Experimental evaluation of velocity and power estimation forultrasound blood flow imaging, by means of a two-dimensionalautocorrelation approach

This paper evaluates experimentally the performance of a novel axial velocity estimator, the 2D autocorrelator, and its Doppler power estimation counterpart, the 2D zero-lag autocorrelator, in the context of ultrasound color flow mapping. The evaluation also encompasses the well-established 1D autocorrelation technique for velocity estimation and its corresponding power estimator (1D zero-lag autocorrelator), to allow performance comparisons under identical conditions. Clutter-suppressed in vitro data sets from a steady-flow system are used to document the effect of the range gate and ensemble length, noise level and angle of insonation on the precision of the velocity estimates. The same data sets are used to examine issues related to the estimation of the Doppler signal's power. The first-order statistics of power estimates from regions corresponding to flow and noise are determined experimentally and the ability of power-based thresholding to separate flow signals from noise is characterized by means of ROC analysis. In summary, the results of the in vitro evaluation show that the proposed 2D-autocorrelation form of processing is consistently better than the corresponding 1D-autocorrelation techniques, in terms of both velocity and power estimation. Therefore, given their relatively modest implementation requirements, the 2D-autocorrelation algorithms for velocity and power estimation appear to represent a superior, yet realistic, alternative to conventional Doppler processing for color flow mapping     

Structure determination of CaMgGeO4

The crystal structure of CaMgGeO₄ is described. CaMgGeO₄, M_r = 200.9, orthorhombic, Pnam, A = 11.285(5) Å, B = 5.016(2) Å, C = 6.435(2) Å, V = 364.36 ų, Dx = 3.664 Mg/m³.λ(MoK_a = 0.71069 Å, F(000) = 384, room temperature, final R = 0.045 for 1752 observed reflections. The structure is isomorphous with CaMgSiO₄ (monticellite).     

Effect of exponentially graded base doping on the performance ofGaAs/AlGaAs heterojunction bipolar transistors

The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×10¹⁹ cm^-3 at the emitter edge to 5×10¹⁸ cm^-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×10¹⁹ cm^-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40%     

Long-wavelength infrared photoinduced switching of a resonanttunneling diode using the intersubband transition

Voltage switching induced by long-wavelength infrared light from a CO₂ laser was observed using a double-barrier resonant tunneling diode (RTD) biased in the bistable region and the intersubband transition (IT) between the quantum confined states. Possible optoelectronic and all-optical switching applications involving hysteresis are proposed and discussed     

The integrated academic information management system at Columbia-Presbyterian Medical Center.

Over the past seven years, Columbia-Presbyterian Medical Center has been planning and implementing an integrated academic information management system. Accomplishments to date include establishing an institutional information architecture, installing a campus-wide network of workstations, recruiting the staff needed to develop and implement the system, and developing various applications. This paper presents the rationale and steps involved in these accomplishments, as well as data on use of the system so far.     

PMMA tacticity and alumina powder dispersion stability

Summary Sedimentation experiments and X-ray photoelectron spectroscopy (XPS or ESCA) analyses have been used to study the effect of poly(methylmethacrylate) (PMMA) tacticity on aluminum oxide powder dispersion stability in a common solvent medium. The relative trends from sedimentation densities, and from surface analyses after solvent washing show that (PMMA) adsorption is greatest with isotactic polymer, where isotactic>atactic>syndiotactic adsorption. These results suggest that surface adsorption and hence dispersion stability can be influenced by polymer chain configuration as well as by chain conformation.     

Two-electrode DFB laser filter used as a wide tunable narrow-bandFM receiver: tuning analysis, characteristics and experimental FSK-WDMsystem

Characteristics of a two-electrode DFB laser filter are studied both theoretically and experimentally. Using a matrix analysis of spontaneous emission, a continuous tuning range of 6.7 Å is achieved by changing both net field gains of the two electrodes. A total discontinuous tuning range of over 10 nm comprising alternating mode jumps and continuous tuning range of 4 Å are measured experimentally. The laser filter presents a FWHM bandwidth of 5 GHz which depends on the optical input power. In addition, it is demonstrated that a DFB laser filter can act as a frequency discriminator/photodetector, i.e., a narrow-band FM receiver, with a uniform bandwidth of 1.5 GHz. Using the two-electrode DFB laser for both transmitter and receiver, a two-channel FSK-WDM transmission system utilizing the discontinuous tuning range is reported. The advantage of such a device is the simplicity as compared to the heterodyne technique     

Comparison between the effects of positive noncatastrophic HBM ESDstress in n-channel and p-channel power MOSFETs

The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain     

Vortices in anisotropic type-II superconductors

We present a generalized variational model of an isolated vortex, valid in the anisotropic case when the external magnetic field is along one of the symmetry directions. We discuss the effects of the field anisotropy on the core and magnetic pinning of individual vortices.