Correlative High‐Resolution Mapping of Strain and Charge Density in a Strained Piezoelectric Multilayer

A key to strain engineering of piezoelectric semiconductor devices is the quantitative assessment of the strain‐charge relationship. This is particularly demanding in current InGaN/GaN‐based light‐emitting diode (LED) designs as piezoelectric effects are known to degrade the device performance. Using the state‐of‐the‐art inline electron holography, we have obtained fully quantitative maps of the two‐dimensional strain tensor and total charge density in conventional blue LEDs and correlated these with sub‐nanometer spatial resolution. We show that the In_0.15Ga_0.85N quantum wells are compressively strained and elongated along the polar growth direction, exerting compressive stress/strain on the GaN quantum barriers. Interface sheet charges arising from a polarization gradient are obtained directly from the strain data and compared with the total charge density map, quantitatively verifying only 60% of the polarization charges are screened by electrons, leaving a substantial piezoelectric field in each In_0.15Ga_0.85N quantum well. The demonstrated capability of inline electron holography provides a technical breakthrough for future strain engineering of piezoelectric optoelectronic devices.     

Colonization and Infection of the Skin by S. aureus: Immune System Evasion and the Response to Cationic Antimicrobial Peptides

Staphylococcus aureus (S. aureus) is a widespread cutaneous pathogen responsible for the great majority of bacterial skin infections in humans. The incidence of skin infections by S. aureus reflects in part the competition between host cutaneous immune defenses and S. aureus virulence factors. As part of the innate immune system in the skin, cationic antimicrobial peptides (CAMPs) such as the β-defensins and cathelicidin contribute to host cutaneous defense, which prevents harmful microorganisms, like S. aureus, from crossing epithelial barriers. Conversely, S. aureus utilizes evasive mechanisms against host defenses to promote its colonization and infection of the skin. In this review, we focus on host-pathogen interactions during colonization and infection of the skin by S. aureus and methicillin-resistant Staphylococcus aureus (MRSA). We will discuss the peptides (defensins, cathelicidins, RNase7, dermcidin) and other mediators (toll-like receptor, IL-1 and IL-17) that comprise the host defense against S. aureus skin infection, as well as the various mechanisms by which S. aureus evades host defenses. It is anticipated that greater understanding of these mechanisms will enable development of more sustainable antimicrobial compounds and new therapeutic approaches to the treatment of S. aureus skin infection and colonization.     

Predicted Ligands for the Human Urotensin‐II G Protein‐Coupled Receptor with Some Experimental Validation

Human Urotensin‐II (U‐II) is the most potent mammalian vasoconstrictor known. 1 Thus, a U‐II antagonist would be of therapeutic value in a number of cardiovascular disorders. 2 Here, we describe our work on the prediction of the structure of the human U‐II receptor (hUT₂R) using GEnSeMBLE (GPCR Ensemble of Structures in Membrane BiLayer Environment) complete sampling Monte Carlo method. With the validation of our predicted structures, we designed a series of new potential antagonists predicted to bind more strongly than known ligands. Next, we carried out R‐group screening to suggest a new ligand predicted to bind with 7 kcal mol^?1 better energy than 1‐{2‐[4‐(2‐bromobenzyl)‐4‐hydroxypiperidin‐1‐yl]ethyl}‐3‐(thieno[3,2‐b]pyridin‐7‐yl)urea, the designed antagonist predicted to have the highest affinity for the receptor. Some of these predictions were tested experimentally, validating the computational results. Using the pharmacophore generated from the predicted structure for hUT₂R bound to ACT‐058362, we carried out virtual screening based on this binding site. The most potent hit compounds identified contained 2‐(phenoxymethyl)‐1,3,4‐thiadiazole core, with the best derivative exhibiting an IC₅₀ value of 0.581 μM against hUT₂R when tested in vitro. Our efforts identified a new scaffold as a potential new lead structure for the development of novel hUT₂R antagonists, and the computational methods used could find more general applicability to other GPCRs.     

Enhancement of antireflection property of silicon using nanostructured surface combined with a polymer deposition

Silicon (Si) nanostructures that exhibit a significantly low reflectance in ultraviolet (UV) and visible light wavelength regions are fabricated using a hydrogen etching process. The fabricated Si nanostructures have aperiodic subwavelength structures with pyramid-like morphologies. The detailed morphologies of the nanostructures can be controlled by changing the etching condition. The nanostructured Si exhibited much more reduced reflectance than a flat Si surface: an average reflectance of the nanostructured Si was approximately 6.8% in visible light region and a slight high reflectance of approximately 17% in UV region. The reflectance was further reduced in both UV and visible light region through the deposition of a poly(dimethylsiloxane) layer with a rough surface on the Si nanostructure: the reflectance can be decreased down to 2.5%. The enhancement of the antireflection properties was analyzed with a finite difference time domain simulation method.     

Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition

Growing Ga₂O₃ dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga₂O₃ nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to the typical synthesis temperature of above 1,000°C as reported by other methods. In this work, the prepared β-Ga₂O₃ nanowires are mainly composed of Ga and O elements with an atomic ratio of approximately 2:3. Importantly, they are highly crystalline in the monoclinic structure with varied growth orientations in low-index planes. The bandgap of the β-Ga₂O₃ nanowires is determined to be 251 nm (approximately 4.94 eV), in good accordance with the literature. Also, electrical characterization reveals that the individual nanowire has a resistivity of up to 8.5 × 10⁷ Ω cm, when fabricated in the configuration of parallel arrays, further indicating the promise of growing these highly insulating Ga₂O₃ materials in this III-V nanowire-compatible growth condition.

PACS

77.55.D; 61.46.Km; 78.40.Fy     

Behaviour of uni‐axially loaded concrete‐filled‐steel‐tube columns confined by external rings

Concrete‐filled‐steel‐tube (CFST) columns have been widely adopted for column construction of tall buildings due to its superior strength and ductility performance contributed by the composite action. However, this beneficial composite action cannot be fully developed at early elastic stage as steel dilates more than concrete and thereby causing imperfect interface bonding. Hence, it reduces the elastic strength and stiffness of the CFST columns. To resolve the problem, external confinement in the form of steel rings is proposed in this study to restrict the lateral dilation of concrete and steel at initial elastic stage. In this paper, CFST columns of various dimensions cast with normal‐strength or high‐strength concrete and installed with external steel rings were tested under uni‐axial compression. From the results, it was evident that (a) the external steel rings could restrict the lateral dilation of CFST columns and improve the interface bonding condition and (b) externally confined CFST columns had uni‐axial strength and stiffness larger than those of unconfined CFST columns. With the experimental results, an analytical model taking into account the confining effects of steel tube and rings has been developed to predict the uni‐axial strength of ring‐confined CFST columns. Copyright © 2012 John Wiley & Sons, Ltd.     

Chip to Chip Bonding Using Cu Bumps Capped with Thin Sn Layers and the Effect of Microstructure on the Shear Strength of Joints

Chip to chip bonding techniques using Cu bumps capped with thin solder layers have been frequently applied to 3D chip stacking technology. We studied the effect of joint microstructure on shear strength. Joints were formed by joining Sn/Cu bumps on a Si die and Sn/Cu layers on another Si die at 245–330°C using a thermo-compression bonder. Three different types of microstructures were fabricated in the joints by controlling the bonding temperature and time, (1) a Sn-rich phase with a Cu₆Sn₅ phase at the Cu interfaces, (2) a Cu₆Sn₅ phase in the interior with a Cu₃Sn phase at the Cu interfaces, and (3) one single Cu₃Sn phase throughout the whole joint. The joint having a single Cu₃Sn phase had the highest shear strength. Specimens were aged up to 2000 h at 150°C and 180°C. During aging, the microstructures of all joints were transformed in a single Cu₃Sn phase. The shear strength of the joints was very sensitive to the formation of Cu₃Sn and microvoids. Microvoids formed in the solder joints with a Cu₆Sn₅ phase with and without a Sn-rich phase during aging and decreased the shear strength of the joints. Conversely, aging did not induce the formation of microvoids in the joints which originally had only a Cu₃Sn phase and the shear strength was not decreased.     

EBSD Investigation of Cu-Sn IMC Microstructural Evolution in Cu/Sn-Ag/Cu Microbumps During Isothermal Annealing

The microstructural evolution of Cu/Sn-Ag (~5 μm)/Cu Cu-bump-on-line (CuBOL) joints during isothermal annealing at 180°C was examined using a field-emission scanning electron microscope equipped with an electron backscatter diffraction (EBSD) system. Cu₆Sn₅ and Cu₃Sn were the two key intermetallic compound (IMC) species that appeared in the CuBOL joints. After annealing for 24 h (= t), the solder had completely converted to Cu-Sn IMCs, forming an “IMC” joint with Cu/Cu₃Sn/Cu₆Sn₅/Cu₃Sn/Cu structure. EBSD analyses indicated that the preferred orientation of the hexagonal Cu₆Sn₅ (η) was $ (2\bar{1}\bar{1}3) $ , while the preferred orientation was (100) for the monoclinic Cu₆Sn₅ structure (η′). Upon increasing t to 72 h, Cu₆Sn₅ entirely transformed into Cu₃Sn, and the IMC joint became Cu/Cu₃Sn/Cu accordingly. Interestingly, the grain size and crystallographic orientation of Cu₃Sn displayed location dependence. Detailed EBSD analyses in combination with transmission electron microscopy on Cu₃Sn were performed in the present study. This research offers better understanding of crystallographic details, including crystal structure, grain size, and orientation, for Cu₆Sn₅ and Cu₃Sn in CuBOL joints after various annealing times.     

Optimization of the Ni(P) Thickness for an Ultrathin Ni(P)-Based Surface Finish in Soldering Applications

The effects of the Ni(P) thickness δ _Ni(P) on the interfacial reaction between an Sn-3Ag-0.5Cu solder and an Au/Pd(P)/Ni(P)/Cu pad (thickness: 0.05/0.05/0.1–0.3/20 μm) and the resulting mechanical properties were investigated using scanning electron microscopy equipped with an electron backscatter diffraction system, a focused ion beam system, electron probe microanalysis, and high-speed ball shear (HSBS) testing. Regardless of δ _Ni(P), all of the Au/Pd(P)/Ni(P) surface finishes examined were completely exhausted in one reflow, exposing the Cu pad underneath the solder. Cu₆Sn₅ dissolved with various Ni contents, termed (Cu,Ni)₆Sn₅, was the dominant intermetallic compound (IMC) species at the solder/Cu interface. Additionally, Ni₂SnP and Ni₃P IMCs might form with the (Cu,Ni)₆Sn₅ in the thick Ni(P) case, i.e., δ _Ni(P) = 0.3 μm, and the two IMCs (Ni₂SnP and Ni₃P) were gradually eliminated from the interface after multiple reflows. A mass balance analysis indicated that the growth of the Ni-containing IMCs, rather than the dissolution of the metallization pad, played a key role in the Ni(P) exhaustion. The HSBS test results indicated that the mechanical strength of the solder joints was also δ _Ni(P) dependent. The combined results of the interfacial reaction and the mechanical evaluation provided the optimal δ _Ni(P) value for soldering applications.