes, and guidelines for determining the proper application of each are needed. The purpose of this paper is to provide such guidelines, based on an analysis of the most significant tradeoffs involved.     

Fivefold symmetry in real and reciprocal spaces

Tetrahedrally close-packed structures with juxtaposed pentagonal antiprisms, such as the μ, C14 Laves and the newly found C phases, were studied by means of HREM and SAD. It was found that each bright spot in the structural image corresponds to an antiprism. Differently oriented domains of these phases intergrow frequently with a fairly good match at the interphase boundary. All diffraction patterns of these phases show a fivefold distribution of spot-pairs, and it is shown that this fivefold symmetry comes from the pentagons and spot-pairs from two pentagonal prisms superposed in antisymmetrical positions.     

Applications of an Infrared Imager for Determining Temperature Fields in Gas Flows

A device containing a temperature converter with an infrared camera is described. Its application allows one to instantly measure the temperature field of a gas flow in regions of arbitrary sizes.