Suitability of four blackcurrant cultivars for industrial syrup production

The four blackcurrant cultivars Øjebyn, Ben Nevis, Ben Lomond and Silvergieter have been evaluated with reference to their suitability for syrup production. The examination was based on sensory and physico-chemical characterisation, and was performed on the berries themselves and the syrup. The results show that Øjebyn is less suitable for syrup production, while Ben Nevis and Ben Lomond differ insignificantly in most qualities from the reference cultivar, Silvergieter. Criteria for the evaluation of cultivars for industrial suitability are discussed.     

Tunable Injection Barrier in Organic Resistive Switches Based on Phase‐Separated Ferroelectric–Semiconductor Blends

Organic non‐volatile resistive bistable diodes based on phase‐separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor–electrode contact and, hence, the resistance of the comprising diodes. Comparison between the on‐ and off‐current of the switching diodes, with the current measured for semiconductor‐only diodes reveals that the switching occurs between bulk‐limited, i.e., space‐charge‐limited, and injection‐limited current transport. By deliberately varying the HOMO energy of the semiconductor and the work‐function of the metal electrode, it is demonstrated that injection barriers up to 1.6 eV can be surmounted by the ferroelectric polarization yielding on/off current modulations of more than five orders of magnitude. The exponential dependence of the current modulation with a slope of 0.25 eV/decade is rationalized by the magnitude of the injection barrier.     

The Effect of Ketone Defects on the Charge Transport and Charge Recombination in Polyfluorenes

The effect of on‐chain ketone defects on the charge transport of the polyfluorene derivative poly(9,9‐dioctylfluorene) (PFO) is investigated. Using MoO₃ as ohmic hole contact, the hole transport in a pristine PFO diode is observed to be limited by space‐charge, whereas fluorenone contaminated PFO (PFO‐F) is shown to be trap limited by the occurrence of an exponential trap distribution with a trap depth of 0.18 eV. The electron transport in PFO is also observed to be trap limited, but in order to describe the electron transport of PFO‐F, an additional trap level with a depth of 0.46 eV must be introduced. The obtained energy levels of the fluorenone trapping sites are in close agreement with cyclic voltammetry (CV) measurements reported in literature. As a result, the fluorenone defects are shown to simultaneously act as hole‐ and electron trap. Moreover, through ideality factor measurements, the green emission associated with these defects is observed to originate from trap‐assisted recombination.     

Co‐Interlayer Engineering toward Efficient Green Quasi‐Two‐Dimensional Perovskite Light‐Emitting Diodes

With respect to three‐dimensional (3D) perovskites, quasi‐two‐dimensional (quasi‐2D) perovskites have unique advantages in light‐emitting devices (LEDs), such as strong exciton binding energy and good phase stability. Interlayer ligand engineering is a key issue to endow them with these properties. Rational design principles for interlayer materials and their processing techniques remain open to investigation. A co‐interlayer engineering strategy is developed to give efficient quasi‐2D perovskites by employing phenylbutylammonium bromide (PBABr) and propylammonium bromide (PABr) as the ligand materials. Preparation of these co‐interlayer quasi‐2D perovskite films is simple and highly controllable without using antisolvent treatment. Crystallization and morphology are readily manipulated by tuning the ratio of co‐interlayer components. Various optical techniques, including steady and ultrafast transient absorption and photoluminescence spectroscopies, are used to investigate their excitonic properties. Photoluminescence quantum yield (PLQY) of the perovskite film is dramatically improved to 89% due to the combined optimization of exciton binding energy and suppression of trap state formation. Accordingly, a high current efficiency of 66.1 cd A^?1 and an external quantum efficiency of 15.1% are achieved for green co‐interlayer quasi‐2D perovskite LEDs without using any light out‐coupling techniques, indicating that co‐interlayer engineering is a simple and effective approach to develop high‐performance perovskite electroluminescence devices.     

Hole-enhanced electron injection from ZnO in inverted polymer light-emitting diodes

Metal oxides as ZnO provide an interesting alternative for conventional low work function metals as electron injection layer in organic light-emitting diodes (OLEDs). However, for most state-of-the-art OLED materials the high work function of ZnO leads to a large injection barrier for electrons. As a result the electron current in the OLED is largely limited by the contact, leading to a strong reduction of the conversion efficiency. Here we demonstrate that by depositing an amorphous ZnO layer as cathode in an inverted polymer LED, the electron injection can be strongly enhanced by electrical conditioning. For suited polymers comparable conversion efficiencies of the conventional and inverted PLEDs can be achieved.     

Electrical characterization of polymer light-emitting diodes

This paper presents a device model for the current and light generation of polymer light-emitting diodes (PLEDs). The model is based on experiments carried out on poly(dialkoxy-p-phenylene vinylene) (PPV) devices. It is demonstrated that PLED's are fundamentally different as compared to conventional inorganic LEDs. The hole conduction in PPV is space-charge limited with a low-field mobility of only 5×10^-11 m²/Vs, which originates from the localized nature of the charge carriers. Furthermore, the hole mobility is highly dependent on the electric field and the temperature. The electron conduction in PPV is strongly reduced by the presence of traps. Combining the results of the electron- and hole transport a device model for PLEDs is proposed in which the light generation is due to bimolecular recombination between the injected electrons and holes. It is calculated that the unbalanced electron and hole transport gives rise to a bias dependent efficiency. By comparison with experiment it is found that the bimolecular recombination process is of the Langevin-type, in which the rate-limiting step is the diffusion of electrons and holes toward each other. This is in contrast to conventional semiconductors, in which the bimolecular recombination is governed by the joint density-of-states of electrons and holes and is not limited by charge transport. The occurrence of Langevin recombination explains why the conversion efficiency of current into light of a PLED is temperature independent. The understanding of the device operation of PLED's indicates directions for further improvement of the performance     

Gate-bias assisted charge injection in organic field-effect transistors

The charge injection barriers in organic field-effect transistors (OFETs) seem to be far less critical as compared to organic light-emitting diodes (OLEDs). Counter intuitively, we show that the origin is image-force lowering of the barrier due to the gate bias at the source contact, although the corresponding gate field is perpendicular to the channel current. In coplanar OFETs, injection barriers up to 1 eV can be surmounted by increasing the gate bias, enabling extraction of bulk transport parameters in this regime. For staggered transistors, however, the injection is gate-assisted only until the gate bias is screened by the accumulation channel opposite to the source contact. The gate-assisted injection is supported by two-dimensional numerical charge transport simulations that reproduce the gate-bias dependence of the contact resistance and the typical S-shaped output curves as observed for OFETs with high injection barriers.     

Hole Transport in Poly(phenylene vinylene)/Methanofullerene Bulk‐Heterojunction Solar Cells

A fundamental limitation of the photocurrent of solar cells based on a blend of poly(2‐methoxy‐5‐(3′,7′‐dimethyloctyloxy)‐p‐phenylene vinylene) (MDMO‐PPV) and [6,6]‐phenyl C₆₁‐butyric acid methyl ester (PCBM) is caused by the mobility of the slowest charge‐carrier species, the holes in the MDMO‐PPV. In order to allow the experimentally observed photocurrents electrostatically, a hole mobility of at least 10^–8 m² V^–1 s^–1 is required, which exceeds the observed hole mobility in pristine MDMO‐PPV by more than two orders of magnitude. However, from space‐charge‐limited conduction, admittance spectroscopy, and transient electroluminescence measurements, we found a hole mobility of 2 × 10^–8 m² V^–1 s^–1 for the MDMO‐PPV phase in the blend at room temperature. Consequently, the charge‐carrier transport in a MDMO‐PPV:PCBM‐based solar cell is much more balanced than previously assumed, which is a necessary requirement for the reported high fill factors of above 50 %.     

An architecture for a configurable mixed-signal device

The mixed-signal programmable system-on-chip (PSOC) architecture for high-volume low-cost applications is presented. Programmable analog, digital, and clocking circuits are combined with flash memory and a microcontroller to provide a platform for single-chip solutions for low-cost consumer applications. Both programmable analog and digital circuits are designed to support a moderate level of abstraction, balancing flexibility against cost and performance. A rough comparison of alternative approaches based on functionality and cost is presented.