Emotional intelligence in young and middle adulthood: Cross-sectional analysis of latent structure and means.

Differentiation of the construct of emotional intelligence was investigated in young and middle-aged adults, on the basis of hypotheses generated from differential emotions theory, discrete emotions functionalist theory, and empirical literature on age-related changes in affective complexity and differentiation of abilities. Both age groups were characterized by the same set of comparably related dimensions. However, midlife adults reported significantly greater use of optimism as a mood-regulation strategy than was reported by young adults. This study considers implications of possible structural continuity in emotional intelligence in conjunction with mean increases in the use of optimism as a strategy for managing affect. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing

A theoretical and experimental study of a particular transverse-electric (TE) mode lasing mechanism of a tunneling injection InP quantum-dot (QD) laser is reported. In the experiment, the TE mode lasing action takes place at the first excited state of InP biaxially compressively strained QDs. This QD state is coupled to the ground state of two tensile-strained InGaP quantum wells (QWs) although the tensile-strained QW structure favors the transverse-magnetic (TM) polarization light emission. The measured TE and TM modal gain spectra show a typical QW gain evolution behavior at low injection currents, which can be theoretically modeled by the quasi-equilibrium of carrier distribution. When the injection current is increased near threshold, a TE gain narrowing and a simultaneous TM gain pinning are observed in the measured modal gain spectra, which cannot be explained via the quasi-equilibrium model. We propose a polarization-dependent photon-mediated carrier redistribution in the QD-coupled-QW structure to explain this TE and TM gain evolution behavior. When the injection current is just below threshold, the strong carrier depletion via stimulated emission due to coupling between the InP QD and InGaP QW states plays an important role in carrier redistribution, which depends on the optical transition energy and polarization. This concept of the polarization-dependent photon-mediated carrier redistribution explains the TE gain narrowing and TM gain pinning behavior. In addition, a coupled rate equation model is established, and the calculated polarization power ratio based on the coupled rate equations explains the experimental observation.     

Maternal depression and early positive parenting predict future conduct problems in young children with attention-deficit/hyperactivity disorder.

Children with attention-deficit/hyperactivity disorder (ADHD) are at risk for adverse outcomes such as substance abuse and criminality, particularly if they develop conduct problems. Little is known about early predictors of the developmental course of conduct problems among children with ADHD, however. Parental psychopathology and parenting were assessed in 108 children who first met Diagnostic and Statistical Manual of Mental Disorders (4th ed.) criteria for ADHD at 4-7 years old. When demographic variables and baseline ADHD and conduct problems were controlled, maternal depression predicted conduct problems 2-8 years following the initial assessment, whereas positive parenting during the structured parent- child interaction task predicted fewer future conduct problems. These findings suggest that maternal depression is a risk factor, whereas early positive parenting is a protective factor, for the developmental course of conduct problems among children with ADHD. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Computer aided kinetic modeling with KMT and KME

The complexity of many chemical and refining reaction systems and the thus-derived tedious and time-consuming process of building the associated kinetic models have been major obstacles in the use of fundamental kinetics in the solution of chemical engineering problems. This review summarizes work aimed at removing theses obstacles. Our recent work that has led to the enhancement of the Kinetic Modeler's Toolbox (KMT) and the development of the Kinetic Model Editor (KME) presents an end-to-end solution to the kinetic modeling process, including automated feedstock modeling, reaction network construction, kinetic rate estimation, model programming, process system configurations, model customizations, compilations, model execution and results analysis.     

Consideration of measurement of electrostriction in quartz usingBragg reflection of X-rays

Calculation shows that the linear piezoelectric effect should be readily demonstrated in X-cut quartz by Bragg reflection of X-rays, equipment for which is available in every crystal finishing room. Electrostriction should also be observable and measurable in X-cut, Y-cut and Z-cut quartz, and in other cuts having their major surfaces parallel to X-ray diffracting planes of the crystal. Mechanical compression of the quartz due to the charge on the electrodes must be considered     

Factors in American State Government spending on research and development

This paper investigates factors that lead state governments in the United States to spend on research and development and research and development plant. Data come from a national survey of such spending. Regression analysis is used. Findings include the following: the relative wealth of a state, as measured by its tax capacity, predicts some of such spending; the level of a state's taxation, as measured by its tax effort, predicts some of such spending; and the political party composition of a state predicts some of such spending. By contrast, a state's economic difficulty, as measured by its unemployment rate, has almost no relationship to such spending.     

Steady-state modeling of resistive-gate MOSFETs

The Pao-Sah model for the long-channel MOSFET is generalized to include MOSFETs with resistive-gate electrodes (RG-MOSFETs). The RG-MOdSFETs current-voltage characteristics are studied using this extended Pao-Sah model. The steady-state operation of the RG-MOSFET can be divided into three regimes, separated by the uniform channel condition and the pinch-off condition, respectively. The regions of operation are discussed, and a simple analytical I-V expression is given for the device     

Modular implementation of efficient self-checking checkers for the Berger code

A technique for designing efficient checkers for conventional Berger code is proposed in this paper. The check bits are derived by partitioning the information bits into two blocks, and then using an addition array to sum the number of 1's in each block. The check bit generator circuit uses a specially designed 4-input 1's counter. Two other types of 1's counters having 2 and 3 inputs are also used to realize checkers for variable length information bits. Several variations of 2-bit adder circuits are used to add the number of 1's. The check bit generator circuit uses gates with fan-in of less than or equal to 4 to simplify implementation in CMOS. The technique achieves significant improvement in gate count as well as speed over existing approaches.     

A vertically integrated GaAs bipolar dynamic RAM cell with storagetimes of 4.5 h at room temperature

The storage times of FET-accessed GaAs dynamic RAM cells are limited to less than 1 min at room temperature by gate leakage in the access transistor. These transistor leakage mechanisms have been eliminated by designing a vertically integrated DRAM cell in which an n-p-n bipolar access transistor is merged with a p-n-p storage capacitor. Storage times of 4.5 h are obtained at room temperature, a 1000-fold increase over the best FET-accessed cells     

On the Hertzian fatigue cone crack propagation in ceramics

The Hertzian cone crack initiation and propagation in ceramics under cyclic fatigue loading with a spherical indenter is studied. Unlike the so-called quasi-static Hertzian cone crack, the fatigue Hertzian cone crack propagation eliminates the dynamic effect on unstable crack propagation. As such, the crack is found to propagate following the path of pure mode I type. We use an elasticity approach, a finite element analysis, and an empirical analysis to investigate the Hertzian cone crack in three stages: crack initiation, crack propagation, and crack kinking. The mechanism of the multiple concentric cone cracks is also explained. The purpose is to understand and predict the behavior of the formation of the Hertzian fatigue cone crack using available modeling tools.Zheng Chen is currently with Space Power Institute, Auburn University.