Thermodynamic properties of 1-nutyl-3-methylimidazolium chloride (C<Subscript>4</Subscript>mim[Cl]) ionic liquid

Thermodynamic properties of 1-butyl-3-methylimidazolium chloride (C₄mim[Cl]) ionic liquid were determined using thermogravimetric (TG) differential thermal analysis (DTA). A new method called DTA mass-difference baseline, was used to measure the heat capacity and enthalpy change of phase transformation of ionic liquid from DTA curves. Based on this, the changes in standard enthalpy, entropy, and Gibbs energy were determined. The results show that standard enthalpy and entropy changes of C₄mim[Cl] increase nonlinearly with increasing temperature, while the standard Gibbs energy change decreases nonlinearly with increasing temperature within the temperature range studied (298–453 K). The standard enthalpy of melting and enthalpy of vaporization were determined to be 0.93 and 11.07 kJ/mol, respectively.     

Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

In this work, we have investigated the electrical properties of Au/n‐InP contacts with a thin layer of polyvinyl alcohol (PVA) as an interlayer. The current–voltage (I–V) and capacitance–voltage (C–V) measurements are carried out in the temperature range of 175–425 K. The Au/PVA/n‐InP Schottky structure show nonideal behaviors and indicates the presence of a nonuniform distribution of interface states. The temperature dependent interface states densities (N_SS), ideality factor and barrier height are obtained. An abnormal decrease in zero‐bias barrier height (BH) and increase in the ideality factor ( ) with decreasing temperature have been explained on the basis of the thermionic emission theory with Gaussian distribution (GD) of the BHs due to the BH inhomogeneities. The experimental I–V characteristics of Au/PVA/n‐InP Schottky diode has revealed the existence of a double GD with mean BH values of ( ) of 1.246 and 0.899 eV and standard deviation ( ) of 0.176 and 0.137 V, respectively. Consequently, the modified conventional activation energy versus plot gives and Richardson constants ( ) and the values are 1.17 and 0.71 eV and 9.9 and 6.9 A/cm² K², respectively, without using the temperature coefficient of the BH. The effective Richardson constant value of 9.9 A/cm² K² is very close to the theoretical value of 9.4 A/cm² K² for n‐InP. The discrepancy between Schottky barrier heights estimated from I–V and C–V measurements is also discussed. © 2013 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014 , 131, 39773.     

Precursor gas chemistry determines the crystallinity of carbon nanotubes synthesized at low temperature

Despite significant progress in carbon nanotube (CNT) synthesis by thermal chemical vapor deposition (CVD), the factors determining the structure of the resulting carbon filaments and other graphitic nanocarbons are not well understood. Here, we demonstrate that gas chemistry influences the crystal structure of carbon filaments grown at low temperatures (500 °C). Using thermal CVD, we decoupled the thermal treatment of the gaseous precursors (C₂H₄/H₂/Ar) and the substrate-supported catalyst. Varying the preheating temperature of the feedstock gas, we observed a striking transition between amorphous carbon nanofibers (CNFs) and crystalline CNTs. These results were confirmed using both a hot-wall CVD system and a cold-wall CVD reactor. Analysis of the exhaust gases (by ex situ gas chromatography) showed increasing concentrations of specific volatile organic compounds (VOCs) and polycyclic aromatic hydrocarbons (PAHs) that correlated with the structural transition observed (characterized using high-resolution transmission electron microscopy). This suggests that the crystallinity of carbon filaments may be controlled by the presence of specific gas phase precursor molecules (e.g., VOCs and PAHs). Thus, direct delivery of these molecules in the CVD process may enable selective CNF or CNT formation at low substrate temperatures. The inherent scalability of this approach could impact many promising applications, especially in the electronics industry.     

Viscosity of Iron Oxide Aluminosilicate Melts

Metallurgical and Materials Transactions B - A structure-based viscosity model has been developed for the CaO-MgO-FeO-SiO2-Al2O3 system and its subsystems. A critical analysis of the experimental...     

HgCdTe Growth on 6 cm × 6 cm CdZnTe Substrates for Large-Format Dual-Band Infrared Focal-Plane Arrays

This paper describes molecular-beam epitaxy growth of mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) dual-band device structures on large-area (6 cm × 6 cm) CdZnTe substrates. Wafer-level composition and defect mapping techniques were used to investigate the limiting mechanisms in improving the cutoff wavelength (λ _c) uniformity and reducing the defect density. Structural quality of epitaxial layers was monitored using etch pit density (EPD) measurements at various depths in the epitaxial layers. Finally, 640 × 480, 20-μm-pixel-pitch dual-band focal-plane arrays (FPAs) were fabricated to demonstrate the overall maturity of growth and fabrication processes of epitaxial layers. The MWIR/LWIR dual-band layers, at optimized growth conditions, show a λ _c variation of ±0.15 μm across a 6 cm × 6 cm CdZnTe substrate, a uniform low macrodefect density with an average of 1000 cm⁻², and an average EPD of 1.5 × 10⁵ cm⁻². FPAs fabricated using these layers show band 1 (MWIR) noise equivalent temperature difference (NETD) operability of 99.94% and band 2 (LWIR) NETD operability of 99.2%, which are among the highest reported to date.     

Large-Format HgCdTe Dual-Band Long-Wavelength Infrared Focal-Plane Arrays

Raytheon Vision Systems (RVS) continues to further its capability to deliver state-of-the-art high-performance, large-format, HgCdTe focal-plane arrays (FPAs) for dual-band long-wavelength infrared (L/LWIR) detection. Specific improvements have recently been implemented at RVS in molecular-beam epitaxy (MBE) growth and wafer fabrication and are reported in this paper. The aim of the improvements is to establish producible processes for 512 × 512 30-μm-unit-cell L/LWIR FPAs, which has resulted in: the growth of triple-layer heterojunction (TLHJ) HgCdTe back-to-back photodiode detector designs on 6 cm × 6 cm CdZnTe substrates with 300-K Fourier-transform infrared (FTIR) cutoff wavelength uniformity of ±0.1 μm across the entire wafer; demonstration of detector dark-current performance for the longer-wavelength detector band approaching that of single-color liquid-phase epitaxy (LPE) LWIR detectors; and uniform, high-operability, 512 × 512 30-μm-unit-cell FPA performance in both LWIR bands.     

Cost optimal, parallel reliability systems with fixed repair sanction

Optimisation methods under varied criteria for different parameters in stochastic reliability systems are being increasingly developed and have been reported in recent literature. The large interest evinced in this fascinating area is primarily due to its applicational value and operational role in the decision making process. Recently a parallel system has been considered and the optimal number of units discussed, as well as optimal replacement times for the system based on acquisition and replacement costs.In this paper we consider an improved version of the model formulation, by bringing in additionally the maintenance and per unit repair time costs, and develop a procedure to obtain the optimal number of components in the system with the condition that the system is allowed to undergo a prefixed maximum number of repairs, after which the system is to be replaced.The applicational use of the results is illustrated through numerical work, specialising to some known laws governing the system parameters and corresponding to different fixed number of repair sanctions.     

Impact of Tellurium Precipitates in CdZnTe Substrates on MBE HgCdTe Deposition

State-of-the-art (112)B CdZnTe substrates were examined for near-surface tellurium precipitate-related defects. The Te precipitate density was observed to be fairly uniform throughout the bulk of the wafer, including the near-surface region. After a molecular beam epitaxy (MBE) preparation etch, exposed Te precipitates, small pits, and bumps on the (112)B surface of the CdZnTe wafer were observed. From near-infrared and dark field microscopy, the bumps and small pits on the CdZnTe surface are associated with strings of Te precipitates. Raised bumps are Te precipitates near the surface of the (112)B CdZnTe where the MBE preparation etch has not yet exposed the Te precipitate(s). An exposed Te precipitate sticking above the etched CdZnTe surface plane occurs when the MBE preparation etch rapidly undercuts a Te precipitate. Shallow surface pits are formed when the Te precipitate is completely undercut from the surrounding (112)B surface plane. The Te precipitate that was previously located at the center of the pit is liberated by the MBE preparation etch process.     

Design and analysis of low power high-speed 1-bit full adder cells for VLSI applications

This paper presents a low power and high speed two hybrid 1-bit full adder cells employing both pass transistor and transmission gate logics. These designs aim to minimise power dissipation and reduce transistor count while at the same time reducing the propagation delay. The proposed full adder circuits utilise 16 and 14 transistors to achieve a compact circuit design. For 1.2 V supply voltage at 0.18-μm CMOS technology, the power consumption is 4.266 μW was found to be extremely low with lower propagation delay 214.65 ps and power-delay product (PDP) of 0.9156 fJ by the deliberate use of CMOS inverters and strong transmission gates. The results of the simulation illustrate the superiority of the newly designed 1-bit adder circuits against the reported conservative adder structures in terms of power, delay, power delay product (PDP) and a transistor count. The implementation of 8-bit ripple carry adder in view of proposed full adders are finally verified and was observed to be working efficiently with only 1.411 ns delay. The performance of the proposed circuits was examined using Mentor Graphics Schematic Composer at 1.2 V single ended supply voltage and the model parameters of a TSMC 0.18-μm CMOS.     

Cross-Sectional Study of Macrodefects in MBE Dual-Band HgCdTe on CdZnTe

HgCdTe dual-band mid-wave infrared/long-wave infrared focal-plane arrays on CdZnTe are a key component in advanced electrooptic sensor applications. Molecular beam epitaxy (MBE) has been used successfully for growth of dual-band layers on larger CdZnTe substrates. However, the macrodefect density, which is known to reduce the pixel operability and its run-to-run variation, is larger when compared with layers grown on Si substrate. This paper reports the macrodefect density versus size signature of a well-optimized MBE dual-band growth and a cross-sectional study of a macrodefect that represents the most prevalent class using focused ion beam, scanning transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The results show that the macrodefect originates from a void, which in turn is associated with a pit on the CdZnTe substrate.