A Differential-Mode Wideband Bandpass Filter on Microstrip Line for UWB Application

A differential-mode wideband bandpass filter (BPF) on microstrip line is proposed with good common-mode suppression. A four port two stage branch-line differential-mode BPF is first designed. Then, open circuited stubs are attached to the middle of two of the vertical branches. As such, its two-port bisection becomes a bandpass or bandstop filtering topology under differental- or common-mode excitations, respectively. The lengths and widths of these stubs can be properly adjusted to produce a highly attenuated and widened stopband under the common-mode operation. Finally, a wideband differential-mode BPF is designed and fabricated. The predicted and measured performances are in good agreement with each other, showing good common-mode suppression with an insertion loss higher than 20 dB over the differential-mode passband with a fractional bandwidth of 65%.     

Improvement of form accuracy in hybrid machining of microstructures

Micromachining is gaining popularity due to recent advancements in Micro Electro Mechanical Systems. Using conventional micromachining, it is relatively difficult to produce moving components in the order of microns. In this study, an attempt is made to fabricate microstructures using a combination of turning and electrodischarge machining (EDM). Several sets of experiments have been performed to study the characteristics of the hybrid machining process. From the experiments, it has been observed that a higher form of accuracy could be obtained by integrating the on-machine fabrication of the tool and by subsequently using the same tool for EDM. The main cause of the form error is due to the deflection of the shaft during turning. Hence, an attempt is made to observe the deflection of the shaft using a deflection sensor. The influence of micro-EDM parameters such as feed rate, discharge circuits, and gap control parameters on material removal rate and tool wear is also discussed in this study.     

Hybrid ring coupler for W-band MMIC applications using MEMS technology

The hybrid ring coupler was designed and fabricated on a GaAs substrate using surface micromachining techniques, which adopted dielectric-supported air-gapped microstrip line (DAML) structure. The fabrication process of DAML is compatible with the standard monolithic microwave integrated circuit (MMIC) techniques, and the hybrid ring coupler can be simply integrated into a plane-structural MMIC. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of 3.57 /spl plusmn/ 0.22dB and the transmission loss of 3.80 /spl plusmn/ 0.08dB across the measured frequency range of 85 to 105GHz. The isolation characteristics and output phase differences are -34dB and 180/spl plusmn/1/spl deg/, at 94GHz, respectively.     

Bendable and Splitter-Integrated Optical Subassembly Based on a Flexible Optical Board

A bendable and splitter-integrated optical subassembly (OSA) is suggested as a short-distance board-to-board optical interconnection. This OSA was fabricated by simply packaging a vertical-cavity surface-emitting laser on a flexible optical board having an embedded 1 $times$ 8 optical splitter waveguide. Finally, we measured various optical characteristics of the OSA, including insertion, twist, and bending losses.      

Numerical Optimization of an Active Voltage Controller for High-Power IGBT Converters

Feedback control of insulated gate bipolar transistors (IGBTs) in the active region can be used to regulate the device switching trajectory. This facilitates series connection of devices without the use of external snubber networks. Control must be achieved across the full active region of the IGBT and must balance a number of conflicting system goals including diode recovery. To date, the choice of control parameters has been a largely empirical process. This paper uses accurate device models and formalized optimization procedures to evaluate IGBT active voltage controllers. A detailed optimization for the control of IGBT turn-on is presented in this paper     

Effects of CEE and Feedback Error on Performance for AF-ORS with PSA-CE Schemes Over Quasi-Static Rayleigh Fading Channels

In this paper, we propose the analytical approach for amplify-and-forward (AF) opportunistic relaying schemes (ORS). When operation of AF-ORS consists of relay selection and data transmission phases based on pilot symbol assisted-channel estimation (PSA-CE) methods over quasi-static Rayleigh fading channels, we show that the relay selection phase can be implemented by pilots symbols transmission for source-relay and relay-destination. Moreover, the feedback method for the selected relay index is proposed to have a simple fashion. Then, we investigate the effects of both a channel estimation error and an estimated noise variance, which are obtained by PSA-CE methods, on the received signal-to-noise ratio (SNR). The average SNR loss is also derived in terms with the number of pilots in PSA-CE methods. Moreover, the average symbol error rate, the outage probability, and the normalized channel capacity of the ORS are derived in approximated closed-form expressions for an arbitrary link SNR when the channel state information in the source-relay-destination link is estimated based on transmitted pilots symbols. As the number of pilot symbols, the derived analytical approach is verified, and by comparing it with simulation results, the accuracy is demonstrated. In addition, it is verified that the effect of the feedback error can be neglected for PAS-CE methods over quasi-static fading channels.     

Efficient Generation of Scalable Transport Stream for High Quality Service in T‐DMB

We introduce an advanced terrestrial digital multimedia broadcasting (AT‐DMB) system that overcomes the limitation of data transmission rates of T‐DMB by doubling it with the same frequency bandwidth. In this letter, we propose an efficient algorithm which generates a scalable transport stream in AT‐DMB by multiplexing certain types of elementary streams encoded using scalable video coding and an MPEG‐surround audio coder for high‐quality multimedia services.     

Low‐Power 512‐Bit EEPROM Designed for UHF RFID Tag Chip

In this paper, the design of a low‐power 512‐bit synchronous EEPROM for a passive UHF RFID tag chip is presented. We apply low‐power schemes, such as dual power supply voltage (VDD=1.5 V and VDDP=2.5 V), clocked inverter sensing, voltage‐up converter, I/O interface, and Dickson charge pump using Schottky diode. An EEPROM is fabricated with the 0.25 μm EEPROM process. Power dissipation is 32.78 μW in the read cycle and 78.05 μW in the write cycle. The layout size is 449.3 μm × 480.67 μm.     

Writing current reduction and total set resistance analysis in PRAM

We evaluated the limit of scaling bottom electrode contact (BEC) heater size and high resistivity heater to reduce writing current. It was found that the resistivity of heater should be increased for reducing writing current below the heater size of about 50 nm without any undesirable increase of resistance of the crystalline state (SET state, Rset). It was shown in the numerical simulations that the dissipated heat loss through BEC during melting GST was decreased in the increase of resistivity of heater. In addition, we analyzed the resistance components contributing to the total set resistance. It was observed that the undesired sharp increase of Rset as the BEC size decreases below 50 nm was attributed to the resistance component of GST–BEC interface. In the case of high resistivity heater, the contributions of both incomplete crystallization and heater itself were enhanced.     

Power law behavior of magnetoresistance in tris(8-hydroxyquinolinato)aluminum-based organic light-emitting diodes

Long-term current drift and dielectric relaxation in organic thin films of a single-layer structure pose a serious problem for the accurate measurement of magnetoresistance at low magnetic fields. A new measurement scheme was devised to minimize errors and to report that the magnetoresistance in tris(8-hydroxyquinolinato)aluminum obeys a power law on the magnetic field at 300, 100, and 4.2 K in an entire range from 1 to 140 mT. The exponent of the power increases gradually from 0.47 for a bias voltage of 3 V to 0.58 for a bias voltage of 8 V. The magnetoresistance was observable above the threshold voltage only and its sign was always negative.