The Nanometer-Sized Eutectic Structure of Si/CrSi<Subscript>2</Subscript> Thermoelectric Materials Fabricated by Rapid Solidification

Nanostructuring is known to be an effective method to improve thermoelectric performance but, generally, it requires complex procedures and much labor. In the present study, self-assembled nanometer-sized composite structures of silicon (Si) and chromium disilicide (CrSi₂) were easily fabricated by the rapid solidification of a melt with a eutectic composition. Ribbon-like samples were obtained with a dominant nanostructure of fine aligned lamellae with a spacing range of 20–35 nm. The thermoelectric power factor of the ribbon was observed to be 1.2 mW/mK² at room temperature and reached 3.0 mW/mK² at 773 K. The thermal conductivity was 65% lower than that of a bulk eutectic sample. The results suggest that this method is promising for fabricating an effective nanostructure for thermoelectric performance.     

Observation of iron silicide formation by plan-view transmission electron microscopy

The formation and the phase transitions of iron silicide by solid-phase epitaxy have been investigated by means of plan-view transmission electron microscopy, which enables us to observe a clean interface between Fe and Si. Layers of Fe were deposited on Si (100) at room temperature in an ultrahigh vacuum chamber. The sample was annealed in the electron microscope at a temperature between 673 and 1073 K. After annealing at 673 K, FeSi crystallites were formed with various orientations. When the annealing temperature was increased to 973 K, we found that the crystallites suddenly started to coalesce into grains of several hundreds of nanometers in size and polycrystalline beta-FeSi2 was formed. These phase transitions were also confirmed with electron energy-loss spectroscopy.     

HDR satellite codec with concatenated multilevel codes

The performance of a high data rate (HDR) codec based on a multidimensional modulation code derived from multilevel codes is evaluated for a satellite channel. The codec reliably supports HDR transmission for broadband ISDN over a 72 MHz satellite transponder and is designed to be used with an 8 PSK modem. Results show that significant coding gain with higher spectral efficiency can be achieved compared to uncoded QPSK     

NRZ operation at 40 Gb/s of a compact module containing an MQW electroabsorption modulator integrated with a DFB laser

NRZ operation at 40 Gb/s has been successfully performed using a very compact module of a multiple-quantum-well (MQW) electroabsorption modulator integrated with a distributed-feedback (DFB) laser. While the DFB laser is injected with a constant current, the integrated MQW electroabsorption modulator is driven with a 10-Gb/s electrical NRZ signal. A clearly opened eye diagram has been observed in the modulated light from the modulator. And a receiver sensitivity of -27.2 dBm at 10/sup -9/ has been experimentally confirmed in the bit-error-rate (BER) performance.     

Design criteria of 1.3-μm multiple-quantum-well lasers forhigh-temperature operation

We present design criteria for high-temperature operation in 1.3-μm multiple-quantum-well (MQW) lasers from the viewpoint of the light output power penalty, i.e., the change in the light output power at a fixed drive current with increasing temperature. It is shown that not only the characteristic temperature (T₀) but also internal loss dependence on temperature (γ) and threshold current (I_th) are significant parameters for reducing the power penalty. We compare the high-temperature performance of InGaAsP-based and AlGaInAs-based MQW lasers and demonstrate that AlGaInAs-based lasers have more potential in terms of the power penalty. Furthermore, we also demonstrate that the power penalty can be reduced by introducing a buried-heterostructure (BH) structure into AlGaInAs-based lasers. From these results, we conclude that the AlGaInAs-based BH lasers are promising for high-temperature performance     

Fabrication of MOD-derived YBCO films on [001]LaAlO/sub 3/ and their application to /spl lambda//4 CPW SIR BPFs

Chemically derived epitaxial thin films of YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) are fabricated on [001]LaAlO/sub 3/ substrates by the metalorganic-deposition (MOD) process, which has advantages of high quality, nonvacuum, low-cost, and large-scale production of high-T/sub c/ superconducting films. The MOD-derived YBCO films have a sharp transition at the critical temperature (90.4 K) and a high-quality film with a surface resistance of 0.13 m/spl Omega/ (30 K, 9.98 GHz) is obtained. As a microwave application, simple and compact bandpass filters (BPFs) using /spl lambda//4 coplanar-waveguide. stepped-impedance resonators are demonstrated on the YBCO films. A two-stage Chebyshev BPF of center frequency of 5.731 GHz, bandwidth of 135 MHz, and insertion loss of 0.29 dB with little input power dependency in a power range less than 10 dBm is realized on the film.     

Electron transport behaviour in Nb-doped SrTiO3 bicrystals

In order to elucidate the relationship between electron transport behaviour and defect chemistry, grain boundary structure and current-voltage characteristics across the boundary were investigated for Nb-doped SrTiO3 bicrystals. Two kinds of boundaries, i.e. small angle and random boundaries, were prepared for 0.2at% and 1.0at% Nb-doped SrTiO3. The bicrystals were prepared by joining two single crystals at 1400 degrees C for 10 h under a pressure of 0.4 MPa in air. High-resolution transmission electron microscopy (HRTEM) study revealed that all of the joined boundaries are free from any secondary phases or amorphous films. On the other hand, it was found that non-linearity in current-voltage dependence becomes remarkable by reduction of cooling rate after joining in small angle boundaries of 0.2at% Nb-doped SrTiO3 bicrystal. In addition, the random boundary of 1.0at% Nb-doped SrTiO3 bicrystal exhibits clear alpha = 2 I-V relation, which appears across a contact of semiconductor-insulator-semiconductor (n-i-n). From the results of HRTEM study and I-V behaviours, it could be concluded that the electron transport mechanism is controlled mainly by defect chemistry and not by the grain boundary structure.     

Generation of picosecond blue light pulse by frequency doubling ofgain-switched GaAlAs laser diode having saturable absorber

Picosecond pulse generation of blue light by frequency doubling of a GaAlAs laser diode is reported. High power pulse generation is realized by incorporating gain switching of a laser diode with a saturable absorber and frequency doubling in a proton-exchanged MgO:LiNbO₃ waveguide. The laser diode with a longer saturable absorber can produce optical pulses with higher peak power and narrower pulse width. The spectral bandwidth of second-harmonic generation for the waveguide is evaluated at about 20 nm. This is wide enough to frequency-double all the multilongitudinal modes of the gain-switched laser diode. A blue light pulse of 7.88-mW maximum peak power and 28.7-ps pulsewidth is obtained for a 1.23-W peak pulse of the laser diode     

1 V 2 GHz CMOS frequency divider

A new frequency divider, called differential injection locking, is proposed. The proposed divider has no transistor stacking to suppress the performance degradation due to supply voltage reduction. It is shown that the proposed frequency divider achieves 2 GHz with 1 V supply voltage and 540 /spl mu/W power consumption.     

Electrical Properties of Isotropic Conductive Adhesives Composed of Silicone-Based Elastomer Binders Containing Ag Particles

The electrical properties of isotropic conductive adhesives (ICAs) with two different types of silicone-based binder containing Ag particles were examined. The ICAs were printed on glass substrates in order to prepare specimens for evaluating the electrical properties. In the case of adhesives containing a denatured silicone binder, both the curing and cooling steps in the isothermal curing process generated electrical conductivity. Adhesives that were cured at 120°C to 200°C exhibited similar values of electrical resistivity regardless of the different curing temperatures. By contrast, electrical conductivity was generated only during the cooling step when adhesives containing a dimethyl methylvinyl siloxane were isothermally cured. In this case, adhesives cured above 160°C exhibited high electrical resistivity. In evaluating the temperature dependence of the electrical resistivity, we found physical annealing to have significantly different effects on these specimens. In addition, we were able to make small sensitive variations in the properties of silicone-based ICAs by controlling the isothermal annealing and thermal cycling processes.