QoS‐Guaranteed Multiuser Scheduling in MIMO Broadcast Channels

This paper proposes a new multiuser scheduling algorithm that can simultaneously support a variety of different quality‐of‐service (QoS) user groups while satisfying fairness among users in the same QoS group in MIMO broadcast channels. Toward this goal, the proposed algorithm consists of two parts: a QoS‐aware fair (QF) scheduling within a QoS group and an antenna trade‐off scheme between different QoS groups. The proposed QF scheduling algorithm finds a user set from a certain QoS group which can satisfy the fairness among users in terms of throughput or delay. The antenna trade‐off scheme can minimize the QoS violations of a higher priority user group by trading off the number of transmit antennas allocated to different QoS groups. Numerical results demonstrate that the proposed QF scheduling method satisfies different types of fairness among users and can adjust the degree of fairness among them. The antenna trade‐off scheme combined with QF scheduling can improve the probability of QoS‐guaranteed transmission when supporting different QoS groups.     

The development of a model to estimate the bistatic transmissionloss associated with intersystem interference

This paper presents a new method for evaluating transmission loss, which is a key factor used in determining the impact of interference between terrestrial radio relay systems and Earth-satellite systems operating at the same frequency. The current model used by the CCIR was developed in the early 1970's when system packing density was low and large earth station antennas allowed the consideration of narrow beam approximations, resulting in a small common volume of intersection of the two beams. The recent increase in microwave communications traffic and improvements in technology have meant that smaller earth station antennas, including very small aperture terminals (VSATs), can be employed and hence the model requires revision. Results from the new model proposed are compared with two experimental geometries and good agreement is found     

Monolithically integrated laser/rear-facet monitor arrays withV-groove for passive optical fiber alignment

An InGaAsP/InP laser monolithically integrated with a rear facet monitor and a fiber V-groove has been demonstrated for the first time. The integrated device incorporates an etched-facet laser fabricated using an in situ, multistep, reactive ion etch process. The integrated V-groove, which is etched directly into the InP substrate, is designed to enable passive alignment of an optical fiber to the active region of the laser. Passive coupling efficiencies of 18% and 8% have been obtained using cleaved multimode and single mode fibers, respectively. Responsivities of the rear facet monitor were as high as 0.49 A/W     

The statistical distribution of switch-on delay in single-modesemiconductor lasers I: equilibrium off-condition

The theory of stochastic processes as applied to photon emission and absorption events is used to calculate the distribution of delay in switch-on from a sub-threshold condition in directly modulated semiconductor lasers down to a probability of 10^-10. This involves the derivation of the relative probability distribution of photon number in the laser late enough in the switch-on process such that deterministic relations can be applied thereafter. This distribution, assumed constant in some treatments, is found to change only a little from its initial form, which is a negative binomial, From this one deduces a delay distribution whose width is proportional to the period of the switch-on transient, relatively independently of the precise starting point, but which can be narrowed by injection of additional spontaneous emission. Experiment satisfactorily supports the theory     

Excited-state-absorption cross sections and amplifier modeling inthe 1300-nm region for Nd-doped glasses

The performance of Nd³⁺-doped fibre amplifiers is limited by strong excited-state absorption (ESA) of the signal, and, even for fluorozirconate glasses, ESA prevents the important region below 1320 nm from being used. To quantify this limitation and explore alternative host materials, ESA and stimulated-emission cross sections have been measured for a representative group of glass compositions. These parameters have been used in an accurate fiber-amplifier model to provide the first quantitative comparisons of performance for Nd³⁺ -doped glasses in the 1300-nm band as a function of host     

The static and dynamic characteristics of single and multiplephase-shifted DFB laser structures

The influence of longitudinal mode spatial hole burning (LMSHB) on the performance of distributed feedback (DFB) laser structures is examined in detail. A comprehensive model has been used to interpret the experimental results and to construct a theoretical framework that was utilized to develop more advanced device designs. An increasing side mode intensity with output power, movement of the lasing mode relative to the stopband, and curvature of the light-current characteristic at low power can all be manifestations of the influence of LMSHB on the static device performance. The dynamic behavior can also be affected, with extended wavelength chirp and amplitude patterning effects on the timescale of the effective carrier recombination time being particularly important     

The INTELSAT VII/VIIA generation of global communications satellites

Developed primarily to provide continuation of services from the INTELSAT V satellites in the Pacific Ocean Region, this latest generation of satellites also has utility for operation in other roles. Several new technologies are combined to give cost-effective international satellite communications on a global, regional and domestic basis. This new higher power satellite will form a fundamental part of the INTELSAT global network, having been designed to match the projected traffic demands and future service requirements.     

A 90-nm logic technology featuring strained-silicon

A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl kappa/ CDO for high-performance dense logic is presented. Strained silicon is used to increase saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10% and 25%, respectively. Using selective epitaxial Si/sub 1-x/Ge/sub x/ in the source and drain regions, longitudinal uniaxial compressive stress is introduced into the p-type MOSEFT to increase hole mobility by >50%. A tensile silicon nitride-capping layer is used to introduce tensile strain into the n-type MOSFET and enhance electron mobility by 20%. Unlike all past strained-Si work, the hole mobility enhancement in this paper is present at large vertical electric fields in nanoscale transistors making this strain technique useful for advanced logic technologies. Furthermore, using piezoresistance coefficients it is shown that significantly less strain (/spl sim/5 /spl times/) is needed for a given PMOS mobility enhancement when applied via longitudinal uniaxial compression versus in-plane biaxial tension using the conventional Si/sub 1-x/Ge/sub x/ substrate approach.     

vBNS: not your father's Internet

The very-high-performance Backbone Network Service (vBNS) is an important part of ongoing efforts by government, industry, and academia to push the state of the art in Internet technologies and academic research applications. It is dedicated to serving research and education institutions whose scientific endeavors require networking performance not possible or not practical with commercial network services. Currently, the vBNS is implemented as an IP-over-ATM network-that is, its network layer (layer 3 of the open systems interconnection reference model promulgated by the International Organization for Standardization) runs the Internet Protocol on top of the asynchronous transfer mode protocol. Those protocols, in turn, run on a synchronous optical network (Sonet) OC-12-622.08-Mb/s-infrastructure. Though access was originally limited to five supercomputer centers and four network access points, the National Science Foundation's High-Performance Connections program is now expanding the vBNS to reach over 100 institutions. The vBNS also has connections to other research networks, both within the United States and abroad. Before describing the architecture of the vBNS, the services it provides, and the metrics developed to assess its performance, the article reviews the background against which it came into being. It also briefly discusses how the vBNS relates to the Next Generation Internet (NGI) and Internet2     

Effect of barrier height on the uneven carrier distribution inasymmetric multiple-quantum-well InGaAsP lasers

Four asymmetric multiple-quantum-well (AMQW) laser structures have been grown and tested. The structures demonstrate that carriers are not evenly distributed across the active region of a MQW laser. Wells at the p-side of the active region are preferentially pumped indicating there are more carriers at the p-side of the active region than at the n-side. The structures also demonstrate that decreasing the height of the barriers reduces this effect and results in a more even carrier distribution. Thus, well position and barrier height are shown to be important design parameters for AMQW and conventional MQW lasers