Simulation and Experimental Method for Microwave Oven

The simulation software, HFSS （high frequency structure simulator）, is introduced in microwave oven design. In the cold test, a network analyzer is used to measure the reflection coefficient （S11） of the cavity under empty and loaded states over the frequency range from 2.448 GHz to 2.468 GHz. In the hot test, a piece of wet thermal paper and an infrared thermal imaging camera are used to measure the electric field distributions on the mica and turntable. In the cold test, the simulation agrees well with the experiment no matter in empty state or loaded state. In the hot test, the simulation agrees well with the experiment in general in empty state and approximately in loaded state. The little difference in both cold and hot test may be due to that the model in simulation is not absolutely identical with that in experiment or the inadequate precision of infrared thermal imaging camera.     

Electroluminescence and Laser Emission of Soluble Pure Red Fluorescent Molecular Glasses Based on Dithienylbenzothiadiazole

Soluble molecular red emitters 1a / 1b are synthesized by Stille coupling from 2‐(3,5‐di(1‐naphthyl)phenyl)thiophene precursors. The compounds show emission maxima at ca. 610 nm in CH₂Cl₂ solution and 620 nm in solid films. Replacing the n‐hexyl substituent by 4‐sec‐butoxyphenyl produces a marked increase of glass transition temperature (T_g) from 82 °C to 137 °C and increases the solubility in toluene and p‐xylene, thus improving the film‐forming properties. Cyclic voltammetry shows that the compounds can be reversibly oxidized and reduced around +1.10 and ?1.20 V, respectively. A two‐layered electroluminescent device based on 1b produces a pure red light emission with CIE coordinates (0.646, 0.350) and a maximal luminous efficiency of 2.1 cd A^?1. Furthermore, when used as a solution‐processed red emitter in optically pumped laser devices, compound 1b successfully produces a lasing emission at ca. 650 nm.     

Ultra-Uniform Nanocrystalline Materials via Two-Step Sintering

Nanocrystalline materials with superior properties are of great interest. Much is discussed about obtaining nanograins, but little is known about maintaining grain-size uniformity that is critical for reliability. An especially intriguing question is whether it is possible to achieve a size distribution narrower than what Hillert theoretically predicted for normal grain growth, a possibility suggested—for growth with a higher growth exponent—by the generalized mean-field theory of Lifshitz, Slyozov, Wagner (LSW), and Hillert but never realized in practice. Following a rationally designed two-step sintering route, it has been made possible in bulk materials by taking advantage of the large growth exponent in the intermediate sintering stage to form a uniform microstructure despite residual porosity, and freezing the grain growth thereafter while continuing densification to reach full density. The bulk dense Al₂O₃ ceramic thus obtained has an average grain size of 34 nm and a size distribution much narrower than Hillert's prediction. Bulk Al₂O₃ with a grain-size distribution narrower than the particle-size distribution of starting powders is also demonstrated, as are highly uniform bulk engineering metals (refractory Mo and W-Re alloy) and complex functional ceramics (BaTiO₃-based alloys with superior dielectric strength and energy capacity).     

一种简便快速的二氧化硫测定法

介绍了一种简便快速的二氧化硫的测定方法。即：用酒石酸、氢氧化钠、氯化钠溶液提取样品液中游离、结合的二氧化硫和其它还原性物质。用标准碘溶液滴定出总量还原性物质;经加人甲醛结合二氧化硫后,再用碘液滴定。二者相减,即求出二氧化硫的含量。该法的最低检出量为1．6～10(-6),回收率为86．5％～95．5％,重复性较好,与国标法测定结果比较无显著性差异,且简便、快速、准确。     

A study of the numerical dispersion relation for the 2-D ADI-FDTD method

This letter presents a numerical dispersion relation for the two-dimensional (2-D) finite-difference time-domain method based on the alternating-direction implicit time-marching scheme (2-D ADI-FDTD). The proposed analytical relation for 2-D ADI-FDTD is compared with those relations in the previous works. Through numerical tests, the dispersion equation of this work was shown as correct one for 2-D ADI-FDTD.     

A shifted gamma distribution model for long-range dependent Internet traffic

It is important to characterize the distributional property and the correlation structure of traffic arrival processes in modeling internet traffic. The conventional fractional Gaussian noise (fGn) model fails in characterizing the distributional property when the distribution of the input traffic rates is nongaussian. We propose a shifted gamma distribution model which can solve this problem. A linear-time generation algorithm is also given.     

薄膜和量子点的外延生长(英文)

首先简短地综述了人们关于外延薄膜材料层状(layer-by-layer)生长机制的认识;给出了作者关于自组装量子点外延生长过程的评价和观点,强调了量子点自组装生长过程的复杂性和非线性性质。在对已经发表过的实验数据进一步分析的基础上,作者对一个量子点自组装生长形成所需要的时间作了一个估算,说明这是一个非常快的过程(<10-4s)。最后,作者提出了一个理解量子点自组装生长过程机制的模型。     

硅化物阻挡层对高压漏扩展MOS晶体管的影响

Silicide-block-film effects on drain-extended MOS （DEMOS） transistors were comparatively investigated, by means of different film stack stoichiometric SiO2 and silicon-rich oxide （SRO）. The electrical properties of the as-deposited films were evaluated by extracting source/drain series resistance. It was found that the block film plays a role like a field plate, which has significant influence on the electric field beneath. Similar to hot-carrier- injection （HCI） induced degradation for devices, the block film initially charged in fabrication process also strongly affects the device characteristics and limits the safe operating area.