A flip-chip packaged 80-nm In0.7Ga0.3As MHEMT for millimeter-wave low-noise applications

In this paper, we present a flip-chip 80-nm In_0.7Ga_0.3As MHEMT device on an alumina (Al₂O₃) substrate with very little decay on device RF performance up to 60 GHz. After package, the device exhibited high I_DS = 435 mA/mm at V_DS = 1.5 V, high g_m = 930 mS/mm at V_DS = 1.3 V, the measured gain was 7.5 dB and the minimum noise figure (NF_min) was 2.5 dB at 60 GHz. As compared to the bare chip, the packaged device exhibited very small degradation in performance. The result shows that with proper design of the matching circuits and packaging materials, the flip-chip technology can be used for discrete low noise FET package up to millimeter-wave range.     

Development of a large area plate-to-plate type UV imprinting tool

A UV imprint lithography tool has been developed for micro/nano-scale patterning in an extremely large area, i.e., ∼300 × 400 mm². To achieve high pattern fidelity, residual-layer thickness uniformity, and an air bubble-free layer in a large area, the UV imprint tool has several main components including a silicon rubber uniform pressurizer, a large area UV-LED module, a vacuum pump, a chuck module, etc. Contact and structural analyses have been performed using commercial FEM packages such as LS-DYNA and ANSYS. The developed tool has been tested, and its performance indices including pattern fidelity and residual-layer thickness uniformity have been measured to be ∼97% and ∼90%, respectively.     

Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

A lanthanum (La)-doped HfN is investigated as an n-type metal gate electrode on SiO₂ with tunable work function. The variation of La concentration in (HfinfinLa_1-x)N_y modulates the gate work function from 4.6 to 3.9 eV and remains stable after high-temperature annealing (900degC to 1000degC), which makes it suitable for n-channel MOSFET application. An ultrathin high-fc dielectric layer was formed at the metal/SiO₂ interface due to the (HfinfinLa_1-x)N_y and SiO₂ interaction during annealing. This causes a slight reduction in the effective oxide thickness and improves the tunneling current of the gate dielectric by two to three orders. We also report the tunability of TaN with Al doping, which is suitable for a p-type metal gate work function. Based on our results, several dual-gate integration processes by incorporating lanthanum or aluminum into a refractory metal nitride for CMOS technology are proposed.     

Advances and Challenges with Data Broadcasting in Wireless Mesh Networks

Wireless mesh networks have become a promising means to provide low-cost broadband access. Many WMN applications require broadcasting data (IPTV etc.) over the WMN. This article studies how efficient data broadcast, measured in terms of broadcast latency, can be realized by exploiting two features of WMNs: the use of multiple transmission rates at the link layer and the use of multiple radio interfaces on each node. We demonstrate that by exploiting these features, broadcast latency can be reduced severalfold compared to the current default practice in wireless LANs of using the lowest transmission rate for broadcast traffic. We also discuss two important insights we have gained from our investigation. First, we find that when multiple radio interfaces are used, a channel assignment algorithm designed for unicast traffic may often perform poorly for broadcast flows. Second, we find that the efficiency of a transmission rate for reducing broadcast latency can be reasonably predicted by the product of the transmission rate and its coverage area.     

Chiroptical‐Conjugated Polymer/Chiral Small Molecule Hybrid Thin Films for Circularly Polarized Light‐Detecting Heterojunction Devices

Herein, a simple and facile strategy is described to obtain chiroptically active semiconductor thin films by blending of poly(3‐alkylthiophene)s, which are conventional achiral polymer semiconductors, and 1,1′‐binaphthyl (BN), a versatile chiral molecule. As expected, the intermolecular interaction between the two materials is important to extend the chirality of the binaphthyl molecules to the hybrid films. The controlled phase separation and crystallization of poly[3‐(6‐carboxyhexyl)thiophene‐2,5‐diyl] (P3CT) and binaphthyl hybrid films result in unique heterojunction bilayer thin‐film structures that consisted of BN microcrystals at the top and a P3CT/BN mixed layer at the bottom. Such heterojunction bilayer films exhibit significantly amplified chiroptical response with weak broadened tails, which is due to the enhanced crystallization of the chiral BN molecules and formation of heteroaggregates in the hybrid films. Based on the characterization of crystalline structure and photoluminescence analysis, it is found that new electronic energy states are formed in the conduction band region of P3CTs in the P3CT/BN heteroaggregates, which contribute to chirality transfer from BN to the hybrid films. As a proof of concept, a photodiode capable of distinguishably sensing the left‐ and right‐handed circularly polarized light is successfully fabricated by using the hybrid films with the heterojunction bilayer structure.     

A Novel Genetic Algorithm for the Design of a Signed Power-of-Two Coefficient Quadrature Mirror Filter Lattice Filter Bank

A novel genetic algorithm (GA) for the design of a canonical signed power-of-two (SPT) coefficient lattice structure quadrature mirror filter bank is presented in this paper. Genetic operations may render the SPT representation of a value noncanonical. In this paper, a new encoding scheme is introduced to encode the SPT values. In this new scheme, the canonical property of the SPT values is preserved under genetic operations. Additionally, two new features that drastically improve the performance of our GA are introduced. (1) An additional level of natural selection is introduced to simulate the effect of natural selection when sperm cells compete to fertilize an ovule; this dramatically improves the offspring survival rate. A conventional GA is analogous to intracytoplasmic sperm injection and has an extremely low offspring survival rate, resulting in very slow convergence. (2) The probability of mutation for each codon of a chromosome is weighted by the reciprocal of its effect. Because of these new features, the performance of our new GA outperforms conventional GAs.     

ACAR: Adaptive Connectivity Aware Routing for Vehicular Ad Hoc Networks in City Scenarios

Multi-hop vehicle-to-vehicle communication is useful for supporting many vehicular applications that provide drivers with safety and convenience. Developing multi-hop communication in vehicular ad hoc networks (VANET) is a challenging problem due to the rapidly changing topology and frequent network disconnections, which cause failure or inefficiency in traditional ad hoc routing protocols. We propose an adaptive connectivity aware routing (ACAR) protocol that addresses these problems by adaptively selecting an optimal route with the best network transmission quality based on statistical and real-time density data that are gathered through an on-the-fly density collection process. The protocol consists of two parts: 1) select an optimal route, consisting of road segments, with the best estimated transmission quality, and 2) in each road segment of the chosen route, select the most efficient multi-hop path that will improve the delivery ratio and throughput. The optimal route is selected using our transmission quality model that takes into account vehicle densities and traffic light periods to estimate the probability of network connectivity and data delivery ratio for transmitting packets. Our simulation results show that the proposed ACAR protocol outperforms existing VANET routing protocols in terms of data delivery ratio, throughput and data packet delay. Since the proposed model is not constrained by network densities, the ACAR protocol is suitable for both daytime and nighttime city VANET scenarios.     

Smart CMOS Image Sensor With High SBR and Subpixel Resolution for Light-Section-Based Range Finding

Light-section (LS)-based range finders are commonly used for obstacle recognition in home service robots and autonomous vehicles. This paper proposes a smart CMOS image sensor for LS-based range finding. The proposed sensor can detect the laser light, even under very strong ambient-illumination levels by using a multiple-capture frame-correlated double sampling (F-CDS), which is realized with an inverter-based switched-capacitor F-CDS accumulator. The proposed sensor also includes on-chip winner-take-all circuits that significantly reduce the software and hardware complexity of interpolation for the subpixel resolution. The prototype chip was fabricated using a 0.35-mum CMOS process. The measurement results show that the proposed sensor can detect a laser line with an intensity that is 56.5 dB lower than that of the ambient illumination, providing a spatial resolution of plusmn0.16 pixels.     

Self-Assembled Perovskite Nanoislands on CH3NH3PbI3 Cuboid Single Crystals by Energetic Surface Engineering

Organometal perovskite single crystals have been recognized as a promising platform for high-performance optoelectronic devices, featuring high crystallinity and stability. However, a high trap density and structural nonuniformity at the surface have been major barriers to the progress of single crystal-based optoelectronic devices. Here, the formation of a unique nanoisland structure is reported at the surface of the facet-controlled cuboid MAPbI₃ (MA = CH₃NH₃⁺) single crystals through a cation interdiffusion process enabled by energetically vaporized CsI. The interdiffusion of mobile ions between the bulk and the surface is triggered by thermally activated CsI vapor, which reconstructs the surface that is rich in MA and CsI with reduced dangling bonds. Simultaneously, an array of Cs-Pb-rich nanoislands is constructed on the surface of the MAPbI₃ single crystals. This newly reconstructed nanoisland surface enhances the light absorbance over 50% and increases the charge carrier mobility from 56 to 93 cm² V⁻¹ s⁻¹. As confirmed by Kelvin probe force microscopy, the nanoislands form a gradient band bending that prevents recombination of excess carriers, and thus, enhances lateral carrier transport properties. This unique engineering of the single crystal surface provides a pathway towards developing high-quality perovskite single-crystal surface for optoelectronic applications.     

Design of electrically small ground planes for HF ground wave transmission

Electrically small spiral ground planes for a monopole and an electrically small antenna have been designed for HF ground wave transmission. Prototype ground planes have been built and tested. For the monopole, the transmission loss of the designed ground plane is 6 dB better than that of the same size ground radials. For the electrically small antenna, the transmission loss of the designed ground plane is 7 dB better than that of the same size solid ground plane at the antenna's operating frequency.