Effects of smoking cessation on insulin and cardiovascular risk factors--a controlled study of 4 months'' duration

MIB-1 Ki-67 and PCNA scores in infiltrating ductal NOS breast carcinomas were compared. The correlation between MIB-1, Ki-67 and PCNA indices and several clinicopathological factors that have prognostic significance in breast cancer was also assessed. The mean Ki-67, MIB-1 and PCNA indices were 13.4%, 19.4%, 27.6%, respectively. Significant positive linear correlation was found only between Ki-67 and MIB-1 indices. PCNA score did not correlate with Ki-67 and MIB-1 indices. The significant correlation between Ki-67 and MIB-1 scores and histological grade was found. There was no correlation between Ki-67 and MIB-1 indices and axillary lymph node status or tumor diameter. The results suggest that MIB-1 antibody is an excellent tool for assessment of proliferative rate of breast cancer cells in paraffin sections.     

绿色电镀技术系统示范项目

根据生产实践和现场数据,详细介绍了安美特公司配合中国环境保护产业协会和中国表面工程协会共同启动的绿色电镀技术示范项目的实施状况。该示范项目的核心内容是包括前处理、锌合金电镀及后处理在内的防腐蚀镀层组合实用技术。经被试点电镀企业投放于大生产实践的长期使用,该示范项目取得了上佳的环境和经济效益:单位水耗降低了85%,单位能耗降低了65%;电镀废水中COD减少了50%,电镀速率提高了50%,产品一次合格率从90%提高到98%;钝化液中锌杂质削减了65%～95%,铁杂质削减了85%～95%,而且彻底杜绝了锌镍合金电镀过程中氰化物的产生。     

熔炼低品位电子废料中铜的湿法冶金选择性回收

比较从低品位电工电子废料中选择性回收铜的3种湿法冶金方法。首先将废料熔炼成Cu?Zn?Sn?Ag合金,并采用SEM?EDS和XRD进行表征。对合金进行阳极溶解,首先采用氨溶液和硫酸溶液对合金进行电沉积或在氨?硫酸铵溶液中浸出,然后进行电沉积铜。实现了各种金属分离,Pb、Ag 和Sn等沉积在阳极泥中,而铜则转移至电解液中并在阴极上还原析出。最佳的处理条件为在硫酸溶液中浸出,获得的最终产品为高纯Cu(99%),电流效率为90%。采用氨浸出可使Cu离子富集在电解液中,利于后续的电沉积,但是自发溶解的速率较低。在氨?硫酸铵溶液中进行阳极溶解不利于各种金属在阳极泥、电解液和阴极沉积物进行分离。     

The sequence of a subtilisin-type protease (aerolysin) from the hyperthermophilic archaeum Pyrobaculum aerophilum reveals sites important to thermostability

The hyperthermophilic archaeum Pyrobaculum aerophilum grows optimally at 100 degrees C and pH 7.0. Cell homogenates exhibit strong proteolytic activity within a temperature range of 80-130 degrees C. During an analysis of cDNA and genomic sequence tags, a genomic clone was recovered showing strong sequence homology to alkaline subtilisins of Bacillus sp. The total DNA sequence of the gene encoding the protease (named "aerolysin") was determined. Multiple sequence alignment with 15 different serine-type proteases showed greatest homology with subtilisins from gram-positive bacteria rather than archaeal or eukaryal serine proteases. Models of secondary and tertiary structure based on sequence alignments and the tertiary structures of subtilisin Carlsberg, BPN', thermitase, and protease K were generated for P. aerophilum subtilisin. This allowed identification of sites potentially contributing to the thermostability of the protein. One common transition put alanines at the beginning and end of surface alpha-helices. Aspartic acids were found at the N-terminus of several surface helices, possibly increasing stability by interacting with the helix dipole. Several of the substitutions in regions expected to form surface loops were adjacent to each other in the tertiary structure model.     

尼龙(PA)电镀前处理

介绍了适用于尼龙(PA)基材的新型前处理工艺.经过膨胀、调校、钯活化、还原、化学镍(δ=0.3 μm)、预镀镍或铜(δ=2～5 μm),酸铜(δ=20 μm),光亮镍(δ=12 μm)、装饰铬(δ=0.3μm)等工艺后,可在尼龙表面获得结合力良好的装饰性镀层.该工艺为开发尼龙塑料在电镀业的应用迈出了重要的一步.     

Textural and Structural Properties of Mesoporous Silica Synthesized Under Refluxing Conditions

Mesoporous silica with pore sizes of 3–6 nm has been synthesized under refluxing and autogenous pressure conditions of hydrothermal synthesis from precursor gels having different alkaline pH. The mesoporous silica prepared is characterized by powder X-ray diffraction, nitrogen adsorption-desorption measurement and scanning electron microscopy. Thermal stability has been tested by XRD analysis of mesoporous silica after thermal treatment at 823 K, 6 h; 1023 K, 1 h and 1223 K, 1 h. The results indicate that the mesoporous silica prepared under refluxing condition from precursor gel of pH 11 has large surface area (ca.1103 m² g^{− 1}) and pore volume (ca. 0.868 cm³ g^{− 1}) and is thermally stable at 1223 K. The surface area, pore volumes and pore wall thickness increase as the pH of the precursor gel is increased for refluxing condition of synthesis. The comparison of textural properties revealed that the refluxing condition is advantageous over autogenous pressure condition for obtaining mesoporous silica with higher surface area (852 m² g^{− 1}), pore volume (0.894 cm³ g^{− 1}) and pore diameter > 4 nm with wall thickness of 1.59 nm, when synthesized from precursor gel of pH 9.2. The ²⁹Si NMR spectra showed that a great part of the Si atoms exists as silanol groups. The mesoporous silica made at the lower pH (9.2) under refluxing conditions have more condensed framework. In calcined mesoporous silica, the proportion of partly condensed silica (Q³) is higher than fully condensed silica (Q⁴).     

Computer Techniques to Analyze Shell-and-Tube Heat Exchangers

This paper outlines computer analyses to predict thermal-hydraulics, flow-induced vibration, and fretting-wear damage in shell-and-tube heat exchangers. The analytical techniques are briefly described and the results arc illustrated by example. It is concluded that computer techniques can do much to improve the reliability and performance of heat exchangers.     

Inverse Capacitance-Voltage Characteristics of Bi3.25La0.75Ti3O12 Thin Film Pulsed Laser Deposited on Thermally Oxidized n-Type Si Substrates

Comparative studies on the electrical properties of a metal-ferroelectric-insulator-semiconductor field effect transistor were conducted using pulsed laser ablated ferroelectric Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films deposited on SiO₂/Si substrates with different SiO₂ thicknesses. The SiO₂ layer was prepared on n-type Si substrates by dry oxidation at a temperature of 800°C. Small angle x-ray reflectivity studies were used to measure the SiO₂ thickness. The capacitance-voltage (C-V) measurements revealed that the films showed good interfacial properties. Shifts in flatband voltages were observable, but were effectively reduced by deposition of the ferroelectric films. Au/BLT/SiO₂/Si diodes with 8 nm SiO₂ layer showed to be stable with relatively large memory window values of about 0.3 V, 2.5 V, 5.0 V, and 7.0 V, at increasing bias voltages of ±5 V, ±7 V, ±10 V, and ±12 V, respectively.