Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

8096/8098单片机集成开发系统

本集成开发环境集编辑、编译、调试和运行于一体,模拟了MCS-96系列单片机的指令系统,并给教学、实验、应用、科研和单片机的开发提供了强有力的手段。     

Magnetic anisotropy of Co-Cr thin films as a function of substrate temperature during deposition

A sequence of Co78Cr22films, 500 nm in thickness, was prepared by deposition on glass in a modified Varian D.C. magnetron S-gun sputtering system. The substrate temperature during deposition, Ts, was fixed at various values with an upper limit of 300°C. Specimens were examined by VSM, TM, FMR and TEM. Msrises significantly with increasing Ts, peaking at 200°C at 370 emu/cm³. The effective volume-averaged anisotropy drops for Ts>110°C from +1.6 KOe to progressively negative values (-4.3 KOe at 300°C). From FMR we find indications of the presence, in addition to the transition and bulk layers, of a highly negative anisotropy constituent (sim-11.5KOe anisotropy field). This resonance appears at Tsvalues of 150°C and above. TEM plane and cross-section views taken on a Ts= 150°C specimen show islands composed of tilted columns within the bulk. For vertical recording, specimens prepared at Tsvalues between 50 and 100°C are recommended. On the other hand, for longitudinal recording applications, films prepared at Tsvalues above 250°C would seem to be appropriate.     

The organisational learning effects of management accounting information under advanced manufacturing technology

This study empirically examined the organisational learning effects of the nonfinancial performance information provided by management accounting information systems (MAISs) under advanced manufacturing technology (AMT). In this study, a target costing system and the frequent and quick reporting of information were considered the facilitators of learning. First, we examined the relationships between AMT level and the amount of nonfinancial performance information produced by MAISs. The empirical results showed that there are significant positive relationships between the level of AMT and nonfinancial performance information. With a systems approach, we also proved the impact of the relationships among AMT levels, nonfinancial performance information and learning facilitators on the organisational performance of a firm. The results of our research suggest that under a high level of AMT, for the provision of information to result in an increase of performance through organisational learning, a target costing system must be introduced and a large amount of information should be provided frequently and quickly. The results of this study also showed that although AMT level may be low, fairly well-arranged facilitators and a moderately large amount of information may be necessary for the improvement of performance. In conclusion, effective organisational learning depends on the provision of relevant information as well as efficient learning support mechanisms.     

High-voltage bridge for measuring spontaneous polarization,dielectric constants,and conductivity of ferroelectric crystals

Translated from Izmeritel'naya Tekhnika, No. 9, pp. 34–35, September, 1989.