变频调速在空调系统中的应用

针对人们对生活环境的要求和节能技术的推进,介绍变频空调相对于定频空调节能舒适的优势,通过对变频调速的基本原理、压缩机的定子电压与频率关系的论述,详细分析将变频器引入空调系统的工作原理,结果表明变频空调已进入快速发展期,在我国变频空调将成为空调发展的必然趋势。     

场发射平板显示技术的研究方向

本文介绍显示技术的新发展，场发射显示技术的掘起，场发射技术及真空技术，微显示技术的发展，从崦论述了我国场发射显示技术的研究方向。     

新的非平面Flash Memory结构

提出了一种为在低压下工作的具有较快编程速度的新的非平面的flash memory单元结构,该结构采用简单的叠栅结构并只需增加一步光刻制做出这一新的沟道结构.对于栅长为1.2μm flash单元,获得了在Vg＝15V,Vd＝5V条件下编程时间为42μs,在Vg＝-5V,Vs＝8V条件下的擦除时间为24ms的高性能flash单元,这一新结构的编程速度比普通平面型快闪存储器要快很多.这种新结构flash单元在高速应用场合下具有很好的应用前景.     

基于F型管壳的旋转缝焊技术研究

本文深入研究了旋转缝焊技术,讨论了缝焊中焊边受力、速度变化和热量分布情况,分析了影响旋转缝焊气密性的主要因素.     

Theoretical Study of Millimeter Wave Harmonic Oscillator Stabilized with a Transmission Cavity

An equivalent circuit model of millimeter wave second harmonic oscillator stabilized with a transmission cavity has been proposed for constructing analytical formulations between performance parameters of the oscillator and parameters of the circuit. The model consists of an equivalent circuit of fundamental wave and that of second harmonic wave. Each of the circuits comprises circuit models of main cavity, transmission waveguide, and transmission cavity. Absorbing material placed between the transmission waveguide and the transmission cavity can suppress additional resonances originated from transmission cavity. The behavior of the second harmonic oscillator can be effectively described by the circuit model. Furthermore, based on this model, mechanical tuning characteristics have been studied at first, and then analytical formulas for quality factor and efficiency depending on circuit parameters have been derived. The circuit parameters can be conveniently extracted by electromagnetic field simulation. Hence the formulas exhibit both compact form and enough accuracy. Thereafter, general rules of performance parameters varying with circuit parameters have been deduced for the harmonic oscillators. Then some design considerations have been derived according to the corresponding analysis. The equivalent circuit model is useful for designing and adjusting millimeter wave second harmonic stabilizing oscillator with a transmission cavity.     

激光二极管双侧泵平板Nd:LuVO4晶体热效应

以解析热分析理论为基础,建立了平板Nd:LuVO4晶体在激光二极管阵列双侧泵抽运时的导热微分方程。通过方程求解,得到平板Nd:LuVO4晶体内部温度场分布的解析式及热形变分布。温度场和热形变场的数值模拟表明:当泵浦光平均功率Po=10 W、泵浦区域为1 mm×1 mm时,四组激光二极管阵列光源在三处不同位置的一维温度场、二维温度场分布和热形变量有很大差异;将三处泵浦光源位置所产生的温度分布和热形变量对比,得到了泵浦光源在位置1、2处所产生的温升和热形变量相对较小,位置3处最大。所得结论可为平板Nd:LuVO4激光器的设计及热效应消除提供理论依据。     

FatFs在32位微控制器STM32上的移植

为了实现微控制器在大容量数据存取时的应用,可以采用外扩存贮器并移植文件系统的解决方案。本文介绍了FatFs文件系统在一款基于ARM Cortex M3的微控制器STM32上的移植,并简要描述了从电路的连接到FatFs底层函数的编写。     

Throughput Optimization via Association Control in Wireless LANs

With the rapid development of the mobile computing, accessing the Internet everywhere is important for mobile device users. Wireless LAN is a stable and reliable technique to provide network access for mobile devices. The Wireless LAN Access Points(APs) have been densely deployed so that a user can access the Internet almost everywhere. However, this fact brings some new challenges. Since the regular AP association strategy is signal-based when a user receive the signals of multiple APs. The APs with strong signal will be too overloaded while the bandwidth resource in other APs is wasted. The throughput of the whole WLAN is not optimized. Moreover, the diverse bandwidth demands among users further exacerbate the situation. In this paper, aiming at optimizing the throughput over the whole WLAN, a joint AP association and bandwidth allocation problem is formulated. The different users’ bandwidth demands are added as new constraints. We comprehensively analyze the solution space and prove the problem NP-hard. Our trace-driven evaluations show that the throughput is improved about 23.1 % compared to the conventional schemes.     

Fabrication of a 100%fill-factor silicon microlens array

正A simple method has been developed for the fabrication of a silicon microlens array with a 100%fill factor and a smooth configuration.The microlens array is fabricated by using the processes of photoresist(SU8- 2005) spin coating,thermal reflow,thermal treatment and reactive ion etching(RIE).First,a photoresist microlens array on a single-polished silicon substrate is fabricated by both thermal reflow and thermal treatment technologies. A typical microlens has a square bottom with size of 25μm,and the distance between every two adjacent microlenses is 5μm.Secondly,the photoresist microlens array is transferred to the silicon substrate by RIE to fabricate the silicon microlens array.Experimental results reveal that the silicon microlens array could be formed by adjusting the quantities of the reactive ion gases of SF_6 and O_2 to proper values.In this paper,the quantities of SF_6 and O_2 are 60 sccm and 50 sccm,respectively,the corresponding etch ratio of the photoresist and the silicon substrate is 1 to 1.44.The bottom size and height of a typical silicon microlens are 30.1μm and 3μm,respectively. The focal lengths of the microlenses ranged from 15.4 to 16.6μm.