新型高效而紧凑的白光LED驱动方案

系统设计人员目前面临一个艰巨的挑战,他们需要利用彩色便携式显示屏来最大限度地提升系统功能和效率,同时又要实现成本和尺寸最小化.现在已经到了需要为系统设计师提供一种全新的LED驱动拓扑的时候.     

Growth of InGaN HBTs by MOCVD

The design and growth of GaN/InGaN heterojunction bipolar transistors (HBTs) by metalorganic chemical vapor deposition (MOCVD) are studied. Atomic-force microscopy (AFM) images of p⁺InGaN base layers (∼100 nm) deposited under various growth conditions indicate that the optimal growth temperature is limited to the range between 810 and 830°C due to a trade-off between surface roughness and indium incorporation. At these temperatures, the growth pressure must be kept above 300 Torr in order to keep surface pit density under control. An InGaN graded-composition emitter is adopted in order to reduce the number of V-shaped defects, which appear at the interface between GaN emitter and InGaN base and render an abrupt emitter-base heterojunction nearly impossible. However, the device performance is severely limited by the high p-type base contact resistance due to surface etching damage, which resulted from the emitter mesa etch.     

Propagation considerations for emerging satellite communicationsapplications

The effects of rain and other propagation concerns for new applications areas, currently in operation or planned for implementation by the end of this decade, are described. The areas include: VSAT systems employing low operating margins and/or low elevation angles; traditional communications applications operating with inclined geosynchronous orbits; and mobile and personal communications applications employing networks of low earth orbit (LEO) satellites. Prediction modeling and analysis techniques applicable to these areas are described. Analytical results for a range of operational parameters involving low-margin, low elevation angle, inclined geosynchronous, and LEO systems are presented     

Testing analogue functions using m-sequences

A prototype systems level approach to testing embedded analogue functions in VLSI circuits is described. The technique is self-contained and can be used for wafer, package and field testing. The technique can be easily integrated into a digital test environment. The fault detection capabilities of the method are demonstrated by simulation results.<>     

Terrestrial digital video broadcasting for mobile reception using OFDM

Performance of a system design for digital video broadcasting is examined with emphasis on mobile reception. Orthogonal frequency division multiplexing (OFDM) is used to achieve good bandwidth efficiency and to mitigate the intersymbol interference resulting from the channel delay spread. The resulting equivalent channel including OFDM can be modeled as a flat Rayleigh fading channel plus an interchannel interference (ICI) term due to the channel Doppler spread. This ICI term is analyzed and shown to result in an error floor. Performance improvements due to antenna diversity and trellis-coded modulation (TCM) are given. Finally, multiresolution modulation is discussed as a means of achieving graceful degradation and giving degrees of freedom for further performance improvement.This research was supported by the Multimedia Systems R & D Laboratory, Hitachi, Ltd.     

Energy-Efficient Routing for Frequency-Hop Wireless Networks

The use of adaptive-transmission protocols in wireless, store-and-forward, packet communication networks may result in large differences in the energy requirements of the alternative paths that are available to the routing protocol. Routing metrics can provide quantitative measures of the quality and energy efficiency of the paths from the source to the destination. Such measures are required if the routing protocol is to take advantage of the potential energy savings that are made possible by an adaptive-transmission protocol. An energy-efficient protocol suite for routing and adaptive transmission in frequency-hop wireless networks is described and evaluated, several routing metrics are compared, and tradeoffs among energy efficiency, delay, and packet success probability are investigated.     

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Silicon underpins microelectronics but lacks the photonic capability needed for next‐generation systems and currently relies on a highly undesirable hybridization of separate discrete devices using direct band gap semiconductors. Rare‐earth (RE) implantation is a promising approach to bestow photonic capability to silicon but is limited to internal RE transition wavelengths. Reported here is the first observation of direct optical transitions from the silicon band edge to internal f‐levels of implanted REs (Ce, Eu, and Yb); this overturns previously held assumptions about the alignment of RE levels to the silicon band gap. The photoluminescence lines are massively redshifted to several technologically useful wavelengths and modeling of their splitting indicates that they must originate from the REs. Eu‐implanted silicon devices display a greatly enhanced electroluminescence efficiency of 8%. Also observed is the first crystal field splitting in Ce luminescence. Mid‐IR silicon photodetectors with specific detectivities comparable to existing state‐of‐the‐art mid‐IR detectors are demonstrated.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Reconfigurable Computing for Digital Signal Processing: A Survey

Steady advances in VLSI technology and design tools have extensively expanded the application domain of digital signal processing over the past decade. While application-specific integrated circuits (ASICs) and programmable digital signal processors (PDSPs) remain the implementation mechanisms of choice for many DSP applications, increasingly new system implementations based on reconfigurable computing are being considered. These flexible platforms, which offer the functional efficiency of hardware and the programmability of software, are quickly maturing as the logic capacity of programmable devices follows Moore's Law and advanced automated design techniques become available. As initial reconfigurable technologies have emerged, new academic and commercial efforts have been initiated to support power optimization, cost reduction, and enhanced run-time performance.This paper presents a survey of academic research and commercial development in reconfigurable computing for DSP systems over the past fifteen years. This work is placed in the context of other available DSP implementation media including ASICs and PDSPs to fully document the range of design choices available to system engineers. It is shown that while contemporary reconfigurable computing can be applied to a variety of DSP applications including video, audio, speech, and control, much work remains to realize its full potential. While individual implementations of PDSP, ASIC, and reconfigurable resources each offer distinct advantages, it is likely that integrated combinations of these technologies will provide more complete solutions.     

Spiro Linkage as an Alternative Strategy for Promising Nonfullerene Acceptors in Organic Solar Cells

This work focuses on developing diketopyrrolopyrrole (DPP)‐based small molecular nonfullerene acceptors for bulk heterojunction (BHJ) organic solar cells. The materials, SF‐DPP s, have an X‐shaped geometry arising from four DPP units attached to a spirobifluorene (SF) center. The spiro‐dimer of DPP‐fluorene‐DPP is highly twisted, which suppresses strong intermolecular aggregation. Branched 2‐ethylhexyl (EH), linear n‐octyl (C8), and n‐dodecyl (C12) alkyl sides are chosen as substituents to functionalize the N,N‐positions of the DPP moiety to tune molecular interactions. SF‐DPPEH , the best candidate in SF‐DPP s family, when blended with poly(3‐hexylthiophene) (P3HT) showed a moderate crystallinity and gives a J_sc of 6.96 mA cm^?2, V_oc of 1.10 V, a fill factor of 47.5%, and a power conversion efficiency of 3.63%. However, SF‐DPPC8 and SF‐DPPC12 exhibit lower crystallinity in their BHJ blends, which is responsible for their reduced J_sc. Coupling DPP units with SF using an acetylene bridge yields SF‐A‐DPP molecules. Such a small modification leads to drastically different morphological features and far inferior device performance. These observations demonstrate a solid structure–property relationship by topology control and material design. This work offers a new molecular design approach to develop efficient small molecule nonfullerene acceptors.