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Abstract Heavy oil cold production is faced with the foamy oil phenomenon: while extracted, a heavy crude oil is submitted to a depletion that can induce the formation of dispersed gas bubbles and makes it appear as a foam. This situation results in a change of the flow properties of the live oil that is still debated: correlations predict a decrease or an increase in the gas bubble-dispersed oil viscosity with the gas volume fraction. We attempted to improve the understanding of the foamy oil behavior through rheological measurements. A live oil was depleted inside the pressure cell of a controlled stress rheometer. The occurrence of bubbles was checked and visualized with x-ray scanning experiments. Viscosity was continuously measured using oscillatory and continuous tests. This particular experimental approach allowed us to successfully study the rheological behavior of a foamy oil in relationship with the two main parameters, which are the composition and the viscosity of the crude oils. A theoretical model describing the viscosity of a foamy oil has been established. It takes into account both first-order kinetics of appearance and release of bubbles in oil and a basic suspension model. Results from this model are in agreement with experimental data obtained from different heavy crude oils. 相似文献
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We report measurements to 500°C of resistivity and Hall mobility in Sn-doped, n-type GaP grown by liquid phase epitaxy. Samples
with room-temperature carrier densities between 1 × 1016 and 1 × 1018cm−3 were studied. Mobilities were in the range 100–180 cm2/V-sec at room temperature and in the range 27–35 cm2/V-sec at 400°C. Carrier densities increased by only about a factor of two with increasing temperature. Theoretical fits to
the mobility data were made by considering contributions from intervalley, polar-optic, acoustic-deformation-potential, and
ionlzed-impurity scattering mechanisms. Our results confirm the utility of GaP for high-temperature device applications and
provide important information on electrical parameters needed for device modeling and design. 相似文献
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