宽低温STN—LCD加热装置的研制

本文介绍了宽低温ＳＴＮ－ＬＣＤ加热装置的设计和制备方法，并对低温加热的实验结果进行了讨论和分析，相应的研究结果表明此法有利于拓宽ＳＴＮ液晶显示器的负温工作范围。     

消光剂TiO_2悬浮液配制工艺优化

讨论了在配制过程中减少凝聚粒子形成的有效措施。分散系统由分散器和弱搅拌组成 ,悬浮液初始浓度为 5 0 % ,分散时间应在 0 .5h以上。莫诺泵最佳转速在 85r min左右 ,球磨后TiO2 大粒子通过离心机分离出去 ,使产品中的大于 10 μm的凝聚粒子数小于 0 .4个 mg。     

Experimental evaluation of the strength distribution of E-glass fibres at high strain rates

A bimodal Weibull distribution function was applied to analyse the strength distribution of glass fibre bundles under tensile impact. The simulation was performed using a one-dimensional damage constitutive model. The results show that there were two concurrent flaw populations in the fracture process. The regression analysis using the bimodal Weibull distribution function was in good agreement with experiment.     

前馈和反馈相结合的控制策略在宝钢线材厂控冷轧线上的应用实践

在详细分析料坯在水箱内冷却热过程特点的基础上，提出了前馈和反馈相结合的水流量优化控制策略，并将该策略应用于宝钢线材厂控冷轧线上。实际运行结果表明：该策略能够合理地控制水箱水流量，从而保证了线材水箱出口处的温度满足工艺要求，大大提高了线材成品的质量。所做工作对国内同类企业有重要的意义。     

东莞市水污染现状及其对策探讨

通过分析东莞市河流、水库、饮用水源地、河库底质污染现状以及1998-2003年部分河道水质变化趋势,找出本地区水污染问题和原因,提出改善水环境的对策措施。     

Degradation Behaviors of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stresses

Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc bias stresses: hot-carrier (HC) stress and self-heating (SH) stress. Under HC stress, device degradation is the consequence of HC induced defect generation locally at the drain side. Under a unified model that postulates, the establishment of a potential barrier at the drain side due to carrier transport near trap states, device degradation behavior such as asymmetric on current recovery and threshold voltage degradation can be understood. Under SH stress, a general degradation in subthreshold characteristic was observed. Device degradation is the consequence of deep state generation along the entire channel. Device degradation behaviors were compared in low V_d-stress and in high V_d-stress condition. Defect generation distribution along the channel appears to be different in two cases. In both cases of SH degradation, asymmetric on current recovery was observed. This observation, when in low V_d-stress condition, is tentatively explained by dehydrogenation (hydrogenation) effect at the drain (source) side during stress