Symmetry-breaking transitions in equilibrium shapes of coherent precipitates: Effect of elastic anisotropy and inhomogeneity

We examine the symmetry-breaking transitions in equilibrium shapes of coherent precipitates in two-dimensional (2-D) systems under a plane-strain condition with the principal misfit strain components ε* _xx and ε* _yy . For systems with cubic elastic moduli, we first show all the shape transitions associated with different values of t=ε* _yy /ε* _xx . We also characterize each of these transitions, by studying its dependence on elastic anisotropy and inhomogeneity. For systems with dilatational misfit (t=1) and those with pure shear misfit (t=−1), the transition is from an equiaxed shape to an elongated shape, resulting in a break in rotational symmetry. For systems with nondilatational misfit (−1<t<1; t ≠ 0), the transition involves a break in mirror symmetries normal to the x- and y-axes. The transition is continuous in all cases, except when 0<t<1. For systems which allow an invariant line (−1≤t<0), the critical size increases with an increase in the particle stiffness. However, for systems which do not allow an invariant line (0<t≤1), the critical size first decreases, reaches a minimum, and then starts increasing with increasing particle stiffness; moreover, the transition is also forbidden when the particle stiffness is greater than a critical value.     

Continuous phase quadrature phase shift keyed signaling techniquewith coding

A continuous phase quadrature phase shift keyed (CPQPSK) modulation technique is presented. This method utilizes a conventional QPSK modulator and a phase trajectory converter to approximate M=4, h=1/4 continuous phase signal and allows low cost, low complexity, and high rate (>1 Gbit/s) CPM modem implementation for bandwidth efficient transmission through nonlinear satellite channels. Using a communications analysis computer program it has been found that CPQPSK has 99 percent out-of-band power of 0.8R (MSK has 99 percent out-of-band power of 1.2 R where R is defined as bit rate), continuous phase trajectories, and nearly constant envelope amplitude. Simulation of realistic hardware designs indicate that the CPQPSK will require an Eb/No of 14 dB to achieve a bit error rate (BER) of 10^-6. Forward error correcting techniques using block codes with an overhead of 10 percent indicate that the Eb/No requirements can be reduced to 11.2 dB for 10^-6 BER     

Synthesis and characterisation of copolyesters from poly(ethylene terephthalate) and poly(hexamethylene terephthalate)

Copolyesters containing poly(ethylene terephthalate) and poly(hexamethylene terephthalate) (PHT) were prepared by a melt condensation reaction. The copolymers were characterised by infrared spectroscopy and intrinsic viscosity measurements. The density of the copolyesters decreased with increasing percentage of PHT segments in the backbone. Glass transition temperatures (T_g). melting points (T_m) and crystallisation temperatures (T_c) were determined by differential scanning calorimetry. An increase in the percentage of PHT resulted in decrease in T_g, T_m and T_c. The as-prepared copolyesters were crystalline in nature and no exotherm indicative of cold crystallisation was observed. The relative thermal stability of the polymers was evaluated by dynamic thermogravimetry in a nitrogen atmosphere. An increase in percentage of PHT resulted in a decrease in initial decomposition temperature. The rate of crystallisation of the copolymers was studied by small angle light scattering. An increase in percentage of PHT resulted in an increase in the rate of crystallisation.     

Half-bridge inverter using 4H-SiC gate turn-off thyristors

This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm²) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices     

Performance and modeling of advanced Ti:LiNbO3 digitaloptical switches

High-performance Y-branch digital optical switches realized in Ti:LiNbO₃ are presented. Their switching response functions have been optimized in terms of switch voltage and crosstalk ratio. The optimization is based on analyzing different types of waveguide shaping and switching arrangements using coupled mode theory and computer simulations. Excellent switching characteristics are achieved with devices exploiting a specially shaped waveguide branch in a dilated switch arrangement. Demonstrated performances include switching voltage as low as 9 V with crosstalk suppression better than 45 dB and fiber-to-fiber losses as low as 4 dB. Polarization independence with crosstalk suppression better than 40 dB over a 1520- to 1570-nm wavelength range is achieved for any applied switch voltage greater than 18 V. These optimized digital optical switches have further demonstrated the capability to reshape electrical input signals at switching rates of several hundred megahertz     

Terahertz/optical mixing in symmetric semiconductor quantum wells embedded in optical microcavities

A quantum well (QW) in the simultaneous presence of a terahertz field polarized in the growth direction and an incident optical field near an excitonic resonance results in substantial frequency mixing between the terahertz and optical fields. In particular, a response at new frequencies given by the input optical frequency plus or minus multiples of the terahertz frequency occurs-the terahertz sidebands. In a symmetric QW, the dominant contribution to terahertz-sideband formation is the high-frequency modulation of the overlap integral of the relevant conduction- and valence-subband envelope functions that determine the strength of the interband dipole moment. terahertz-sideband generation is shown to be strongly enhanced in a high quality-factor optical microcavity. Numerical values of the reflected intensity into the first terahertz sideband normalized with respect to the reflected intensity at the fundamental as large as /spl sim/10% are estimated. This suggests that terahertz-sideband generation in semiconductor microcavities is a promising option worthy of exploration for wavelength conversion for wavelength-division multiplexing applications.