Hydrogen absorption by Pd-coated ZrNi prepared by using Barrel-Sputtering System

To improve the durability of hydrogen storage materials against surface poisoning by impurity gases, effectiveness of Pd-coating layer prepared by using a Barrel-Sputtering System was examined for ZrNi powder. The effectiveness of Pd-coating was evaluated by activation temperature, at which Pd/ZrNi poisoned by air could be activated to absorb hydrogen. Characterization of Pd-coated ZrNi (denoted as Pd/ZrNi) by scanning electron microscopy, electron probe microanalysis and X-ray diffraction showed that a uniform Pd-coating layer was formed with the barrel-sputtering system. It was found that the poisoned Pd/ZrNi sample could be activated even at 423 K to absorb hydrogen at room temperature. This exhibits remarkable contrast to bare ZrNi, which could be only activated appreciably above 1073 K. It is concluded that the Pd-coating by barrel sputtering is quite effective to avoid the effect of surface poisoning of powdery hydrogen storage materials. However, the activation at excessively high temperature resulted in the loss of high activity to absorb hydrogen. It was concluded that this phenomenon was associated with reactions between Pd and ZrNi to form PdZr and other byproducts.     

Fibrous carbon materials having a protective oxidation resistant coating

Conclusions -- A gas-phase method of depositing one- or multiple-component carbide coatings on CFM of various textile structures has been developed. With preservation of the strength and elastic characteristics of the CFM, the thermo-oxidative resistance of the material is increased, plus the temperature range for the decomposition is shifted into the higher temperature region — by 150–250°C as compared with the starting material.-- CFM with protective coatings are finding ever greater use in making filters for cleaning up high-temperature gas-air mixtures.VNIIPV. Translated from Khimicheskie Volokna, No. 3, pp. 47–48, May–June, 1991.     

Low dark current quasi-Schottky barrier MSM-photodiode structures on n-Ga/sub 0.47/In/sub 0.53/As with p/sup +/-Ga/sub 0.47/In/sub 0.53/As cap layer

The p/sup +/-cap layer was used to fabricate a metal-semiconductor-metal (MSM) interdigitated photodetector on Ga/sub 0.47/In/sub 0.53/As. The measured barrier height was Phi /sub Bn=/0.52 V, the ideality factor n=1.1 and average dark current density 2 mA/cm/sup 2/. A rise time of 45 ps at lambda =1.3 mu m under 2 V bias was measured for an MSM photodiode with 3 mu m finger width and finger gaps and an active area of 100*100 mu m/sup 2/.<>     

Effect of bipolar turn-on on the static current-voltagecharacteristics of scaled vertical power DMOSFET's

The parasitic bipolar transistor inherent in the power vertical Double Diffused MOSFET (DMOSFET) structure can have a significant impact on its performance and reliability. Selectively formed TiSi₂ films on source contacts were used to reduce the contact resistance to n ⁺ source diffusion. These devices exhibit “kinks” in the output I-V characteristics. High contact resistance of TiSi₂ to moderately doped p-body diffusion causes high output conductance. Detailed two-dimensional numerical simulations are used to investigate the effect of the parasitic bipolar transistor on the static characteristics of scaled silicided DMOSFET's. The high contact resistance of TiSi₂-p-body interface leads to a floating potential and causes significant reduction in the MOS gate threshold voltage and results in a premature bipolar turn-on. It is shown that the parasitic bipolar turn-on places an important constraint on the scalability of the device into the submicron regime. A novel self-aligned DMOSFET structure with a shallow diffused p⁺ region is shown to eliminate this effect. Numerical simulations are shown to be in excellent agreement with the measured data at various temperatures     

Measurement of the Hardness of Thin Films

A method for evaluating the hardness of coatings with nanosize thickness is suggested. The method includes the determination of the hardness of the “coating-substrate” composition by indenting the coating and subsequent computation of the hardness with the use of the additivity rule. This requires determination of the thickness of the coating, of the hardness of the substrate, and of the indentation depth.     

Fast frequency estimation and tracking using Lagrange interpolation

A computationally efficient and accurate frequency estimation and tracking algorithm is proposed, based on the adaptive frequency estimator (AFE) of Etter and Hush. A Lagrange interpolator (a fractional delay filter) is used to estimate the gradient of the performance surface of the adaptation, which enables highly accurate estimation. The performance of the new algorithm is demonstrated in the context of tracking a chirp signal in noise