Defect passivation on cast-mono crystalline screen-printed cells

Cast-mono crystalline silicon wafers contain crystallographic defects, which can severely impact the electrical performance of solar cells. This paper demonstrates that applying hydrogenation processes at moderate temperatures to finished screen print cells can passivate dislocation clusters within the cast-mono crystalline silicon wafers far better than the hydrogenation received during standard commercial firing conditions. Efficiency enhancements of up to 2% absolute are demonstrated on wafers with high dislocation densities. The impact of illumination to manipulate the charge state of hydrogen during annealing is investigated and found to not be significant on the wafers used in this study. This finding is contrary to a previous study on similar wafers that concluded increased H^– or H⁰ from laser illumination was responsible for the further passivation of positively charged dangling bonds within the dislocation clusters.     

Does power posing affect gerontechnology adoption among older adults?

Recognising the rise of an aging population and independent living among older adults, many governments and organisations have developed and promoted new technologies in the form of gerontechnologies to support the needs and enhance the well-being of older adults. However, the adoption of products using such technology remains modest among the aging population. This study introduces the notion of power in the form of power posing and examines its impact on new technology adoption, particularly gerontechnology, among older adults. Using an experimental approach on a sample of older adults exposed to an in-house near-field communication-enabled light system, the study finds that high-power poses have a greater and more positive impact on older adults’ perceived ease of use of, perceived usefulness of, and intentions to use gerontechnology than low-power poses. Implications, limitations, and future research directions are discussed.     

Langmuir-Blodgett deposited cadmium gate inverted InP-GaInAs modulation-doped field-effect transistors

We report on the Langmuir-Blodgett film deposition and plasma etching of cadmium distearate on n-Gao.47Ino.53As to form a high-barrier-height Schottky barrier. Using this technique to form the gate electrode, we fabricated a 1?m-gate-length inverted InP-GalnAs modulation-doped field-effect transistor (MODFET) with an extrinsic transconductance of 170mS/mm and a cutoff frequencyfT of 19 GHz.     

A local interpolatory cardinal spline method for the determinationof eigenstates in quantum-well structures with arbitrary potentialprofiles

A numerical method based on a variational approach and local interpolatory cardinal spline (LICS) functions is developed to compute the eigenstates of a quantum well with an arbitrary potential profile. The formulation of this method is straightforward, while the numerical solution is more accurate than results obtained by using other methods in the published literature     

Amplitude, width, and interarrival distributions for noise impulseson intrabuilding power line communication networks

Estimates are presented of probability distributions for the amplitude, width, and interarrival time of noise impulses. These estimates are based on measurements in both industrial and residential buildings and usefully complement the noise spectral density estimates of others. The results are based on measurements with and without specific electrical loads on the 120-V power line network. All measurements are between line and neutral conductors. The harmful effects of power line impulse noise on digital communications are indicated. Some suggestions for combatting these effects are presented, based on the impulse noise measurement results     

Ice-slurry production using direct contact heat transfer

An ice slurry generation system was developed using direct contact heat transfer between water and the coolant, Fluroinert FC-84. The location of the coolant nozzle is an important design consideration to avoid clogging due to freezing of water. An ice fraction of up to about 40 percent was obtained with the nozzle located at the bottom of the ice slurry tank and the jet directed upwards into the water. Two simplified model were developed to extract the heat transfer coefficient between the coolant drops and the water. The first model requires as input the average drop diameter and the residence time while the second model uses the measured drop diameter distribution. The estimated heat transfer coefficients are much smaller than those computed using single-sphere correlations.     

Highly sensitive and selective trimethylamine sensor using one-dimensional ZnO-Cr2O3 hetero-nanostructures

Highly selective and sensitive detection of trimethylamine (TMA) was achieved by the decoration of discrete p-type Cr(2)O(3) nanoparticles on n-type ZnO nanowire (NW) networks. Semielliptical Cr(2)O(3) nanoparticles with lateral widths of 3-8 nm were deposited on ZnO NWs by the thermal evaporation of CrCl(2) at 630 °C, while a continuous Cr(2)O(3) shell layer with a thickness of 30-40 nm was uniformly coated on ZnO NWs at 670 °C. The response (R(a)/R(g): R(a), resistance in air; R(g), resistance in gas) to 5 ppm TMA of Cr(2)O(3)-decorated ZnO NWs was 17.8 at 400 °C, which was 2.4 times higher than that to 5 ppm C(2)H(5)OH and 4.3-8.4 times higher than those to 5 ppm p-xylene, NH(3), benzene, C(3)H(8), toluene, CO, and H(2). In contrast, both pristine ZnO and ZnO (core)-Cr(2)O(3) (shell) nanocables (NCs) showed comparable responses to the different gases. The highly selective and sensitive detection of TMA that was achieved by the deposition of semielliptical Cr(2)O(3) nanoparticles on ZnO NW networks was explained by the catalytic effect of Cr(2)O(3) and the extension of the electron depletion layer via the formation of p-n junctions.     

Characteristics improvement of metalorganic chemical vapor deposition grown MgZnO films by MgO buffer layers

MgZnO films with a small quantity of Mg were grown on c-sapphire substrates coated with a thin MgO buffer layers by metalorganic chemical vapor deposition. The MgO buffer layer causes improvement in the structural, optical, and electrical properties of subsequently deposited MgZnO thin films, when compared to MgZnO films deposited without a buffer layer. The MgZnO films with a MgO buffer layer grown at 330 °C showed the best performance. Transmission electron microscopy revealed that the cubic phase MgO buffer layer promoted the epitaxial behavior of MgZnO, where the planar relationships of the wurtzite-MgZnO/cubic-MgO/sapphire heterostructures mainly were MgZnO(0001)//MgO(001)//sapphire(0001) and MgZnO(11?00)//MgO(110)//sapphire(112?0). It resulted in lower lattice mismatch between MgO and MgZnO by domain epitaxy of 2/1 and enhancement in preferred growth of the MgZnO films along the c-axis.