Delayed hypersensitivity in the chronic cholera vibrio carrier state in animals with an absence of normal microflora

The development of allergy in germ-free rats in chronic vibriocarriership was studied. The formation of specific delayed type hypersensitivity was found to occur to a limited extent in the animals devoid of normal microflora. The picture of hyperergic inflammation was revealed in the lymph nodes of vibriocarrier rats, the test for specific allergen being positive.     

Erythroid colony formation (CFUe) in fetal liver and adult bone marrow and spleen from the mouse

The methyl cellulose modification of the CFUe technique has been applied to 14 day fetal liver and adult bone marrow and spleen from CBA/CA mice. Optimized doses of fetal calf serum, alpha-thioglycerol, erythropoietin and cell suspensions have been obtained from dose response curves in order to standardize the technique. The slopes of the erythropoietin and cell dose response curves indicate a greater sensitivity by fetal liver to the hormone than bone marrow or spleen. The proportion of cells in the DNA synthesis phase of the cell cycle, as measured by the CFUe technique, has been estimated by administering hydroxyurea. Two hours after the drug was injected, 89% of fetal liver cells, 71% of bone marrow cells and 81% of spleen cells were found to be in the S-phase.     

Fe304／Au复合纳米材料的制备及SERS研究

采用化学共沉淀法制备Fe3O4,通过对Fe3O4的表面处理后,将纳米金组装在Fe3O4表面,制备Fe3O4／Au复合磁性纳米材料。利用透射电子显微镜（TEM）对复合磁性纳米材料的形貌进行了表征,通过紫外一可见吸收光谱和拉曼光谱仪对磁性纳米材料的表面增强拉曼散射光谱进行表征研究,采用铷硼磁铁对磁性纳米材料的磁性进行初步研究。实验结果表明：复合磁性纳米颗粒既具有磁性又具有贵金属光谱特性;纳米金能很好地改善Fe3O4磁性纳米颗粒的表面增强拉曼散射活性。     

“微电子材料加工原理与技术”课程教学方法初探

针对“微电子材料加工原理与技术”课程多学科交融、知识更新快的特点,选取其中教学重点和难点之一的光刻技术进行教学探讨。结合课程教学的学科基础,采用系统讲授法和范例教学法相结合,以及用多媒体动画、生产实录视频演示等方法弥补课堂讲授之不足,可提高课堂教学效果和学生的学习兴趣,加深学生对多学科知识的综合理解。     

PVC/环氧树脂E51共混物性能的研究

以504及554/504分别作为固化剂,采用锥形双螺杆挤出机实现了PVC与环氧树脂的熔融共混,制备了PVC/环氧树脂E51共混物。固化剂用量为环氧树脂E51用量的80%时,研究了环氧树脂E51用量、固化剂组成及固化时间对PVC/环氧树脂E51共混物力学性能及维卡软化温度的影响。结果表明:以504及554/504为固化剂,少量环氧树脂E51(4份以内)加入PVC后,有助于提高共混物的拉伸强度、弯曲强度;当环氧树脂E51为2份、固化时间为8h时,共混物维卡软化温度达到最大值100.2℃,比纯PVC高出16.5℃。     

PHEM T 材料MBE 生长及其应用

我们对PHEMT材料中应变沟道InGaAs层生长条件进行了优化,并采用了LT-GaAs中缺陷扩散的阻挡层.功率PHEMT器件结果为在栅长Lg=1.0μ时,跨导g\-m≥400 ms/mm,BV\-\{DS\}>1 5V,BV\-\{GS\}>10V表明该材料有较好的性能.作为材料的缓冲层,结果表明器件性能优良 ,是国内最好结果.     

GaN 基材料生长及其在光电器件领域的应用

GaN具有禁带宽，热导率高，电子饱和漂移速度大和介电常数小等特点，在高度亮发光二极管，短波长激光二极管，高性能紫外探测器和高温，高频，大功率半导体器件等领域有着广泛的应用前景。本文介绍了GaN基半导体材料的制备方法，异质结构以及在光电子和微电子器件领域的应用，并讨论了今后的发展趋势。