Online monitoring by dynamically refining imprecise models

Model-based monitoring determines faults in a supervised system by comparing the available system's measurements with a priori information represented by the system's mathematical model. Especially in technical environments, a monitoring system must be able to reason with incomplete knowledge about the supervised system, to process noisy and erroneous observations and to react within a limited time. We present MOSES, a model-based monitoring system which is based on imprecise models where the structure is known and the parameters may be imprecisely specified by numerical intervals. As a consequence, only bounds on the trajectories can be derived with imprecise models. These bounds are computed using traditional numerical integration techniques starting from individual points on the external surface of the model's uncertainty space. When new measurements from the supervised system become available, MOSES checks the consistency of this new information with the model's prediction and refutes inconsistent parts from the uncertainty space of the model. A fault in the supervised system is detected when the complete model's uncertainty space has been refuted. MOSES bridges and extends methodologies from the FDI and DX communities by refining the model's uncertainty space conservatively through refutation, by applying standard numerical techniques for deriving the trajectories of imprecise models and by exploiting the measurements as soon as possible for online monitoring. The performance of MOSES is evaluated based on examples and by online monitoring a complex heating system.     

Spannungsintensitätsfaktoren für vollständig umlaufende Oberflächenumfangsrisse in Rohren bei Thermoschockbelastung

Stress Intensity Factors for Complete Circumferential Surface Cracks in Thermally Shocked Pipes In the case of an emergency cooling of a reactor thermal stresses are generated in the pipes of the primary loop, which may be described conservatively as a thermal shock problem. In this paper complete interior circumferential surface cracks loaded by these thermal stresses are considered. By means of the weight function method stress intensity factors were calculated for this loading case.     

Vortex Dynamics in Bi2Sr2CaCu2O8 Single Crystal with Low Density Columnar Defects Studied by Magnetic Force Microscope

We have studied vortex dynamics in Bi₂Sr₂CaCu₂O₈ single crystal with low density columnar defects by using a magnetic force microscope. Single crystal Bi₂Sr₂CaCu₂O₈ sample was irradiated by 1.3 GeV uranium ion to form artificial pinning centers along the crystalline c-axis. The irradiation dose corresponded to a matching field of 20 gauss. The radius of an individual vortex is approximately 140 nm, which is close to the penetration depth of this material. Magnetic force microscope (MFM) images show that intrinsic crystalline defects such as stacking fault dislocations are very effective pinning centers for vortices in addition to the pinning centers due to ion bombardment. By counting the number of vortex, we found that the flux trapped at each pinning center is a single flux quantum. At higher magnetic field, the vortex structure showed an Abrikosov lattice disturbed only by immobile vortices located at pinning centers. When increasing or decreasing the external magnetic field, the spatial distribution of vortices showed a Bean model like behavior.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

Grain size effects on the mechanical properties of some squeeze cast light alloys

Mechanical property-grain size relationships have been examined for squeeze cast Al-4.5% Cu alloy, for an aluminium alloy with a composition corresponding to wrought 7010, and for a magnesium alloy AZ91. The general trend of the results obtained showed that the tensile properties and the fatigue strength improved as grain size decreased and the reverse was found to be the case for the fatigue crack propagation resistance and fracture energy of these castings. However, the results also showed that no simple common relationship existed between grain size and the tensile properties of the different alloys. The results are discussed in respect of their microstructures.     

Primer-induced labeling of pea and field bean chromosomes in situ and in suspension

A protocol for primed in situ DNA labeling (PRINS) was optimized for pea (Pisum sativum L.) and field bean (Vicia faba L.) chromosomes attached to coverslips. Cloned DNA or synthetic oligonucleotides were used as probes for repetitive DNA sequences (rDNA, Fok-element) and different reaction conditions were tested to achieve the highest specific signal-to-background ratio. A procedure based on direct labeling by fluorescein-dUTP was compared with an indirect one using digoxigenin detected by fluorescently labeled antibody. Under optimal conditions, strong and specific signals were obtained exclusively on chromosome regions known to contain respective DNA sequences. Compared to the direct labeling, significantly stronger signals were obtained when the indirect procedure was used. Both types of labeling were successfully applied to chromosomes in suspension and were shown to produce signals comparable to that obtained with chromosomes attached to coverslips. It is expected that primed in situ DNA labeling en suspension (PRINSES) will provide a basis for flow-cytometric discrimination and sorting of otherwise indistinguishable chromosomes according to their specific fluorescent labeling.     

Mesa and planar SiGe-HBTs on MBE-wafers

SiGe-HBTs have the potential for outstanding analog and digital or mixed-signal high frequency circuits widely based on standard Si technology. Here we review on MBE grown transistors and circuits. Processes and results of a research-like SiGe HBT and two possible production relevant HBT versions are presented. The high frequency results with f_max and f_T up to 120 GHz and a minimum noise figure of 0.9 dB at 10 GHz demonstrate the advantage of using MBE samples with steep and high base doping and high germanium contents. A comparison to the concept of reported low doped, low germanium and triangular profiled SiGe base layers, realized by UHV-CVD, is given. In addition, some circuit demonstrators of SiGe-ICs will be presented.     

Crystallographic shear planes in nanocrystalline SnO2 thin films by high-resolution transmission electron microscopy

Atomic structures of crystallographic shear planes (CSPs) in nanocrystalline thin films of semiconductor SnO₂ were investigated by high-resolution electron microscopy. The films were prepared by electron beam evaporation in high vacuum (10^–6 torr) and followed by annealing in synthetic air at 700 °C for 1–2 H. CSPs with the displacement vector of [1/2 0 1/2] were observed in the planes parallel to (¯101), (110) and (¯3¯21). Most of the CPSs were found to terminate or interact with each other within SnO₂ crystallites. Partial dislocations exist at terminal places of CSPs or along intersecting lines of CSPs. CSP steps were also observed. Structural models of these defects have been proposed. Based on analysis of experimental data, it has been suggested that the Sn/O ratio at CSPs which are not parallel to their displacement vector, at cores of partial dislocations and at CSP steps, is higher than that of the perfect structure, that is, these defects are able to provide extra free electrons with the films.