Modified Imidazoles: Degradation Inhibitors and Adhesion Promoters for Polyimide Films on Copper Substrates

Polyimide films on copper substrates that are exposed to elevated temperatures and an oxidizing environment will be subject to degradation. In order to halt this degradation without changing the properties of the system, a polymeric agent could be placed between the polyimide and the copper. This paper will investigate three such materials that will not only slow down the degradation of the polyimide and the oxidation of the copper, but will also improve adhesion within the system. Fourier transform infrared reflection-absorption spectroscopy (FTIR-RAS) will be used to investigate the polyimide/polymeric agent/copper system.     

Fatty diet and multiple sclerosis]

INTRODUCTION AND DEVELOPMENT: Multiple sclerosis (ME) is an inflammatory disease of the myelin of the central nervous system, the origin of which is still unknown. Genetic, infectious, immunological and environmental factors have all been blamed, but none of these factors on their own can explain the whole spectrum of this disease. Of the environmental factors, fat in the diet has given rise to most discussion. At the present time, it is known that polyunsaturated essential fatty acids form a part of biological membranes. A relationship has been found between the dietary fat consumed and the plasma levels and cell membrane content. CONCLUSIONS: The possible immuno-modulation function of these fatty acids justify rigorous evaluation of this hypothesis.     

Quasi-bound states determination using a perturbed wavenumbersmethod in a large quantum box

A perturbed wavenumbers method (PWM) is presented that is capable of determining the quasi-bound-state eigenenergies and their lifetimes for quantum heterostructures having arbitrary potential profiles. The numerical method presented solves the single-band effective-mass Schrodinger equation without using complex energies. It is applicable to quantum structures that are symmetric, asymmetric, unbiased, or biased. For multiple quantum heterostructures, extensive comparisons of this numerical method with other currently used techniques are included. In addition, a modified density of states formulation is presented and applied to these example cases     

A novel on-chip electrostatic discharge (ESD) protection withcommon discharge line for high-speed CMOS LSIs

A novel on-chip electrostatic discharge (ESD) protection for high-speed CMOS LSI's that operate at higher than 500 MHz has been developed. Introduction of a newly developed common discharge line (CDL) can completely eliminate the protection device influence on the inner circuit operation. This enables minimization of the I/O capacitance by shrinking the dimension of the output transistor, which also serves as a protection device in conventional devices. This new protection (CDL protection) was applied to a high-speed DRAM of which I/O pin capacitance specification is 2 pF. As a result, the ESD tolerance of 4 kV for the charged device model test, 4 kV for the human body model test, and 700 V for the machine model test were obtained. In addition, the DRAM data rate higher than 660 MHz at room temperature was achieved. The results show significant improvement for both ESD and the I/O capacitance, compared with the conventional structure