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971.
Conclusions -- A gas-phase method of depositing one- or multiple-component carbide coatings on CFM of various textile structures has been developed. With preservation of the strength and elastic characteristics of the CFM, the thermo-oxidative resistance of the material is increased, plus the temperature range for the decomposition is shifted into the higher temperature region — by 150–250°C as compared with the starting material.-- CFM with protective coatings are finding ever greater use in making filters for cleaning up high-temperature gas-air mixtures.VNIIPV. Translated from Khimicheskie Volokna, No. 3, pp. 47–48, May–June, 1991. 相似文献
972.
Averin S.V. Kohl A. Muller R. Mesquida Kusters A. Wisser J. Heime K. 《Electronics letters》1992,28(11):992-995
The p/sup +/-cap layer was used to fabricate a metal-semiconductor-metal (MSM) interdigitated photodetector on Ga/sub 0.47/In/sub 0.53/As. The measured barrier height was Phi /sub Bn=/0.52 V, the ideality factor n=1.1 and average dark current density 2 mA/cm/sup 2/. A rise time of 45 ps at lambda =1.3 mu m under 2 V bias was measured for an MSM photodiode with 3 mu m finger width and finger gaps and an active area of 100*100 mu m/sup 2/.<> 相似文献
973.
The parasitic bipolar transistor inherent in the power vertical Double Diffused MOSFET (DMOSFET) structure can have a significant impact on its performance and reliability. Selectively formed TiSi2 films on source contacts were used to reduce the contact resistance to n + source diffusion. These devices exhibit “kinks” in the output I-V characteristics. High contact resistance of TiSi2 to moderately doped p-body diffusion causes high output conductance. Detailed two-dimensional numerical simulations are used to investigate the effect of the parasitic bipolar transistor on the static characteristics of scaled silicided DMOSFET's. The high contact resistance of TiSi2-p-body interface leads to a floating potential and causes significant reduction in the MOS gate threshold voltage and results in a premature bipolar turn-on. It is shown that the parasitic bipolar turn-on places an important constraint on the scalability of the device into the submicron regime. A novel self-aligned DMOSFET structure with a shallow diffused p+ region is shown to eliminate this effect. Numerical simulations are shown to be in excellent agreement with the measured data at various temperatures 相似文献
974.
Bykov Yu. A. Karpukhin S. D. Panfilov Yu. V. Boichenko M. K. Cheptsov V. O. Osipov A. V. 《Metal Science and Heat Treatment》2003,45(9-10):396-399
A method for evaluating the hardness of coatings with nanosize thickness is suggested. The method includes the determination of the hardness of the “coating-substrate” composition by indenting the coating and subsequent computation of the hardness with the use of the additivity rule. This requires determination of the thickness of the coating, of the hardness of the substrate, and of the indentation depth. 相似文献
975.
976.
977.
978.
A computationally efficient and accurate frequency estimation and tracking algorithm is proposed, based on the adaptive frequency estimator (AFE) of Etter and Hush. A Lagrange interpolator (a fractional delay filter) is used to estimate the gradient of the performance surface of the adaptation, which enables highly accurate estimation. The performance of the new algorithm is demonstrated in the context of tracking a chirp signal in noise 相似文献
979.
980.
In Saccharomyces cerevisiae, alpha-factor is internalized by receptor-mediated endocytosis and transported via vesicular intermediates to the vacuole where the pheromone is degraded. Using beta-tubulin and actin mutant strains, we showed that actin plays a direct role in receptor-mediated internalization of alpha-factor, but is not necessary for transport from the endocytic intermediates to the vacuole. beta-tubulin mutant strains showed no defect in these processes. In addition, cells lacking the actin-binding protein, Sac6p, which is the yeast fimbrin homologue, are defective for internalization of alpha-factor suggesting that actin filament bundling might be required for this step. The actin dependence of endocytosis shows some interesting similarities to endocytosis from the apical membrane in polarized mammalian cells. 相似文献