Earing in cup drawing face-centered cubic single crystals and polycrystals

A simple model of flange behavior during cup drawing was used to predict the earing profile of deep-drawn cups. The relationship between yield surface shape and earing tendency was established, with plane stress yielding corresponding to no hold-down pressure on the flange and plane strain corresponding to no thickening. Using the Schmid law, the earing model was applied to the case of a single crystal in cube position and compared to Tucker’s well-known results.^[6] For the plane strain case, good agreement was obtained with the experiment; but for plane stress, the predicted profile did not agree with the experimental one. Using the Taylor/ Bishop and Hill (TBH) theory^[8,9] and measured crystallite orientation distribution functions (CODF), the model was applied to the case of high-purity aluminum sheet with various cold-rolling reductions (35, 60, 80, and 90 pct). The major experimental trends were again correctly predicted by the plane strain case.     

A diagonalized multilevel fast multipole method with spherical harmonics expansion of the k-space Integrals

Diagonalization of the fast multipole method (FMM) for the Helmholtz equation is usually achieved by expanding the multipole representation in propagating plane waves. The resulting k-space integral over the Ewald sphere is numerically evaluated. Storing the k-space quadrature samples of the method of moments (MoM) basis functions constitutes a large portion of the overall memory requirements of the resulting algorithm for solving the integral equations of scattering and radiation problems. In this paper, it is proposed to expand the k-space representation of the basis functions by spherical harmonics in order to reduce the sampling redundancy introduced by numerical quadrature rules. Aggregations, plane wave translations, and disaggregations in the realized multilevel fast multipole method (MLFMM) are carried out using the k-space samples of a numerical quadrature rule. However, the incoming plane waves on the finest MLFMM level are expanded in spherical harmonics again. Thus, due to the orthonormality of spherical harmonics, the testing integrals for the individual testing functions are simplified into series over products of spherical harmonics expansion coefficients. Overall, the resulting MLFMM can save a considerable amount of memory without compromising accuracy and numerical speed.     

Effect of Organic Additives on Electrochemical Surface Precipitation and Polymorphism of CaCO3

The inhibition effect of three organic additives on the precipitation and polymorphism of CaCO₃ deposited on gold surfaces was investigated using electrochemical and microscopic techniques. Additives, two polyacrylic acid (PAA) polymers with different molecular weights (Mw 2100, Mw 30,000), and 1,2,4,5‐benzenetetracarboxylic acid (BTCA), were either added to the solution before or during deposition. In the presence of 100 ppm of one of the three additives in solution, almost no scale was observed on the surface for at least 24 hours. In the presence of lower concentrations of PAA Mw 2100, only distorted calcite crystals were obtained while with PAA Mw 30,000 the polymorph was spherical vaterite. A mixture of calcite and vaterite was observed with the BTCA additive. Addition of the polymers inhibits further nucleation and growth even if added after partial deposition of CaCO₃ while BTCA has no effect once nucleation has started. The results indicate that the inhibit ion effect of the PAA polymers is due to adsorption on the electrode surface while the effect of BTCA is related to chelation of calcium ions in solution.     

Self-Consistent Effects on the Starting Current of Gyrotron Oscillators

Self-consistent effects on the starting current of gyrotron oscillators are examined. Field profiles in the open cavity are shown to be sensitive to the interaction dynamics. This can either significantly raise or lower the oscillation threshold, particularly for the low-Q modes. The transition from resonant-mode oscillations at the low magnetic field to backward-wave oscillations at the high magnetic field is demonstrated.     

Short-term frequency stability of clock generators for multigigahertz rapid-single-flux quantum digital circuits

Superconducting digital systems based on Josephson junctions have generally used a synchronous timing strategy. A master clock signal is used to delimit a data window during which the system changes state and data is transferred from one block to the next. The temporal stability of the clock signal has a profound effect on the performance of rapid single flux quantum (RSFQ) digital systems. In particular, short-term clock fluctuations, or clock jitter, can degrade system performance due to the hazard of timing constraint violations. The successful development of large-scale RSFQ digital systems will require highly stable multigigahertz on-chip clock sources. To meet this need, methods for characterizing and measuring the short-term stability of such sources are required. We identify the relevant figure of merit to characterize and compare various clocks: the cycle-to-cycle standard deviation of the clock periods. We present experimental techniques for the measurement of this figure of merit and apply them to the measurement of jitter in a clock generator used often in RSFQ systems, the ring oscillator. High-frequency phase noise measurements found the jitter of a 9.6-GHz clock to be in the range from 0.6% to 0.36% of the clock period. The measured values of clock jitter fell within the 95% confidence interval of our stochastic circuit simulations. This was sufficient evidence to conclude that thermal noise from the resistors in the circuit may be the dominant source of jitter in the ring oscillator.     

Defect-free sintering of two material powder injection molded components Part II Model

A defect-free, two-material component can be obtained via co-sintering by suitably altering the powder characteristics or compositions, as demonstrated in Part I. In this paper, a model to ascertain the suitability of material systems to be co-sintered without defects such as delamination or interface pores is presented. The model is based on the management of the stress induced due to the difference in shrinkage and an analysis of the in situ strength of the weaker material during sintering. Tool steel in combination with stainless steel admixed with boron and Fe-2Ni admixed with boron are two systems used to validate the model. The predictions of the model are in good agreement with the observations.     

Designing and prototyping data-intensive applications in the Logresand Algres programming environment

The authors present an environment and a methodology for the design and rapid prototyping of data-intensive software applications, i.e., applications which perform substantial retrieval and update activity on persistent data. In the approach, the application is formally specified using Logres, a database language which combines object-oriented data modeling and rule-based programming. These specifications are translated into Algres, an extended relational algebra, thus yielding a rapid executable prototype. Algres programs embedded into a conventional programming language interface may be converted to conventional programs operating on a commercial relational system. This methodology helps automate the conversion from declarative requirements to imperative code, performing several tasks fully automatically and reducing the probability of human errors, while integrity constraints and application specifications are expressed in a declarative language, at a very high level of abstraction     

Comparison between the effects of positive noncatastrophic HBM ESDstress in n-channel and p-channel power MOSFETs

The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain