High performance AlyGa1−yAs-GaAs-lrxGa1−xAs quantum well lasers defined by silicon-oxygen impurity-induced layer disordering

In these experiments impurity-induced layer disordering (IILD) utilizing chemical reduction of SiO₂ by Al (from Al_0.8Ga_0.2As) is employed to generate Si and O to effect layer disordering. The SiO₂-Al_0.8Ga_0.2As reaction is studied with respect to annealing ambient. By controlling the extent of disordering via As₄ overpressure, closely spaced (∼1μm) Si-O IILD buried heterostructure lasers can be optically coupled or uncoupled. Direct observation of O incorporation into the buried layers is shown using secondary ion mass spectroscopy (SIMS). The thermal stability of separate-confinement Al_yGa_1−yAs-GaAs-In_xGa_1−xAs quantum well heterostructure (QWH) laser crystals is investigated using SIMS, transmission electron microscopy (TEM), and photoluminescence (PL) measurements. The data show that the thermal stability of a strained-layer In_0.1Ga_0.9As quantum well (QW) is strongly dependent upon: (1) the layer thickness and heterointerfaces of the Al_yGa_1−yAs-GaAs waveguide layers located directly above and below the QW, (2) the type of surface encapsulant employed, and (3) the annealing ambient. Narrow single-stripe (<2μm) lasers fabricated via Si-O diffusion and layer disordering exhibit low threshold currents (I_th ∼ 4 mA) and differential quantum efficiencies,η, of 22% per facet under continuous (cw) room-temperature operation.     

Network Discovery and Verification

Due to its fast, dynamic, and distributed growth process, it is hard to obtain an accurate map of the Internet. In many cases, such a map-representing the structure of the Internet as a graph with nodes and links-is a prerequisite when investigating properties of the Internet. A common way to obtain such maps is to make certain local measurements at a small subset of the nodes, and then to combine these in order to "discover" (an approximation of) the actual graph. Each of these measurements is potentially quite costly. It is thus a natural objective to minimize the number of measurements which still discover the whole graph. We formalize this problem as a combinatorial optimization problem and consider it for two different models characterized by different types of measurements. We give several upper and lower bounds on the competitive ratio (for the online network discovery problem) and the approximation ratio (for the offline network verification problem) in both models. Furthermore, for one of the two models, we compare four simple greedy strategies in an experimental analysis     

A layered modeling and simulation architecture for agent-basedsystem development

The paper proposes a layered architectural framework to support agent based system development in a collaborative, multidisciplinary engineering setting. This architecture is viewed from two distinct perspectives. First, the environment must enable agent based modeling and simulation. Second, it should support concurrent (team oriented) engineering. The main focus is on the proposed layered architecture delineating various needs of an agent based system, thus supporting incremental specification design, implementation, and testing. In our discussions, we distinguish between performing agents and simulated agents. The former refers to agents as they are performing their tasks in real-world settings. The latter refers to agents that have their behavior simulated in a virtual environment. In these terms, the proposed framework is intended to form the basis for environments that support development of agents, in both performance and simulation modes, as well as in hybrid combination (both performing and simulated agents interacting at the same time). The proposed framework is a step toward realization of agent based systems under the umbrella of the simulation based acquisition (SBA) initiative of the US Department of Defense     

Design of 50-nm vertical MOSFET incorporating a dielectric pocket

A new architecture for a vertical MOS transistor is proposed that incorporates a so-called dielectric pocket (DP) for suppression of short-channel effects and bulk punch-through. We outline the advantages that the DP brings and propose a basic fabrication process to realize the device. The design issues of a 50-nm channel device are addressed by numerical simulation. The gate delay of an associated CMOS inverter is assessed in the context of the International Technology Roadmap for Semiconductors and the vertical transistor is seen to offer considerable advantages down to the 100-nm node and beyond due to the dual channels and the ability to produce a 50-nm channel length with more relaxed lithography.     

CO/sub 2/ laser processing of alumina (Al/sub 2/O/sub 3/) printed circuit board substrates

We report the results of an investigation of the laser-material interaction processes involved in laser drilling of alumina, through the use of an enhanced peak power (2.5 kW) CO/sub 2/ laser and novel temporal pulse formats. Peak power was varied from 30 W to 2 kW for pulses of constant energy to observe the effect produced on scribe depth. High-speed videography of hole formation has been combined with microscopic analysis to investigate the key processes involved in laser processing of alumina. Plasma screening was observed for short, high peak power laser pulses, and optimal scribing was achieved in the weakly plasma absorbing regime. A new processing technique for scribing alumina has been developed, which exploits the fast response of the laser to produce novel temporal pulse shapes, which can be modified to generate cleaner holes. Scribe speeds of up to 280 mm/spl middot/s/sup -1/ were obtained for scribe holes >200 /spl mu/m deep and 150 /spl mu/m apart, with no material plugging the hole, in 0.635-mm-thick 96% alumina.     

Shorted fractal Sierpinski monopole antenna

This paper describes novel configurations of shorted fractal Sierpinski gasket antenna. The antenna uses half the structure of a conventional Sierpinski gasket antenna and is folded over to be parallel to the ground plane, to form an element similar to that of the inverted L antenna. A quasi log periodic resonance behavior is obtained with a shorting pin placed at the far end of the antenna. Several configurations are shown and a design using two shorting pins which improves the bandwidth at the fundamental band is also demonstrated.     

Three-dimensional millimeter-wave imaging for concealed weapondetection

Millimeter-wave imaging techniques and systems have been developed at the Pacific Northwest National Laboratory (PNNL), Richland, WA, for the detection of concealed weapons and contraband at airports and other secure locations. These techniques were derived from microwave holography techniques that utilize phase and amplitude information recorded over a two-dimensional aperture to reconstruct a focused image of the target. Millimeter-wave imaging is well suited for the detection of concealed weapons or other contraband carried on personnel since millimeter-waves are nonionizing, readily penetrate common clothing material, and are reflected from the human body and any concealed items. In this paper, a wide-bandwidth three-dimensional holographic microwave imaging technique is described. Practical weapon detection systems for airport or other high-throughput applications require high-speed scanning on the order of 3 to 10 s. To achieve this goal, a prototype imaging system utilizing a 27-33 GHz linear sequentially switched array and a high-speed linear scanner has been developed and tested. This system is described in detail along with numerous imaging results     

Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials

Metal-oxide-semiconductor capacitors based on HfO₂ gate stack with different metal and metal compound gates (Al, TiN, NiSi and NiAlN) are compared to study the effect of the gate electrode material on the trap density at the insulator–semiconductor interface.C–V and G–ω measurements were made in the frequency range from 1 kHz to 1 MHz in the temperature range 180–300 K. From the maximum of the plot G/ω vs. ln(ω) the density of interface states was calculated, and from its position on the frequency axis the trap cross-section was found. Reducing temperature makes it possible to decrease leakage current through the dielectric and to investigate the states located closer to the band edge.The structures under study were shown to contain significant interface trap densities located near the valence band edge (around 2×10¹¹ cm⁻²eV⁻¹ for Al and up to (3.5–5.5)×10¹² cm⁻² eV⁻¹ for other gate materials). The peak in the surface state distribution is situated at 0.18 eV above the valence band edge for Al electrode. The capture cross-section is 5.8×10⁻¹⁷ cm² at 200 K for Al–HfO₂–Si structure.     

The Impact of Political Talk Radio Exposure on Attributions About the Outcome of the 1996 U.S. Presidential Election

This study investigates the media's potential to affect audiences' interpretations of news events. It compares perceptions of the causes of the 1996 presidential election outcome across four media consumption groups: listeners to the program of Rush Limbaugh, listeners to other political talk radio, consumers of mainstream news media, and nonconsumers of news media. Limbaugh listeners were more likely to discount substantive election explanations than were consumers of other types of political talk radio, consumers of mainstream news media, and nonconsumers of news media. These differences in interpretation parallel differences between the content of his program and that of other media.     

The impact of a nonideal return path on differential signalintegrity

Printed circuit board transmission lines propagating high-speed digital signals are susceptible to nonideal return paths which may affect signal integrity. In an attempt to clarify this complex issue, this paper presents a study of differential signal integrity issues for the familiar situation in which two coupled microstrip traces are in close proximity to a common reference plane. Differential signaling on coupled microstrip lines and stripline configurations are investigated. Finite-difference time domain simulations are used to demonstrate the impact a nonideal return path can have on differential signal integrity