A New Criteria Decision Applied on the Primary Synchronization in the DS-WCDMA Interface of the UMTS System

In DS-WCDMA mobile systems such the UMTS, asynchronous cell site operation,assigning different long spreading code to each cell, yields the advantageof flexible system deployment. We can design an indoor system basedon an outdoor one. However, in general, much longer search time isrequired in asynchronous operation than in synchronous. This paperproposes three techniques to take decisions about synchronizationbased on observation of correlated signals. Classical decision criterialike maximum and threshold criterion are presented. A new decisioncriteria that we call Threshold&Max combined decision criteriais analyzed. The results of this new introduced technique is comparedwith the classical ones.     

0. 6 􀀁m CMOS 雷达天线专用控制芯片设计

雷达系统中天线控制电路完成上位机的初始化和扫描角度控制,要求具有高可靠性和低静态电流,用专用集成电路进行设计具有明显优势.采用Verilog HDL语言描述了系统的逻辑功能,超前进位结构的加/减法器提高了电路的工作速度.利用0.6 μm CMOS工艺完成了天线控制电路的物理实现,芯片面积为1.695 mm×1.631 mm.     

Primary hydration of poly(acrylic acid) sodium salts

Summary The equilibrium water contents of linear poly(acrylic acid) sodium salts with different degrees of neutralisation were found to be dependent on temperature and relative humidity. An octahedral model for the primary hydration of poly(acrylic acid) sodium salts (HIRAOKA and YOKOYAMA 1980) was critically evaluated in the light of these findings and an anomaly in the water uptake versus neutralisation curve at approximately 33% neutralisation was explained by the counterion condensation theory. (MANNING 1979).     

K-winner networks.

A special class of mutually inhibitory networks is analyzed, and parameters for reliable K-winner performance are presented. The network dynamics are modeled using interactive activation, and results are compared with the sigmoid model. For equal external inputs, network parameters that select the units with the larger initial activations (the network converges to the nearest stable state) are derived. Conversely, for equal initial activations, networks that select the units with larger external inputs (the network converges to the lowest energy stable state) are derived. When initial activations are mixed with external inputs, anomalous behavior results. These discrepancies are analyzed with several examples. Restrictions on initial states are derived which ensure accurate K-winner performance when unequal external inputs are used.     

Intelligent identification and control for autonomous guided vehicles using adaptive fuzzy-based algorithms

Fuzzy logic was first suggested as the mechanism by which humans drive cars. This paper addresses the use of fuzzy logic and algorithms towards the intelligent autonomous motion control of land vehicles. To cope with vehicle complexities, internal parametric changes, and with unpredictable environmental effects, the controllers that are presented, whilst heuristic in nature, are self-organizing or self-learning in that they generate automatically by observation an experiential rule base that models the vehicle, and via an appropriate performance index an optimal control rule base that is robust to large parametric changes. The methodology presented is applicable to any complex process which is too difficult to model or control using conventional methods, or which has relied on the experience of a human operator. An overview of fuzzy logic and static fuzzy logic control (akin to expert systems) is provided, together with illustrative examples.     

Tube-shaping unit — A way of improving the quality of shaped tubes

Lenin Dnepropetrovsk Pipe Plant. Translated from Metallurg, No. 8, p. 39, August, 1989.     

Langmuir-Blodgett deposited cadmium gate inverted InP-GaInAs modulation-doped field-effect transistors

We report on the Langmuir-Blodgett film deposition and plasma etching of cadmium distearate on n-Gao.47Ino.53As to form a high-barrier-height Schottky barrier. Using this technique to form the gate electrode, we fabricated a 1?m-gate-length inverted InP-GalnAs modulation-doped field-effect transistor (MODFET) with an extrinsic transconductance of 170mS/mm and a cutoff frequencyfT of 19 GHz.