Design and evaluation of an Ethernet-based residential network

When the information superhighway arrives at the neighborhood, a residential network will connect home appliances to the community access network. These appliances include personal computers, printers, and video clients. Among all local-area network (LAN) protocols, Ethernet is the most economic and the most popular. The unique characteristics of residential networks call for new performance studies. A residential network typically has few nodes and runs different applications than business and academic LANs. Consequently, residential networks have traffic characteristics different from the subject of existing studies. We constructed a residential network testbed to collect typical application traffic statistics. Additional live traffic characterization was obtained from campus networks. Also, we investigated the suitability of Ethernet for video distribution through simulation. This paper discusses the design issues for residential networks and presents a network design that is based on Ethernet technology. Traffic models are established from the actual traffic traces and used for the performance evaluation of residential networks. Furthermore, several future data traffic scenarios are considered with bandwidth up to 6 Mb/s by scaling up current data traffic. The simulation results of the performance suggest that Ethernet can be used as a cost-effective residential network for video and data communications     

Changes in the opto-electronic properties of CuInSe2 following ion implantation

The development of efficient thin-film solar cells based on CuInSe₂ absorber layers has encouraged fundamental research on both thin films and single crystals of this chalcopyrite semiconducting compound. The resistance to radiation and ion bombardment is of technical importance particularly for a material which could find future applications in space photovoltaic power systems. In this paper results are described for an ion implantation study using CuInSe₂ single crystal substrates. Oxygen, helium and neon implantations have produced significant changes in surface resistivity and photoconductivity. Also the near-surface regions ofn-type crystals have been type-converted top-type following ion implantation. It is apparent that the ion implantation process creates defects which affect surface state densities and recombination probabilities. In the case of oxygen there is an additional doping effect caused either by the introduction of acceptor states or by the reduction of the existing donor state population. Following implantation there appears to be an overall decrease in carrier recombination at the surface which leads to an enhanced photoconductive response.     

Effect of interface state trap density on the characteristics of n-type,enhancement-mode,implant-free In0.3Ga0.7As MOSFETs

The effect of interface state trap density, D_it, on the device characteristics of n-type, enhancement-mode, implant-free (IF) In_0.3Ga_0.7As MOSFETs [1], [2] has been investigated using a commercial drift-diffusion (DD) device simulation tool. Methodology has been developed to include arbitrary D_it distributions in the input simulation decks to more accurately fit the measured subthreshold characteristics of recently reported 1.0 μm gate length IF In_0.3Ga_0.7As MOSFETs [3]. The impact of interface states on a scaled 30 nm gate length IF MOSFET is also reported.     

Electrical and optical properties of self-assembled quantum dots

One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two, i.e. quantum wires (QWi) and quantum dots (QDs), in order to realise novel devices that make use of low-dimensional confinement effects.One of the promising fabrication methods is to use self-organised three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. Quantum dots, for example, are believed to provide a promising way for a new generation of optical light sources such as injection lasers. While quantum well structures are already widely used in optoelectronic devices, QWi and QDs appear to be much more difficult to fabricate for this purpose. Some of the electrical and optical properties of self-assembled QDs will be reported in this paper.     

Mid-infrared ring laser

The first mid-infrared ring laser diode based on InAs and operating in the mid-infrared spectral region near 3 /spl mu/m and with a maximum operating temperature of 125 K is reported. The source is based on a symmetrical double heterostructure with large band offsets.     

增加折叠电流保护的电路

对许多需要数安培供电电流的应用而言，三端输出可调线性稳压器有易用．低成本和完全片上过载保护等特点，如美国国家半导体公司的LM317。增加数个元器件可以使三端稳压器具备一种高速度的短路限流能力，从而提高可靠性。限流器可将最大输出电流限制在一个安全的恒定水平IMAX上，避免稳压器的损坏。当出现一个故障状况时，传输晶体管上的功耗近似于VIN×IMAX。要让设计的稳压器能承受过载，就需要谨慎地选择元器件的额定值（经常是留了过大的余地），除非可以在故障发生时降低或折叠（foldback）输出电流。     

Asymptotic Bias and Variance of Conventional Bispectrum Estimates for 2-D Signals

In this paper, we derive the asymptotic bias and variance of conventional bispectrum estimates of 2-D signals. Two methods have been selected for the estimation: the first one – the indirect method – is the Fourier Transform of the weighted third order moment, while the second one – the direct method – is the expectation of the Fourier component product. Most of the developments are known for 1-D signals and the first contribution of this paper is the rigorous extension of the results to 2-D signals. The calculation of the bias of the direct method is a totally original contribution. Nevertheless, we did all calculations (bias and variance) for both method in order to be able to compare the results. The second contribution of this paper consists of the comparison of the theoretical bispectrum estimate bias and variance with the measured bias and variance for two 2-D signals. The first studied signal is the output of a non-minimal phase linear system driven by a non-symmetric noise. The second signal is the output of a non-linear system with Gaussian input data. In order to assess the results, we performed the comparison for both methods with different sets of parameters. We show that the maximum bias coefficient is the one of the 1-D case multiplied by the dimensionality of the signal for both methods. We also show that the estimate variance coefficient is the 1-D case coefficient with a power equal to the signal dimensionality.Received October 21, 2002; Revised December 2003; Accepted March 25, 2004; First Online Version published in December 2004     

Beam-cavity interaction circuit at W-band

In this paper, we describe the design, fabrication, and bench study of a millimeter-wave cavity employed as a relativistic klystron output structure. The oxygen-free electronic-grade copper cavity was prepared by electro-discharge machining and diffusion bonding, and cleaned and tuned to 91.4 GHz. Measured cavity characteristics are presented and compared with theory, including quality factor Q, coupling parameter β, scattering matrix S₁₁, and axial electric field profile E_z. This paper provides the basis for an understanding of the cavity as a transfer structure     

Image segmentation using a texture gradient based watershed transform

The segmentation of images into meaningful and homogenous regions is a key method for image analysis within applications such as content based retrieval. The watershed transform is a well established tool for the segmentation of images. However, watershed segmentation is often not effective for textured image regions that are perceptually homogeneous. In order to segment such regions properly, the concept of the "texture gradient" is introduced. Texture information and its gradient are extracted using a novel nondecimated form of a complex wavelet transform. A novel marker location algorithm is subsequently used to locate significant homogeneous textured or non textured regions. A marker driven watershed transform is then used to segment the identified regions properly. The combined algorithm produces effective texture and intensity based segmentation for application to content based image retrieval.     

Reciprocity in reverberation chamber measurements

Even though reverberation chambers have been used primarily for radiated immunity testing, they are reciprocal devices that are equally applicable for radiated emissions testing. This short paper presents the theory for radiated emissions testing and uses electromagnetic reciprocity theory to demonstrate the link between radiated emissions and immunity testing.