Low dark current quasi-Schottky barrier MSM-photodiode structures on n-Ga/sub 0.47/In/sub 0.53/As with p/sup +/-Ga/sub 0.47/In/sub 0.53/As cap layer

The p/sup +/-cap layer was used to fabricate a metal-semiconductor-metal (MSM) interdigitated photodetector on Ga/sub 0.47/In/sub 0.53/As. The measured barrier height was Phi /sub Bn=/0.52 V, the ideality factor n=1.1 and average dark current density 2 mA/cm/sup 2/. A rise time of 45 ps at lambda =1.3 mu m under 2 V bias was measured for an MSM photodiode with 3 mu m finger width and finger gaps and an active area of 100*100 mu m/sup 2/.<>     

Effect of bipolar turn-on on the static current-voltagecharacteristics of scaled vertical power DMOSFET's

The parasitic bipolar transistor inherent in the power vertical Double Diffused MOSFET (DMOSFET) structure can have a significant impact on its performance and reliability. Selectively formed TiSi₂ films on source contacts were used to reduce the contact resistance to n ⁺ source diffusion. These devices exhibit “kinks” in the output I-V characteristics. High contact resistance of TiSi₂ to moderately doped p-body diffusion causes high output conductance. Detailed two-dimensional numerical simulations are used to investigate the effect of the parasitic bipolar transistor on the static characteristics of scaled silicided DMOSFET's. The high contact resistance of TiSi₂-p-body interface leads to a floating potential and causes significant reduction in the MOS gate threshold voltage and results in a premature bipolar turn-on. It is shown that the parasitic bipolar turn-on places an important constraint on the scalability of the device into the submicron regime. A novel self-aligned DMOSFET structure with a shallow diffused p⁺ region is shown to eliminate this effect. Numerical simulations are shown to be in excellent agreement with the measured data at various temperatures     

Measurement of the Hardness of Thin Films

A method for evaluating the hardness of coatings with nanosize thickness is suggested. The method includes the determination of the hardness of the “coating-substrate” composition by indenting the coating and subsequent computation of the hardness with the use of the additivity rule. This requires determination of the thickness of the coating, of the hardness of the substrate, and of the indentation depth.     

Fast frequency estimation and tracking using Lagrange interpolation

A computationally efficient and accurate frequency estimation and tracking algorithm is proposed, based on the adaptive frequency estimator (AFE) of Etter and Hush. A Lagrange interpolator (a fractional delay filter) is used to estimate the gradient of the performance surface of the adaptation, which enables highly accurate estimation. The performance of the new algorithm is demonstrated in the context of tracking a chirp signal in noise     

Actin and fimbrin are required for the internalization step of endocytosis in yeast

In Saccharomyces cerevisiae, alpha-factor is internalized by receptor-mediated endocytosis and transported via vesicular intermediates to the vacuole where the pheromone is degraded. Using beta-tubulin and actin mutant strains, we showed that actin plays a direct role in receptor-mediated internalization of alpha-factor, but is not necessary for transport from the endocytic intermediates to the vacuole. beta-tubulin mutant strains showed no defect in these processes. In addition, cells lacking the actin-binding protein, Sac6p, which is the yeast fimbrin homologue, are defective for internalization of alpha-factor suggesting that actin filament bundling might be required for this step. The actin dependence of endocytosis shows some interesting similarities to endocytosis from the apical membrane in polarized mammalian cells.